I
기초 과학
1부 · 수학 기초
Advanced Engineering Mathematics
1부Erwin Kreyszig · 10th ed. · Wiley, 2011 · ISBN 978-0-470-45836-5 원본 대조
Part A — Ordinary Differential Equations (ODEs)1
1First-Order ODEs2
- 1.1Basic Concepts. Modeling2
- 1.2Geometric Meaning of y′ = f(x, y). Direction Fields, Euler’s Method9
- 1.3Separable ODEs. Modeling12
- 1.4Exact ODEs. Integrating Factors20
- 1.5Linear ODEs. Bernoulli Equation. Population Dynamics27
- 1.6Orthogonal Trajectories. Optional36
- 1.7Existence and Uniqueness of Solutions for Initial Value Problems38
2Second-Order Linear ODEs46
- 2.1Homogeneous Linear ODEs of Second Order46
- 2.2Homogeneous Linear ODEs with Constant Coefficients53
- 2.3Differential Operators. Optional60
- 2.4Modeling of Free Oscillations of a Mass–Spring System62
- 2.5Euler–Cauchy Equations71
- 2.6Existence and Uniqueness of Solutions. Wronskian74
- 2.7Nonhomogeneous ODEs79
- 2.8Modeling: Forced Oscillations. Resonance85
- 2.9Modeling: Electric Circuits93
- 2.10Solution by Variation of Parameters99
3Higher Order Linear ODEs105
- 3.1Homogeneous Linear ODEs105
- 3.2Homogeneous Linear ODEs with Constant Coefficients111
- 3.3Nonhomogeneous Linear ODEs116
4Systems of ODEs. Phase Plane. Qualitative Methods124
- 4.0For Reference: Basics of Matrices and Vectors124
- 4.1Systems of ODEs as Models in Engineering Applications130
- 4.2Basic Theory of Systems of ODEs. Wronskian137
- 4.3Constant-Coefficient Systems. Phase Plane Method140
- 4.4Criteria for Critical Points. Stability148
- 4.5Qualitative Methods for Nonlinear Systems152
- 4.6Nonhomogeneous Linear Systems of ODEs160
5Series Solutions of ODEs. Special Functions167
- 5.1Power Series Method167
- 5.2Legendre’s Equation. Legendre Polynomials Pn(x)175
- 5.3Extended Power Series Method: Frobenius Method180
- 5.4Bessel’s Equation. Bessel Functions J# (x)187
- 5.5Bessel Functions of the Y# (x). General Solution196
6Laplace Transforms203
- 6.1Laplace Transform. Linearity. First Shifting Theorem (s-Shifting)204
- 6.2Transforms of Derivatives and Integrals. ODEs211
- 6.3Unit Step Function (Heaviside Function). Second Shifting Theorem (t-Shifting)217
- 6.4Short Impulses. Dirac’s Delta Function. Partial Fractions225
- 6.5Convolution. Integral Equations232
- 6.6Differentiation and Integration of Transforms. ODEs with Variable Coefficients238
- 6.7Systems of ODEs242
- 6.8Laplace Transform: General Formulas248
- 6.9Table of Laplace Transforms249
Part B — Linear Algebra. Vector Calculus255
7Linear Algebra: Matrices, Vectors, Determinants. Linear Systems256
- 7.1Matrices, Vectors: Addition and Scalar Multiplication257
- 7.2Matrix Multiplication263
- 7.3Linear Systems of Equations. Gauss Elimination272
- 7.4Linear Independence. Rank of a Matrix. Vector Space282
- 7.5Solutions of Linear Systems: Existence, Uniqueness288
- 7.6For Reference: Second- and Third-Order Determinants291
- 7.7Determinants. Cramer’s Rule293
- 7.8Inverse of a Matrix. Gauss–Jordan Elimination301
- 7.9Vector Spaces, Inner Product Spaces. Linear Transformations. Optional309
8Linear Algebra: Matrix Eigenvalue Problems322
- 8.1The Matrix Eigenvalue Problem. Determining Eigenvalues and Eigenvectors323
- 8.2Some Applications of Eigenvalue Problems329
- 8.3Symmetric, Skew-Symmetric, and Orthogonal Matrices334
- 8.4Eigenbases. Diagonalization. Quadratic Forms339
- 8.5Complex Matrices and Forms. Optional346
9Vector Differential Calculus. Grad, Div, Curl354
- 9.1Vectors in 2-Space and 3-Space354
- 9.2Inner Product (Dot Product)361
- 9.3Vector Product (Cross Product)368
- 9.4Vector and Scalar Functions and Their Fields. Vector Calculus: Derivatives375
- 9.5Curves. Arc Length. Curvature. Torsion381
- 9.6Calculus Review: Functions of Several Variables. Optional392
- 9.7Gradient of a Scalar Field. Directional Derivative395
- 9.8Divergence of a Vector Field402
- 9.9Curl of a Vector Field406
10Vector Integral Calculus. Integral Theorems413
- 10.1Line Integrals413
- 10.2Path Independence of Line Integrals419
- 10.3Calculus Review: Double Integrals. Optional426
- 10.4Green’s Theorem in the Plane433
- 10.5Surfaces for Surface Integrals439
- 10.6Surface Integrals443
- 10.7Triple Integrals. Divergence Theorem of Gauss452
- 10.8Further Applications of the Divergence Theorem458
- 10.9Stokes’s Theorem463
Part C — Fourier Analysis. Partial Differential Equations (PDEs)473
11Fourier Analysis474
- 11.1Fourier Series474
- 11.2Arbitrary Period. Even and Odd Functions. Half-Range Expansions483
- 11.3Forced Oscillations492
- 11.4Approximation by Trigonometric Polynomials495
- 11.5Sturm–Liouville Problems. Orthogonal Functions498
- 11.6Orthogonal Series. Generalized Fourier Series504
- 11.7Fourier Integral510
- 11.8Fourier Cosine and Sine Transforms518
- 11.9Fourier Transform. Discrete and Fast Fourier Transforms522
- 11.10Tables of Transforms534
12Partial Differential Equations (PDEs)540
- 12.1Basic Concepts of PDEs540
- 12.2Modeling: Vibrating String, Wave Equation543
- 12.3Solution by Separating Variables. Use of Fourier Series545
- 12.4D’Alembert’s Solution of the Wave Equation. Characteristics553
- 12.5Modeling: Heat Flow from a Body in Space. Heat Equation557
- 12.6Heat Equation: Solution by Fourier Series. Steady Two-Dimensional Heat Problems. Dirichlet Problem558
- 12.7Heat Equation: Modeling Very Long Bars. Solution by Fourier Integrals and Transforms568
- 12.8Modeling: Membrane, Two-Dimensional Wave Equation575
- 12.9Rectangular Membrane. Double Fourier Series577
- 12.10Laplacian in Polar Coordinates. Circular Membrane. Fourier–Bessel Series585
- 12.11Laplace’s Equation in Cylindrical and Spherical Coordinates. Potential593
- 12.12Solution of PDEs by Laplace Transforms600
Part D — Complex Analysis607
13Complex Numbers and Functions. Complex Differentiation608
- 13.1Complex Numbers and Their Geometric Representation608
- 13.2Polar Form of Complex Numbers. Powers and Roots613
- 13.3Derivative. Analytic Function619
- 13.4Cauchy–Riemann Equations. Laplace’s Equation625
- 13.5Exponential Function630
- 13.6Trigonometric and Hyperbolic Functions. Euler’s Formula633
- 13.7Logarithm. General Power. Principal Value636
14Complex Integration643
- 14.1Line Integral in the Complex Plane643
- 14.2Cauchy’s Integral Theorem652
- 14.3Cauchy’s Integral Formula660
- 14.4Derivatives of Analytic Functions664
15Power Series, Taylor Series671
- 15.1Sequences, Series, Convergence Tests671
- 15.2Power Series680
- 15.3Functions Given by Power Series685
- 15.4Taylor and Maclaurin Series690
- 15.5Uniform Convergence. Optional698
16Laurent Series. Residue Integration708
- 16.1Laurent Series708
- 16.2Singularities and Zeros. Infinity715
- 16.3Residue Integration Method719
- 16.4Residue Integration of Real Integrals725
17Conformal Mapping736
- 17.1Geometry of Analytic Functions: Conformal Mapping737
- 17.2Linear Fractional Transformations (Möbius Transformations)742
- 17.3Special Linear Fractional Transformations746
- 17.4Conformal Mapping by Other Functions750
- 17.5Riemann Surfaces. Optional754
18Complex Analysis and Potential Theory758
- 18.1Electrostatic Fields759
- 18.2Use of Conformal Mapping. Modeling763
- 18.3Heat Problems767
- 18.4Fluid Flow771
- 18.5Poisson’s Integral Formula for Potentials777
Part E — Numeric Analysis787
19Numerics in General790
- 19.1Introduction790
- 19.2Solution of Equations by Iteration798
- 19.3Interpolation808
- 19.4Spline Interpolation820
- 19.5Numeric Integration and Differentiation827
20Numeric Linear Algebra844
- 20.1Linear Systems: Gauss Elimination844
- 20.2Linear Systems: LU-Factorization, Matrix Inversion852
- 20.3Linear Systems: Solution by Iteration858
- 20.4Linear Systems: Ill-Conditioning, Norms864
- 20.5Least Squares Method872
- 20.6Matrix Eigenvalue Problems: Introduction876
- 20.7Inclusion of Matrix Eigenvalues879
- 20.8Power Method for Eigenvalues885
- 20.9Tridiagonalization and QR-Factorization888
21Numerics for ODEs and PDEs900
- 21.1Methods for First-Order ODEs901
- 21.2Multistep Methods911
- 21.3Methods for Systems and Higher Order ODEs915
- 21.4Methods for Elliptic PDEs922
- 21.5Neumann and Mixed Problems. Irregular Boundary931
- 21.6Methods for Parabolic PDEs936
- 21.7Method for Hyperbolic PDEs942
Part F — Optimization, Graphs949
22Unconstrained Optimization. Linear Programming950
- 22.1Basic Concepts. Unconstrained Optimization: Method of Steepest Descent951
- 22.2Linear Programming954
- 22.3Simplex Method958
- 22.4Simplex Method: Difficulties962
23Graphs. Combinatorial Optimization970
- 23.1Graphs and Digraphs970
- 23.2Shortest Path Problems. Complexity975
- 23.3Bellman’s Principle. Dijkstra’s Algorithm980
- 23.4Shortest Spanning Trees: Greedy Algorithm984
- 23.5Shortest Spanning Trees: Prim’s Algorithm988
- 23.6Flows in Networks991
- 23.7Maximum Flow: Ford–Fulkerson Algorithm998
- 23.8Bipartite Graphs. Assignment Problems1001
Part G — Probability, Statistics1009
24Data Analysis. Probability Theory1011
- 24.1Data Representation. Average. Spread1011
- 24.2Experiments, Outcomes, Events1015
- 24.3Probability1018
- 24.4Permutations and Combinations1024
- 24.5Random Variables. Probability Distributions1029
- 24.6Mean and Variance of a Distribution1035
- 24.7Binomial, Poisson, and Hypergeometric Distributions1039
- 24.8Normal Distribution1045
- 24.9Distributions of Several Random Variables1051
25Mathematical Statistics1063
- 25.1Introduction. Random Sampling1063
- 25.2Point Estimation of Parameters1065
- 25.3Confidence Intervals1068
- 25.4Testing Hypotheses. Decisions1077
- 25.5Quality Control1087
- 25.6Acceptance Sampling1092
- 25.7Goodness of Fit. χ²-Test1096
- 25.8Nonparametric Tests1100
- 25.9Regression. Fitting Straight Lines. Correlation1103
부록 1ReferencesA1
부록 2Answers to Odd-Numbered ProblemsA4
부록 3Auxiliary MaterialA63
- A3.1Formulas for Special FunctionsA63
- A3.2Partial DerivativesA69
- A3.3Sequences and SeriesA72
- A3.4Grad, Div, Curl, ∇² in Curvilinear CoordinatesA74
부록 4Additional ProofsA77
부록 5TablesA97
원본 목차 PDF로 대조 완료 — 7부 25장 + 부록 5종, 175개 절, 쪽수 포함. §12.7 Heat Equation: Modeling Very Long Bars가 푸리에 변환으로 반무한 매질 확산을 풀어 오차함수 프로파일을 준다 — 18.7의 수학적 근거. 부록 3(Auxiliary Material)에 특수함수 공식·곡선좌표계 연산자가, 부록 5(Tables)에 오차함수·정규분포표가 있다.
Mathematical Methods for Physicists: A Comprehensive Guide
1부Arfken · Weber · Harris · 7th ed. · Academic Press, 2013 · ISBN 978-0-12-384654-9 원본 대조
원본 목차 PDF로 대조 완료 — 23장 153개 절, 쪽수 포함. Part 구분 없이 선형 배열이며 모든 장이 Additional Readings로 끝난다. §12.8 Dispersion Relations가 크라머스-크로니히, §17.10 Space Groups가 결정 대칭. 수치해석 장이 없다 — 그쪽은 Kreyszig Ch.19–21.
Mathematical Methods in the Physical Sciences
1부Mary L. Boas · 3rd ed. · Wiley, 2005 · ISBN 978-0-471-19826-0 원본 대조
원본 목차 PDF로 대조 완료 — 15장 189개 절, 쪽수 포함. 절 번호가 장 안에서 1부터 다시 시작하는 방식(Ch.13 §3)이라 인용할 때 장을 반드시 함께 적어야 한다. Kreyszig보다 물리 지향, Arfken보다 평이하다. §8.12 Green Functions, §11.9 The Error Function, §13.3 The Diffusion or Heat Flow Equation, §3.13 A Brief Introduction to Groups가 1부에서 직접 쓰이는 절.
2부 · 전자기학
Introduction to Electrodynamics
2부David J. Griffiths · 4th ed. · Pearson 2013 / Cambridge 2017 · ISBN 978-1-108-42041-9 원본 대조
1Vector Analysis1
- 1.1Vector Algebra1
- 1.1.1Vector Operations1
- 1.1.2Vector Algebra: Component Form4
- 1.1.3Triple Products7
- 1.1.4Position, Displacement, and Separation Vectors8
- 1.1.5How Vectors Transform10
- 1.2Differential Calculus13
- 1.2.1“Ordinary” Derivatives13
- 1.2.2Gradient13
- 1.2.3The Del Operator16
- 1.2.4The Divergence17
- 1.2.5The Curl18
- 1.2.6Product Rules20
- 1.2.7Second Derivatives22
- 1.3Integral Calculus24
- 1.3.1Line, Surface, and Volume Integrals24
- 1.3.2The Fundamental Theorem of Calculus29
- 1.3.3The Fundamental Theorem for Gradients29
- 1.3.4The Fundamental Theorem for Divergences31
- 1.3.5The Fundamental Theorem for Curls34
- 1.3.6Integration by Parts36
- 1.4Curvilinear Coordinates38
- 1.4.1Spherical Coordinates38
- 1.4.2Cylindrical Coordinates43
- 1.5The Dirac Delta Function45
- 1.5.1The Divergence of r̂/r 245
- 1.5.2The One-Dimensional Dirac Delta Function46
- 1.5.3The Three-Dimensional Delta Function50
- 1.6The Theory of Vector Fields52
- 1.6.1The Helmholtz Theorem52
- 1.6.2Potentials53
2Electrostatics59
- 2.1The Electric Field59
- 2.1.1Introduction59
- 2.1.2Coulomb’s Law60
- 2.1.3The Electric Field61
- 2.1.4Continuous Charge Distributions63
- 2.2Divergence and Curl of Electrostatic Fields66
- 2.2.1Field Lines, Flux, and Gauss’s Law66
- 2.2.2The Divergence of E71
- 2.2.3Applications of Gauss’s Law71
- 2.2.4The Curl of E77
- 2.3Electric Potential78
- 2.3.1Introduction to Potential78
- 2.3.2Comments on Potential80
- 2.3.3Poisson’s Equation and Laplace’s Equation83
- 2.3.4The Potential of a Localized Charge Distribution84
- 2.3.5Boundary Conditions88
- 2.4Work and Energy in Electrostatics91
- 2.4.1The Work It Takes to Move a Charge91
- 2.4.2The Energy of a Point Charge Distribution92
- 2.4.3The Energy of a Continuous Charge Distribution94
- 2.4.4Comments on Electrostatic Energy96
- 2.5Conductors97
- 2.5.1Basic Properties97
- 2.5.2Induced Charges99
- 2.5.3Surface Charge and the Force on a Conductor103
- 2.5.4Capacitors105
3Potentials113
- 3.1Laplace’s Equation113
- 3.1.1Introduction113
- 3.1.2Laplace’s Equation in One Dimension114
- 3.1.3Laplace’s Equation in Two Dimensions115
- 3.1.4Laplace’s Equation in Three Dimensions117
- 3.1.5Boundary Conditions and Uniqueness Theorems119
- 3.1.6Conductors and the Second Uniqueness Theorem121
- 3.2The Method of Images124
- 3.2.1The Classic Image Problem124
- 3.2.2Induced Surface Charge125
- 3.2.3Force and Energy126
- 3.2.4Other Image Problems127
- 3.3Separation of Variables130
- 3.3.1Cartesian Coordinates131
- 3.3.2Spherical Coordinates141
- 3.4Multipole Expansion151
- 3.4.1Approximate Potentials at Large Distances151
- 3.4.2The Monopole and Dipole Terms154
- 3.4.3Origin of Coordinates in Multipole Expansions157
- 3.4.4The Electric Field of a Dipole158
4Electric Fields in Matter167
- 4.1Polarization167
- 4.1.1Dielectrics167
- 4.1.2Induced Dipoles167
- 4.1.3Alignment of Polar Molecules170
- 4.1.4Polarization172
- 4.2The Field of a Polarized Object173
- 4.2.1Bound Charges173
- 4.2.2Physical Interpretation of Bound Charges176
- 4.2.3The Field Inside a Dielectric179
- 4.3The Electric Displacement181
- 4.3.1Gauss’s Law in the Presence of Dielectrics181
- 4.3.2A Deceptive Parallel184
- 4.3.3Boundary Conditions185
- 4.4Linear Dielectrics185
- 4.4.1Susceptibility, Permittivity, Dielectric Constant185
- 4.4.2Boundary Value Problems with Linear Dielectrics192
- 4.4.3Energy in Dielectric Systems197
- 4.4.4Forces on Dielectrics202
5Magnetostatics210
- 5.1The Lorentz Force Law210
- 5.1.1Magnetic Fields210
- 5.1.2Magnetic Forces212
- 5.1.3Currents216
- 5.2The Biot-Savart Law223
- 5.2.1Steady Currents223
- 5.2.2The Magnetic Field of a Steady Current224
- 5.3The Divergence and Curl of B229
- 5.3.1Straight-Line Currents229
- 5.3.2The Divergence and Curl of B231
- 5.3.3Ampère’s Law233
- 5.3.4Comparison of Magnetostatics and Electrostatics241
- 5.4Magnetic Vector Potential243
- 5.4.1The Vector Potential243
- 5.4.2Boundary Conditions249
- 5.4.3Multipole Expansion of the Vector Potential252
6Magnetic Fields in Matter266
- 6.1Magnetization266
- 6.1.1Diamagnets, Paramagnets, Ferromagnets266
- 6.1.2Torques and Forces on Magnetic Dipoles266
- 6.1.3Effect of a Magnetic Field on Atomic Orbits271
- 6.1.4Magnetization273
- 6.2The Field of a Magnetized Object274
- 6.2.1Bound Currents274
- 6.2.2Physical Interpretation of Bound Currents277
- 6.2.3The Magnetic Field Inside Matter279
- 6.3The Auxiliary Field H279
- 6.3.1Ampère’s Law in Magnetized Materials279
- 6.3.2A Deceptive Parallel283
- 6.3.3Boundary Conditions284
- 6.4Linear and Nonlinear Media284
- 6.4.1Magnetic Susceptibility and Permeability284
- 6.4.2Ferromagnetism288
7Electrodynamics296
- 7.1Electromotive Force296
- 7.1.1Ohm’s Law296
- 7.1.2Electromotive Force303
- 7.1.3Motional emf305
- 7.2Electromagnetic Induction312
- 7.2.1Faraday’s Law312
- 7.2.2The Induced Electric Field317
- 7.2.3Inductance321
- 7.2.4Energy in Magnetic Fields328
- 7.3Maxwell’s Equations332
- 7.3.1Electrodynamics Before Maxwell332
- 7.3.2How Maxwell Fixed Ampère’s Law334
- 7.3.3Maxwell’s Equations337
- 7.3.4Magnetic Charge338
- 7.3.5Maxwell’s Equations in Matter340
- 7.3.6Boundary Conditions342
8Conservation Laws356
- 8.1Charge and Energy356
- 8.1.1The Continuity Equation356
- 8.1.2Poynting’s Theorem357
- 8.2Momentum360
- 8.2.1Newton’s Third Law in Electrodynamics360
- 8.2.2Maxwell’s Stress Tensor362
- 8.2.3Conservation of Momentum366
- 8.2.4Angular Momentum370
- 8.3Magnetic Forces Do No Work373
9Electromagnetic Waves382
- 9.1Waves in One Dimension382
- 9.1.1The Wave Equation382
- 9.1.2Sinusoidal Waves385
- 9.1.3Boundary Conditions: Reflection and Transmission388
- 9.1.4Polarization391
- 9.2Electromagnetic Waves in Vacuum393
- 9.2.1The Wave Equation for E and B393
- 9.2.2Monochromatic Plane Waves394
- 9.2.3Energy and Momentum in Electromagnetic Waves398
- 9.3Electromagnetic Waves in Matter401
- 9.3.1Propagation in Linear Media401
- 9.3.2Reflection and Transmission at Normal Incidence403
- 9.3.3Reflection and Transmission at Oblique Incidence405
- 9.4Absorption and Dispersion412
- 9.4.1Electromagnetic Waves in Conductors412
- 9.4.2Reflection at a Conducting Surface416
- 9.4.3The Frequency Dependence of Permittivity417
- 9.5Guided Waves425
- 9.5.1Wave Guides425
- 9.5.2TE Waves in a Rectangular Wave Guide428
- 9.5.3The Coaxial Transmission Line431
10Potentials and Fields436
- 10.1The Potential Formulation436
- 10.1.1Scalar and Vector Potentials436
- 10.1.2Gauge Transformations439
- 10.1.3Coulomb Gauge and Lorenz Gauge440
- 10.1.4Lorentz Force Law in Potential Form442
- 10.2Continuous Distributions444
- 10.2.1Retarded Potentials444
- 10.2.2Jefimenko’s Equations449
- 10.3Point Charges451
- 10.3.1Liénard-Wiechert Potentials451
- 10.3.2The Fields of a Moving Point Charge456
11Radiation466
- 11.1Dipole Radiation466
- 11.1.1What is Radiation?466
- 11.1.2Electric Dipole Radiation467
- 11.1.3Magnetic Dipole Radiation473
- 11.1.4Radiation from an Arbitrary Source477
- 11.2Point Charges482
- 11.2.1Power Radiated by a Point Charge482
- 11.2.2Radiation Reaction Reaction492
12Electrodynamics and Relativity502
- 12.1The Special Theory of Relativity502
- 12.1.1Einstein’s Postulates502
- 12.1.2The Geometry of Relativity508
- 12.1.3The Lorentz Transformations519
- 12.1.4The Structure of Spacetime525
- 12.2Relativistic Mechanics532
- 12.2.1Proper Time and Proper Velocity532
- 12.2.2Relativistic Energy and Momentum535
- 12.2.3Relativistic Kinematics537
- 12.2.4Relativistic Dynamics542
- 12.3Relativistic Electrodynamics550
- 12.3.1Magnetism as a Relativistic Phenomenon550
- 12.3.2How the Fields Transform553
- 12.3.3The Field Tensor562
- 12.3.4Electrodynamics in Tensor Notation565
- 12.3.5Relativistic Potentials569
AVector Calculus in Curvilinear Coordinates575
- A.1Introduction575
- A.2Notation575
- A.3Gradient576
- A.4Divergence577
- A.5Curl579
- A.6Laplacian581
BThe Helmholtz Theorem582
CUnits585
원본 목차 PDF로 대조 완료 — 12장 + 부록 3종, 52개 절과 162개 소절, 쪽수 포함. 소절까지 인쇄 목차에 실린 드문 교재다. Ch.3 Potentials(유일성 정리·영상법·변수분리법)가 14.1 문턱하 2차원 푸아송 해석해의 기법이고, §9.4.3 The Frequency Dependence of Permittivity가 타원계측·광학 상수의 근거다.
Elements of Electromagnetics
2부Matthew N. O. Sadiku · 7th ed. · Oxford University Press, 2018 · ISBN 978-0-19-069861-4 원본 대조
Part 1 — Vector Analysis
1Vector Algebra3
- 1.1Introduction3
- 1.2A Preview of the Book4
- 1.3Scalars and Vectors4
- 1.4Unit Vector5
- 1.5Vector Addition and Subtraction6
- 1.6Position and Distance Vectors7
- 1.7Vector Multiplication11
- 1.8Components of a Vector16
2Coordinate Systems and Transformation31
- 2.1Introduction31
- 2.2Cartesian Coordinates (x, y, z)32
- 2.3Circular Cylindrical Coordinates (ρ, ϕ, z)32
- 2.4Spherical Coordinates (r, θ, ϕ)35
- 2.5Constant-Coordinate Surfaces44
3Vector Calculus59
- 3.1Introduction59
- 3.2Differential Length, Area, and Volume59
- 3.3Line, Surface, and Volume Integrals66
- 3.4Del Operator69
- 3.5Gradient of a Scalar71
- 3.6Divergence of a Vector and Divergence Theorem75
- 3.7Curl of a Vector and Stokes’s Theorem82
- 3.8Laplacian of a Scalar90
- 3.9Classification of Vector Fields92
Part 2 — Electrostatics
4Electrostatic Fields111
- 4.1Introduction111
- 4.2Coulomb’s Law and Field Intensity112
- 4.3Electric Fields due to Continuous Charge Distributions119
- 4.4Electric Flux Density130
- 4.5Gauss’s Law—Maxwell’s Equation132
- 4.6Applications of Gauss’s Law134
- 4.7Electric Potential141
- 4.8Relationship between E and V—Maxwell’s Equation147
- 4.9An Electric Dipole and Flux Lines150
- 4.10Energy Density in Electrostatic Fields154
- 4.11Application Note—Electrostatic Discharge159
5Electric Fields in Material Space177
- 5.1Introduction177
- 5.2Properties of Materials177
- 5.3Convection and Conduction Currents178
- 5.4Conductors181
- 5.5Polarization in Dielectrics187
- 5.6Dielectric Constant and Strength190
- 5.7Linear, Isotropic, and Homogeneous Dielectrics191
- 5.8Continuity Equation and Relaxation Time196
- 5.9Boundary Conditions198
- 5.10Application Note—Materials with High Dielectric Constant207
- 5.11Application Note—Graphene208
- 5.12Application Note—Piezoelectrics210
6Electrostatic Boundary-Value Problems225
- 6.1Introduction225
- 6.2Poisson’s and Laplace’s Equations225
- 6.3Uniqueness Theorem227
- 6.4General Procedures for Solving Poisson’s or Laplace’s Equation228
- 6.5Resistance and Capacitance249
- 6.6Method of Images266
- 6.7Application Note—Capacitance of Microstrip Lines272
- 6.8Application Note—RF MEMS275
- 6.9Application Note—Supercapacitors276
Part 3 — Magnetostatics
7Magnetostatic Fields297
- 7.1Introduction297
- 7.2Biot–Savart’s Law298
- 7.3Ampère’s Circuit Law—Maxwell’s Equation309
- 7.4Applications of Ampère’s Law309
- 7.5Magnetic Flux Density—Maxwell’s Equation317
- 7.6Maxwell’s Equations for Static Fields319
- 7.7Magnetic Scalar and Vector Potentials320
- 7.8Derivation of Biot–Savart’s Law and Ampère’s Law326
- 7.9Application Note—Lightning328
- 7.10Application Note—Polywells329
8Magnetic Forces, Materials, and Devices349
- 8.1Introduction349
- 8.2Forces due to Magnetic Fields349
- 8.3Magnetic Torque and Moment361
- 8.4A Magnetic Dipole363
- 8.5Magnetization in Materials368
- 8.6Classification of Materials372
- 8.7Magnetic Boundary Conditions376
- 8.8Inductors and Inductances381
- 8.9Magnetic Energy384
- 8.10Magnetic Circuits392
- 8.11Force on Magnetic Materials394
- 8.12Application Note—Magnetic Levitation399
- 8.13Application Note—SQUIDs401
Part 4 — Waves and Applications
9Maxwell’s Equations421
- 9.1Introduction421
- 9.2Faraday’s Law422
- 9.3Transformer and Motional Electromotive Forces424
- 9.4Displacement Current433
- 9.5Maxwell’s Equations in Final Forms436
- 9.6Time-Varying Potentials439
- 9.7Time-Harmonic Fields441
- 9.8Application Note—Memristor454
- 9.9Application Note—Optical Nanocircuits455
- 9.10Application Note—Wireless Power Transfer and Qi Standard457
10Electromagnetic Wave Propagation473
- 10.1Introduction473
- 10.2Waves in General474
- 10.3Wave Propagation in Lossy Dielectrics480
- 10.4Plane Waves in Lossless Dielectrics487
- 10.5Plane Waves in Free Space487
- 10.6Plane Waves in Good Conductors489
- 10.7Wave Polarization498
- 10.8Power and the Poynting Vector502
- 10.9Reflection of a Plane Wave at Normal Incidence506
- 10.10Reflection of a Plane Wave at Oblique Incidence517
- 10.11Application Note—Microwaves529
- 10.12Application Note—60 GHz Technology534
11Transmission Lines553
- 11.1Introduction553
- 11.2Transmission Line Parameters554
- 11.3Transmission Line Equations557
- 11.4Input Impedance, Standing Wave Ratio, and Power564
- 11.5The Smith Chart572
- 11.6Some Applications of Transmission Lines585
- 11.7Transients on Transmission Lines592
- 11.8Application Note—Microstrip Lines and Characterization of Data Cables604
- 11.9Application Note—Metamaterials612
- 11.10Application Note—Microwave Imaging613
12Waveguides633
- 12.1Introduction633
- 12.2Rectangular Waveguides634
- 12.3Transverse Magnetic Modes638
- 12.4Transverse Electric Modes643
- 12.5Wave Propagation in the Guide654
- 12.6Power Transmission and Attenuation656
- 12.7Waveguide Current and Mode Excitation660
- 12.8Waveguide Resonators666
- 12.9Application Note—Optical Fiber672
- 12.10Application Note—Cloaking and Invisibility678
13Antennas691
- 13.1Introduction691
- 13.2Hertzian Dipole693
- 13.3Half-Wave Dipole Antenna697
- 13.4Quarter-Wave Monopole Antenna701
- 13.5Small-Loop Antenna702
- 13.6Antenna Characteristics707
- 13.7Antenna Arrays715
- 13.8Effective Area and the Friis Equation725
- 13.9The Radar Equation728
- 13.10Application Note—Electromagnetic Interference and Compatibility732
- 13.11Application Note—Textile Antennas and Sensors737
- 13.12Application Note—Fractal Antennas739
- 13.13Application Note—RFID742
14Numerical Methods757
- 14.1Introduction757
- 14.2Field Plotting758
- 14.3The Finite Difference Method766
- 14.4The Moment Method779
- 14.5The Finite Element Method791
- 14.6Application Note—Microstrip Lines810
원본 목차 PDF로 대조 완료 — 4개 Part 14장 138개 절, 쪽수 포함. 벡터해석을 1부에 따로 두고 정전계 → 정자계 → 시변계 순으로 가는 공학 구성이라, 전송선(11장)·도파관(12장)·안테나(13장)가 Griffiths보다 두껍다. 원서가 절 번호 앞에 †를 붙여 한 학기 강의에서 건너뛰어도 되는 절을 표시하는데, 여기서는 그 표식을 빼고 실었다. 각 장 끝 Application Note도 본문 절 번호를 그대로 이어받는다 — §5.11 Graphene, §9.8 Memristor, §11.9 Metamaterials, §12.9 Optical Fiber가 그 예. 수치해석(14장)에 유한차분·모멘트법·유한요소법이 들어 있어 20부 TCAD의 배경으로 쓸 수 있다.
3부 · 일반물리와 광학
Optics
3부Eugene Hecht · 5th ed. · Pearson, 2017 · ISBN 978-1-292-09696-4 (Global Ed.) 원본 대조
1A Brief History9
- 1.1Prolegomenon9
- 1.2In the Beginning9
- 1.3From the Seventeenth Century10
- 1.4The Nineteenth Century12
- 1.5Twentieth-Century Optics15
2Wave Motion18
- 2.1One-Dimensional Waves18
- 2.2Harmonic Waves22
- 2.3Phase and Phase Velocity26
- 2.4The Superposition Principle28
- 2.5The Complex Representation30
- 2.6Phasors and the Addition of Waves31
- 2.7Plane Waves32
- 2.8The Three-Dimensional Differential Wave Equation36
- 2.9Spherical Waves37
- 2.10Cylindrical Waves39
- 2.11Twisted Light39
3Electromagnetic Theory, Photons, and Light45
- 3.1Basic Laws of Electromagnetic Theory46
- 3.2Electromagnetic Waves54
- 3.3Energy and Momentum57
- 3.4Radiation69
- 3.5Light in Bulk Matter76
- 3.6The Electromagnetic-Photon Spectrum83
- 3.7Quantum Field Theory90
4The Propagation of Light96
- 4.1Introduction96
- 4.2Rayleigh Scattering96
- 4.3Reflection104
- 4.4Refraction108
- 4.5Fermat’s Principle117
- 4.6The Electromagnetic Approach121
- 4.7Total Internal Reflection133
- 4.8Optical Properties of Metals139
- 4.9Familiar Aspects of the Interaction of Light and Matter142
- 4.10The Stokes Treatment of Reflection and Refraction147
- 4.11Photons, Waves, and Probability148
5Geometrical Optics159
- 5.1Introductory Remarks159
- 5.2Lenses159
- 5.3Stops183
- 5.4Mirrors188
- 5.5Prisms199
- 5.6Fiberoptics204
- 5.7Optical Systems215
- 5.8Wavefront Shaping239
- 5.9Gravitational Lensing244
6More on Geometrical Optics255
- 6.1Thick Lenses and Lens Systems255
- 6.2Analytical Ray Tracing259
- 6.3Aberrations266
- 6.4GRIN Systems284
- 6.5Concluding Remarks286
7The Superposition of Waves290
- 7.1The Addition of Waves of the Same Frequency291
- 7.2The Addition of Waves of Different Frequency302
- 7.3Anharmonic Periodic Waves308
- 7.4Nonperiodic Waves318
8Polarization338
- 8.1The Nature of Polarized Light338
- 8.2Polarizers346
- 8.3Dichroism347
- 8.4Birefringence351
- 8.5Scattering and Polarization361
- 8.6Polarization by Reflection363
- 8.7Retarders366
- 8.8Circular Polarizers373
- 8.9Polarization of Polychromatic Light374
- 8.10Optical Activity375
- 8.11Induced Optical Effects — Optical Modulators380
- 8.12Liquid Crystals384
- 8.13A Mathematical Description of Polarization387
9Interference398
- 9.1General Considerations398
- 9.2Conditions for Interference402
- 9.3Wavefront-Splitting Interferometers405
- 9.4Amplitude-Splitting Interferometers416
- 9.5Types and Localization of Interference Fringes432
- 9.6Multiple-Beam Interference433
- 9.7Applications of Single and Multilayer Films441
- 9.8Applications of Interferometry446
10Diffraction457
- 10.1Preliminary Considerations457
- 10.2Fraunhofer Diffraction465
- 10.3Fresnel Diffraction505
- 10.4Kirchhoff’s Scalar Diffraction Theory532
- 10.5Boundary Diffraction Waves535
11Fourier Optics542
- 11.1Introduction542
- 11.2Fourier Transforms542
- 11.3Optical Applications552
12Basics of Coherence Theory588
- 12.1Introduction588
- 12.2Fringes and Coherence590
- 12.3Visibility594
- 12.4The Mutual Coherence Function and the Degree of Coherence597
- 12.5Coherence and Stellar Interferometry603
13Modern Optics: Lasers and Other Topics612
- 13.1Lasers and Laserlight612
- 13.2Imagery — The Spatial Distribution of Optical Information638
- 13.3Holography652
- 13.4Nonlinear Optics667
부록 1Electromagnetic Theory677
부록 2The Kirchhoff Diffraction Theory680
원본 목차 PDF로 대조 완료 — 13장 90개 절 + 부록 2종, 쪽수 포함. 인쇄 목차가 x.y까지만이라 소절은 여전히 미확보다. 리소그래피 대응: NA는 5.3·5.7, 레일리 기준과 에어리 원판은 10.2, MTF·PSF는 11.3, 박막 간섭은 9.4·9.6·9.7, 부분 결맞음은 12.2~12.4.
Fundamentals of Physics, Extended
3부Halliday · Resnick · Walker · 12th ed. · Wiley, 2021 · ISBN 978-1-119-77351-1 원본 대조
1Measurement1
- 1.1Measuring Things, Including Lengths1
- 1.2Time5
- 1.3Mass6
2Motion Along a Straight Line13
- 2.1Position, Displacement, and Average Velocity13
- 2.2Instantaneous Velocity and Speed18
- 2.3Acceleration20
- 2.4Constant Acceleration23
- 2.5Free-Fall Acceleration28
- 2.6Graphical Integration in Motion Analysis30
3Vectors44
- 3.1Vectors and Their Components44
- 3.2Unit Vectors, Adding Vectors by Components50
- 3.3Multiplying Vectors52
4Motion in Two and Three Dimensions67
- 4.1Position and Displacement67
- 4.2Average Velocity and Instantaneous Velocity70
- 4.3Average Acceleration and Instantaneous Acceleration73
- 4.4Projectile Motion75
- 4.5Uniform Circular Motion82
- 4.6Relative Motion in One Dimension84
- 4.7Relative Motion in Two Dimensions86
5Force and Motion—I101
- 5.1Newton’s First and Second Laws101
- 5.2Some Particular Forces109
- 5.3Applying Newton’s Laws113
6Force and Motion—II132
- 6.1Friction132
- 6.2The Drag Force and Terminal Speed138
- 6.3Uniform Circular Motion140
7Kinetic Energy and Work156
- 7.1Kinetic Energy156
- 7.2Work and Kinetic Energy158
- 7.3Work Done by the Gravitational Force163
- 7.4Work Done by a Spring Force167
- 7.5Work Done by a General Variable Force170
- 7.6Power174
8Potential Energy and Conservation of Energy186
- 8.1Potential Energy186
- 8.2Conservation of Mechanical Energy193
- 8.3Reading a Potential Energy Curve196
- 8.4Work Done on a System by an External Force201
- 8.5Conservation of Energy205
9Center of Mass and Linear Momentum225
- 9.1Center of Mass225
- 9.2Newton’s Second Law for a System of Particles229
- 9.3Linear Momentum234
- 9.4Collision and Impulse236
- 9.5Conservation of Linear Momentum240
- 9.6Momentum and Kinetic Energy in Collisions243
- 9.7Elastic Collisions in One Dimension247
- 9.8Collisions in Two Dimensions251
- 9.9Systems with Varying Mass: A Rocket252
10Rotation270
- 10.1Rotational Variables270
- 10.2Rotation with Constant Angular Acceleration279
- 10.3Relating the Linear and Angular Variables281
- 10.4Kinetic Energy of Rotation285
- 10.5Calculating the Rotational Inertia286
- 10.6Torque291
- 10.7Newton’s Second Law for Rotation292
- 10.8Work and Rotational Kinetic Energy296
11Rolling, Torque, and Angular Momentum310
- 11.1Rolling as Translation and Rotation Combined310
- 11.2Forces and Kinetic Energy of Rolling313
- 11.3The Yo-Yo316
- 11.4Torque Revisited317
- 11.5Angular Momentum320
- 11.6Newton’s Second Law in Angular Form322
- 11.7Angular Momentum of a Rigid Body325
- 11.8Conservation of Angular Momentum328
- 11.9Precession of a Gyroscope333
12Equilibrium and Elasticity344
- 12.1Equilibrium344
- 12.2Some Examples of Static Equilibrium349
- 12.3Elasticity355
13Gravitation372
- 13.1Newton’s Law of Gravitation372
- 13.2Gravitation and the Principle of Superposition375
- 13.3Gravitation Near Earth’s Surface377
- 13.4Gravitation Inside Earth381
- 13.5Gravitational Potential Energy383
- 13.6Planets and Satellites: Kepler’s Laws387
- 13.7Satellites: Orbits and Energy390
- 13.8Einstein and Gravitation393
14Fluids406
- 14.1Fluids, Density, and Pressure406
- 14.2Fluids at Rest409
- 14.3Measuring Pressure412
- 14.4Pascal’s Principle413
- 14.5Archimedes’ Principle415
- 14.6The Equation of Continuity419
- 14.7Bernoulli’s Equation423
15Oscillations436
- 15.1Simple Harmonic Motion436
- 15.2Energy in Simple Harmonic Motion444
- 15.3An Angular Simple Harmonic Oscillator446
- 15.4Pendulums, Circular Motion448
- 15.5Damped Simple Harmonic Motion453
- 15.6Forced Oscillations and Resonance456
16Waves—I468
- 16.1Transverse Waves468
- 16.2Wave Speed on a Stretched String476
- 16.3Energy and Power of a Wave Traveling Along a String478
- 16.4The Wave Equation480
- 16.5Interference of Waves482
- 16.6Phasors487
- 16.7Standing Waves and Resonance490
17Waves—II505
- 17.1Speed of Sound505
- 17.2Traveling Sound Waves508
- 17.3Interference511
- 17.4Intensity and Sound Level515
- 17.5Sources of Musical Sound518
- 17.6Beats522
- 17.7The Doppler Effect524
- 17.8Supersonic Speeds, Shock Waves529
18Temperature, Heat, and the First Law of Thermodynamics541
- 18.1Temperature541
- 18.2The Celsius and Fahrenheit Scales545
- 18.3Thermal Expansion547
- 18.4Absorption of Heat550
- 18.5The First Law of Thermodynamics556
- 18.6Heat Transfer Mechanisms562
19The Kinetic Theory of Gases578
- 19.1Avogadro’s Number578
- 19.2Ideal Gases579
- 19.3Pressure, Temperature, and RMS Speed583
- 19.4Translational Kinetic Energy586
- 19.5Mean Free Path587
- 19.6The Distribution of Molecular Speeds589
- 19.7The Molar Specific Heats of an Ideal Gas593
- 19.8Degrees of Freedom and Molar Specific Heats597
- 19.9The Adiabatic Expansion of an Ideal Gas600
20Entropy and the Second Law of Thermodynamics613
- 20.1Entropy613
- 20.2Entropy in the Real World: Engines620
- 20.3Refrigerators and Real Engines626
- 20.4A Statistical View of Entropy629
21Coulomb’s Law641
- 21.1Coulomb’s Law641
- 21.2Charge Is Quantized652
- 21.3Charge Is Conserved654
22Electric Fields665
- 22.1The Electric Field665
- 22.2The Electric Field due to a Charged Particle668
- 22.3The Electric Field due to a Dipole670
- 22.4The Electric Field due to a Line of Charge673
- 22.5The Electric Field due to a Charged Disk679
- 22.6A Point Charge in an Electric Field680
- 22.7A Dipole in an Electric Field683
23Gauss’ Law696
- 23.1Electric Flux696
- 23.2Gauss’ Law701
- 23.3A Charged Isolated Conductor705
- 23.4Applying Gauss’ Law: Cylindrical Symmetry708
- 23.5Applying Gauss’ Law: Planar Symmetry710
- 23.6Applying Gauss’ Law: Spherical Symmetry713
24Electric Potential724
- 24.1Electric Potential724
- 24.2Equipotential Surfaces and the Electric Field729
- 24.3Potential due to a Charged Particle733
- 24.4Potential due to an Electric Dipole736
- 24.5Potential due to a Continuous Charge Distribution738
- 24.6Calculating the Field from the Potential741
- 24.7Electric Potential Energy of a System of Charged Particles743
- 24.8Potential of a Charged Isolated Conductor746
25Capacitance759
- 25.1Capacitance759
- 25.2Calculating the Capacitance761
- 25.3Capacitors in Parallel and in Series765
- 25.4Energy Stored in an Electric Field770
- 25.5Capacitor with a Dielectric774
- 25.6Dielectrics and Gauss’ Law778
26Current and Resistance789
- 26.1Electric Current789
- 26.2Current Density792
- 26.3Resistance and Resistivity796
- 26.4Ohm’s Law801
- 26.5Power, Semiconductors, Superconductors805
27Circuits816
- 27.1Single-Loop Circuits816
- 27.2Multiloop Circuits826
- 27.3The Ammeter and the Voltmeter833
- 27.4RC Circuits833
28Magnetic Fields850
- 28.1Magnetic Fields and the Definition of B850
- 28.2Crossed Fields: Discovery of the Electron855
- 28.3Crossed Fields: The Hall Effect857
- 28.4A Circulating Charged Particle861
- 28.5Cyclotrons and Synchrotrons866
- 28.6Magnetic Force on a Current-Carrying Wire869
- 28.7Torque on a Current Loop872
- 28.8The Magnetic Dipole Moment874
29Magnetic Fields Due to Currents886
- 29.1Magnetic Field due to a Current886
- 29.2Force Between Two Parallel Currents892
- 29.3Ampere’s Law894
- 29.4Solenoids and Toroids899
- 29.5A Current-Carrying Coil as a Magnetic Dipole901
30Induction and Inductance915
- 30.1Faraday’s Law and Lenz’s Law915
- 30.2Induction and Energy Transfers923
- 30.3Induced Electric Fields927
- 30.4Inductors and Inductance932
- 30.5Self-Induction934
- 30.6RL Circuits935
- 30.7Energy Stored in a Magnetic Field940
- 30.8Energy Density of a Magnetic Field942
- 30.9Mutual Induction943
31Electromagnetic Oscillations and Alternating Current956
- 31.1LC Oscillations956
- 31.2Damped Oscillations in an RLC Circuit963
- 31.3Forced Oscillations of Three Simple Circuits966
- 31.4The Series RLC Circuit974
- 31.5Power in Alternating-Current Circuits982
- 31.6Transformers985
32Maxwell’s Equations; Magnetism of Matter998
- 32.1Gauss’ Law for Magnetic Fields998
- 32.2Induced Magnetic Fields1000
- 32.3Displacement Current1003
- 32.4Magnets1007
- 32.5Magnetism and Electrons1009
- 32.6Diamagnetism1015
- 32.7Paramagnetism1016
- 32.8Ferromagnetism1019
33Electromagnetic Waves1032
- 33.1Electromagnetic Waves1032
- 33.2Energy Transport and the Poynting Vector1040
- 33.3Radiation Pressure1043
- 33.4Polarization1045
- 33.5Reflection and Refraction1050
- 33.6Total Internal Reflection1056
- 33.7Polarization by Reflection1059
34Images1072
- 34.1Images and Plane Mirrors1072
- 34.2Spherical Mirrors1076
- 34.3Spherical Refracting Surfaces1083
- 34.4Thin Lenses1086
- 34.5Optical Instruments1094
- 34.6Three Proofs1098
35Interference1111
- 35.1Light as a Wave1111
- 35.2Young’s Interference Experiment1117
- 35.3Interference and Double-Slit Intensity1122
- 35.4Interference from Thin Films1126
- 35.5Michelson’s Interferometer1135
36Diffraction1148
- 36.1Single-Slit Diffraction1148
- 36.2Intensity in Single-Slit Diffraction1153
- 36.3Diffraction by a Circular Aperture1158
- 36.4Diffraction by a Double Slit1162
- 36.5Diffraction Gratings1166
- 36.6Gratings: Dispersion and Resolving Power1170
- 36.7X-Ray Diffraction1173
37Relativity1186
- 37.1Simultaneity and Time Dilation1186
- 37.2The Relativity of Length1196
- 37.3The Lorentz Transformation1199
- 37.4The Relativity of Velocities1204
- 37.5Doppler Effect for Light1205
- 37.6Momentum and Energy1209
38Photons and Matter Waves1225
- 38.1The Photon, the Quantum of Light1225
- 38.2The Photoelectric Effect1227
- 38.3Photons, Momentum, Compton Scattering, Light Interference1230
- 38.4The Birth of Quantum Physics1236
- 38.5Electrons and Matter Waves1238
- 38.6Schrödinger’s Equation1242
- 38.7Heisenberg’s Uncertainty Principle1244
- 38.8Reflection from a Potential Step1246
- 38.9Tunneling Through a Potential Barrier1248
39More About Matter Waves1258
- 39.1Energies of a Trapped Electron1258
- 39.2Wave Functions of a Trapped Electron1264
- 39.3An Electron in a Finite Well1268
- 39.4Two- and Three-Dimensional Electron Traps1270
- 39.5The Hydrogen Atom1275
40All About Atoms1293
- 40.1Properties of Atoms1293
- 40.2The Stern–gerlach Experiment1300
- 40.3Magnetic Resonance1303
- 40.4Exclusion Principle and Multiple Electrons in a Trap1304
- 40.5Building the Periodic Table1308
- 40.6X Rays and the Ordering of the Elements1310
- 40.7Lasers1314
41Conduction of Electricity in Solids1327
- 41.1The Electrical Properties of Metals1327
- 41.2Semiconductors and Doping1336
- 41.3The p-n Junction and the Transistor1341
42Nuclear Physics1352
- 42.1Discovering the Nucleus1352
- 42.2Some Nuclear Properties1355
- 42.3Radioactive Decay1362
- 42.4Alpha Decay1365
- 42.5Beta Decay1368
- 42.6Radioactive Dating1371
- 42.7Measuring Radiation Dosage1372
- 42.8Nuclear Models1373
43Energy from the Nucleus1385
- 43.1Nuclear Fission1385
- 43.2The Nuclear Reactor1392
- 43.3A Natural Nuclear Reactor1396
- 43.4Thermonuclear Fusion: The Basic Process1398
- 43.5Thermonuclear Fusion in the Sun and Other Stars1400
- 43.6Controlled Thermonuclear Fusion1402
44Quarks, Leptons, and the Big Bang1410
- 44.1General Properties of Elementary Particles1410
- 44.2Leptons, Hadrons, and Strangeness1419
- 44.3Quarks and Messenger Particles1425
- 44.4Cosmology1431
부록 AThe International System of Units (SI)A-1
부록 BSome Fundamental Constants of PhysicsA-3
부록 CSome Astronomical DataA-4
부록 DConversion FactorsA-5
부록 EMathematical FormulasA-9
부록 FProperties of the ElementsA-12
부록 GPeriodic Table of the ElementsA-15
원본 목차 PDF로 대조 완료 — 44장 268개 모듈 + 부록 7종, 쪽수 포함. 11판에서 12판 Extended로 교체했다. 이 책은 절에 해당하는 단위를 모듈(x.y)이라 부르고 목차에 모듈 제목을 전부 대문자로 싣는데, 여기서는 일반 표기로 바꿔 실었다. 모듈 아래 소제목(“What Is Physics?” 등)은 옮기지 않았다. Extended판이라 38~44장(광자·물질파·원자·고체·핵·입자)이 붙어 있고, 그중 41장 Conduction of Electricity in Solids가 반도체·도핑·p-n 접합·트랜지스터를 1학년 수준으로 훑는다 — 7부·9부의 같은 주제를 얕게 먼저 보는 자리.
Fundamentals of Heat and Mass Transfer
3부Bergman · Lavine · Incropera · DeWitt · 8th ed. · Wiley, 2017 · ISBN 978-1-118-98917-3 원본 대조
1Introduction1
- 1.1What and How?2
- 1.2Physical Origins and Rate Equations3
- 1.2.1Conduction3
- 1.2.2Convection6
- 1.2.3Radiation8
- 1.2.4The Thermal Resistance Concept12
- 1.3Relationship to Thermodynamics12
- 1.3.1Relationship to the First Law of Thermodynamics (Conservation of Energy)13
- 1.3.2Relationship to the Second Law of Thermodynamics and the Efficiency of Heat Engines28
- 1.4Units and Dimensions33
- 1.5Analysis of Heat Transfer Problems: Methodology35
- 1.6Relevance of Heat Transfer38
- 1.7Summary42
2Introduction to Conduction59
- 2.1The Conduction Rate Equation60
- 2.2The Thermal Properties of Matter62
- 2.2.1Thermal Conductivity63
- 2.2.2Other Relevant Properties70
- 2.3The Heat Diffusion Equation74
- 2.4Boundary and Initial Conditions82
- 2.5Summary86
3One-Dimensional, Steady-State Conduction99
- 3.1The Plane Wall100
- 3.1.1Temperature Distribution100
- 3.1.2Thermal Resistance102
- 3.1.3The Composite Wall103
- 3.1.4Contact Resistance105
- 3.1.5Porous Media107
- 3.2An Alternative Conduction Analysis121
- 3.3Radial Systems125
- 3.3.1The Cylinder125
- 3.3.2The Sphere130
- 3.4Summary of One-Dimensional Conduction Results131
- 3.5Conduction with Thermal Energy Generation131
- 3.5.1The Plane Wall132
- 3.5.2Radial Systems138
- 3.5.3Tabulated Solutions139
- 3.5.4Application of Resistance Concepts139
- 3.6Heat Transfer from Extended Surfaces143
- 3.6.1A General Conduction Analysis145
- 3.6.2Fins of Uniform Cross-Sectional Area147
- 3.6.3Fin Performance Parameters153
- 3.6.4Fins of Nonuniform Cross-Sectional Area156
- 3.6.5Overall Surface Efficiency159
- 3.7Other Applications of One-Dimensional, Steady-State Conduction163
- 3.7.1The Bioheat Equation163
- 3.7.2Thermoelectric Power Generation167
- 3.7.3Nanoscale Conduction175
- 3.8Summary179
4Two-Dimensional, Steady-State Conduction209
- 4.1General Considerations and Solution Techniques210
- 4.2The Method of Separation of Variables211
- 4.3The Conduction Shape Factor and the Dimensionless Conduction Heat Rate215
- 4.4Finite-Difference Equations221
- 4.4.1The Nodal Network221
- 4.4.2Finite-Difference Form of the Heat Equation: No Generation and Constant Properties222
- 4.4.3Finite-Difference Form of the Heat Equation: The Energy Balance Method223
- 4.5Solving the Finite-Difference Equations230
- 4.5.1Formulation as a Matrix Equation230
- 4.5.2Verifying the Accuracy of the Solution231
- 4.6Summary236
- 4S.1The Graphical MethodW-1
- 4S.1.1Methodology of Constructing a Flux PlotW-1
- 4S.1.2Determination of the Heat Transfer RateW-2
- 4S.1.3The Conduction Shape FactorW-3
- 4S.2The Gauss-Seidel Method: Example of UsageW-5
5Transient Conduction253
- 5.1The Lumped Capacitance Method254
- 5.2Validity of the Lumped Capacitance Method257
- 5.3General Lumped Capacitance Analysis261
- 5.3.1Radiation Only262
- 5.3.2Negligible Radiation262
- 5.3.3Convection Only with Variable Convection Coefficient263
- 5.3.4Additional Considerations263
- 5.4Spatial Effects272
- 5.5The Plane Wall with Convection273
- 5.5.1Exact Solution274
- 5.5.2Approximate Solution274
- 5.5.3Total Energy Transfer: Approximate Solution276
- 5.5.4Additional Considerations276
- 5.6Radial Systems with Convection277
- 5.6.1Exact Solutions277
- 5.6.2Approximate Solutions278
- 5.6.3Total Energy Transfer: Approximate Solutions278
- 5.6.4Additional Considerations279
- 5.7The Semi-Infinite Solid284
- 5.8Objects with Constant Surface Temperatures or Surface Heat Fluxes291
- 5.8.1Constant Temperature Boundary Conditions291
- 5.8.2Constant Heat Flux Boundary Conditions293
- 5.8.3Approximate Solutions294
- 5.9Periodic Heating301
- 5.10Finite-Difference Methods304
- 5.10.1Discretization of the Heat Equation: The Explicit Method304
- 5.10.2Discretization of the Heat Equation: The Implicit Method311
- 5.11Summary318
- 5S.1Graphical Representation of One-Dimensional, Transient Conduction in the Plane Wall, Long Cylinder, and SphereW-12
- 5S.2Analytical Solutions of Multidimensional EffectsW-16
6Introduction to Convection341
- 6.1The Convection Boundary Layers342
- 6.1.1The Velocity Boundary Layer342
- 6.1.2The Thermal Boundary Layer343
- 6.1.3The Concentration Boundary Layer345
- 6.1.4Significance of the Boundary Layers346
- 6.2Local and Average Convection Coefficients346
- 6.2.1Heat Transfer346
- 6.2.2Mass Transfer347
- 6.3Laminar and Turbulent Flow353
- 6.3.1Laminar and Turbulent Velocity Boundary Layers353
- 6.3.2Laminar and Turbulent Thermal and Species Concentration Boundary Layers355
- 6.4The Boundary Layer Equations358
- 6.4.1Boundary Layer Equations for Laminar Flow359
- 6.4.2Compressible Flow362
- 6.5Boundary Layer Similarity: The Normalized Boundary Layer Equations362
- 6.5.1Boundary Layer Similarity Parameters363
- 6.5.2Dependent Dimensionless Parameters363
- 6.6Physical Interpretation of the Dimensionless Parameters372
- 6.7Boundary Layer Analogies374
- 6.7.1The Heat and Mass Transfer Analogy375
- 6.7.2Evaporative Cooling378
- 6.7.3The Reynolds Analogy381
- 6.8Summary382
- 6S.1Derivation of the Convection Transfer EquationsW-25
- 6S.1.1Conservation of MassW-25
- 6S.1.2Newton’s Second Law of MotionW-26
- 6S.1.3Conservation of EnergyW-29
- 6S.1.4Conservation of SpeciesW-32
7External Flow395
- 7.1The Empirical Method397
- 7.2The Flat Plate in Parallel Flow398
- 7.2.1Laminar Flow over an Isothermal Plate: A Similarity Solution399
- 7.2.2Turbulent Flow over an Isothermal Plate405
- 7.2.3Mixed Boundary Layer Conditions406
- 7.2.4Unheated Starting Length407
- 7.2.5Flat Plates with Constant Heat Flux Conditions408
- 7.2.6Limitations on Use of Convection Coefficients409
- 7.3Methodology for a Convection Calculation409
- 7.4The Cylinder in Cross Flow417
- 7.4.1Flow Considerations417
- 7.4.2Convection Heat and Mass Transfer419
- 7.5The Sphere427
- 7.6Flow Across Banks of Tubes430
- 7.7Impinging Jets439
- 7.7.1Hydrodynamic and Geometric Considerations439
- 7.7.2Convection Heat and Mass Transfer440
- 7.8Packed Beds444
- 7.9Summary445
8Internal Flow469
- 8.1Hydrodynamic Considerations470
- 8.1.1Flow Conditions470
- 8.1.2The Mean Velocity471
- 8.1.3Velocity Profile in the Fully Developed Region472
- 8.1.4Pressure Gradient and Friction Factor in Fully Developed Flow474
- 8.2Thermal Considerations475
- 8.2.1The Mean Temperature476
- 8.2.2Newton’s Law of Cooling477
- 8.2.3Fully Developed Conditions477
- 8.3The Energy Balance481
- 8.3.1General Considerations481
- 8.3.2Constant Surface Heat Flux482
- 8.3.3Constant Surface Temperature485
- 8.4Laminar Flow in Circular Tubes: Thermal Analysis and Convection Correlations489
- 8.4.1The Fully Developed Region489
- 8.4.2The Entry Region494
- 8.4.3Temperature-Dependent Properties496
- 8.5Convection Correlations: Turbulent Flow in Circular Tubes496
- 8.6Convection Correlations: Noncircular Tubes and the Concentric Tube Annulus504
- 8.7Heat Transfer Enhancement507
- 8.8Forced Convection in Small Channels510
- 8.8.1Microscale Convection in Gases (0.1 µm ≲ Dh ≲ 100 µm)510
- 8.8.2Microscale Convection in Liquids511
- 8.8.3Nanoscale Convection (Dh ≲ 100 nm)512
- 8.9Convection Mass Transfer515
- 8.10Summary517
9Free Convection539
- 9.1Physical Considerations540
- 9.2The Governing Equations for Laminar Boundary Layers542
- 9.3Similarity Considerations544
- 9.4Laminar Free Convection on a Vertical Surface545
- 9.5The Effects of Turbulence548
- 9.6Empirical Correlations: External Free Convection Flows550
- 9.6.1The Vertical Plate551
- 9.6.2Inclined and Horizontal Plates554
- 9.6.3The Long Horizontal Cylinder559
- 9.6.4Spheres563
- 9.7Free Convection Within Parallel Plate Channels564
- 9.7.1Vertical Channels565
- 9.7.2Inclined Channels567
- 9.8Empirical Correlations: Enclosures567
- 9.8.1Rectangular Cavities567
- 9.8.2Concentric Cylinders570
- 9.8.3Concentric Spheres571
- 9.9Combined Free and Forced Convection573
- 9.10Convection Mass Transfer574
- 9.11Summary575
10Boiling and Condensation595
- 10.1Dimensionless Parameters in Boiling and Condensation596
- 10.2Boiling Modes597
- 10.3Pool Boiling598
- 10.3.1The Boiling Curve598
- 10.3.2Modes of Pool Boiling599
- 10.4Pool Boiling Correlations602
- 10.4.1Nucleate Pool Boiling602
- 10.4.2Critical Heat Flux for Nucleate Pool Boiling604
- 10.4.3Minimum Heat Flux605
- 10.4.4Film Pool Boiling605
- 10.4.5Parametric Effects on Pool Boiling606
- 10.5Forced Convection Boiling611
- 10.5.1External Forced Convection Boiling612
- 10.5.2Two-Phase Flow612
- 10.5.3Two-Phase Flow in Microchannels615
- 10.6Condensation: Physical Mechanisms615
- 10.7Laminar Film Condensation on a Vertical Plate617
- 10.8Turbulent Film Condensation621
- 10.9Film Condensation on Radial Systems626
- 10.10Condensation in Horizontal Tubes631
- 10.11Dropwise Condensation632
- 10.12Summary633
11Heat Exchangers645
- 11.1Heat Exchanger Types646
- 11.2The Overall Heat Transfer Coefficient648
- 11.3Heat Exchanger Analysis: Use of the Log Mean Temperature Difference651
- 11.3.1The Parallel-Flow Heat Exchanger652
- 11.3.2The Counterflow Heat Exchanger654
- 11.3.3Special Operating Conditions655
- 11.4Heat Exchanger Analysis: The Effectiveness–NTU Method662
- 11.4.1Definitions662
- 11.4.2Effectiveness–NTU Relations663
- 11.5Heat Exchanger Design and Performance Calculations670
- 11.6Additional Considerations679
- 11.7Summary687
- 11S.1Log Mean Temperature Difference Method for Multipass and Cross-Flow Heat ExchangersW-40
- 11S.2Compact Heat ExchangersW-44
12Radiation: Processes and Properties701
- 12.1Fundamental Concepts702
- 12.2Radiation Heat Fluxes705
- 12.3Radiation Intensity707
- 12.3.1Mathematical Definitions707
- 12.3.2Radiation Intensity and Its Relation to Emission708
- 12.3.3Relation to Irradiation713
- 12.3.4Relation to Radiosity for an Opaque Surface715
- 12.3.5Relation to the Net Radiative Flux for an Opaque Surface716
- 12.4Blackbody Radiation716
- 12.4.1The Planck Distribution717
- 12.4.2Wien’s Displacement Law718
- 12.4.3The Stefan–Boltzmann Law718
- 12.4.4Band Emission719
- 12.5Emission from Real Surfaces726
- 12.6Absorption, Reflection, and Transmission by Real Surfaces735
- 12.6.1Absorptivity736
- 12.6.2Reflectivity737
- 12.6.3Transmissivity739
- 12.6.4Special Considerations739
- 12.7Kirchhoff’s Law744
- 12.8The Gray Surface746
- 12.9Environmental Radiation752
- 12.9.1Solar Radiation753
- 12.9.2The Atmospheric Radiation Balance755
- 12.9.3Terrestrial Solar Irradiation757
- 12.10Summary760
13Radiation Exchange Between Surfaces785
- 13.1The View Factor786
- 13.1.1The View Factor Integral786
- 13.1.2View Factor Relations787
- 13.2Blackbody Radiation Exchange796
- 13.3Radiation Exchange Between Opaque, Diffuse, Gray Surfaces in an Enclosure800
- 13.3.1Net Radiation Exchange at a Surface801
- 13.3.2Radiation Exchange Between Surfaces802
- 13.3.3The Two-Surface Enclosure808
- 13.3.4Two-Surface Enclosures in Series and Radiation Shields810
- 13.3.5The Reradiating Surface812
- 13.4Multimode Heat Transfer817
- 13.5Implications of the Simplifying Assumptions820
- 13.6Radiation Exchange with Participating Media820
- 13.6.1Volumetric Absorption820
- 13.6.2Gaseous Emission and Absorption821
- 13.7Summary825
14Diffusion Mass Transfer849
- 14.1Physical Origins and Rate Equations850
- 14.1.1Physical Origins850
- 14.1.2Mixture Composition851
- 14.1.3Fick’s Law of Diffusion852
- 14.1.4Mass Diffusivity853
- 14.2Mass Transfer in Nonstationary Media855
- 14.2.1Absolute and Diffusive Species Fluxes855
- 14.2.2Evaporation in a Column858
- 14.3The Stationary Medium Approximation863
- 14.4Conservation of Species for a Stationary Medium863
- 14.4.1Conservation of Species for a Control Volume864
- 14.4.2The Mass Diffusion Equation864
- 14.4.3Stationary Media with Specified Surface Concentrations866
- 14.5Boundary Conditions and Discontinuous Concentrations at Interfaces870
- 14.5.1Evaporation and Sublimation871
- 14.5.2Solubility of Gases in Liquids and Solids871
- 14.5.3Catalytic Surface Reactions876
- 14.6Mass Diffusion with Homogeneous Chemical Reactions878
- 14.7Transient Diffusion881
- 14.8Summary887
부록 AThermophysical Properties of Matter897
부록 BMathematical Relations and Functions929
부록 CThermal Conditions Associated with Uniform Energy Generation in One-Dimensional, Steady-State Systems935
부록 DThe Gauss–Seidel Method941
부록 EThe Convection Transfer Equations943
- E.1Conservation of Mass944
- E.2Newton’s Second Law of Motion944
- E.3Conservation of Energy945
- E.4Conservation of Species946
부록 FBoundary Layer Equations for Turbulent Flow947
부록 GAn Integral Laminar Boundary Layer Solution for Parallel Flow over a Flat Plate951
원본 목차 PDF로 대조 완료 — 14장 + 부록 7종, 130개 절과 158개 소절, 쪽수 포함. 5판(Incropera·DeWitt 2인 저자판)에서 8판으로 교체했다. 14장 구성은 5판과 같지만 절이 늘었다 — §3.1.5 Porous Media, §3.7.2 Thermoelectric Power Generation, §3.7.3 Nanoscale Conduction, §8.8 Forced Convection in Small Channels가 5판에 없던 것으로 박막·마이크로 스케일 열전달을 직접 다룬다. 쪽수가 W-로 시작하는 4S·5S·6S·11S 절은 인쇄본이 아니라 온라인 보충 자료다.
4부 · 화학 기초
Atkins' Physical Chemistry
4부Atkins · de Paula · Keeler · 12th ed. · Oxford University Press, 2022 · ISBN 978-0-19-884781-6 원본 대조
원본 목차 PDF로 대조 완료 — 19개 Focus, 91개 Topic, 241개 세부 절, 쪽수 포함. 11판에서 12판으로 교체했다. 장이 아니라 Focus 단위이고 그 아래 알파벳 Topic(1A, 1B …), 다시 그 아래 번호 절(1A.1 …)이 온다. 인용할 때는 Topic 기호를 반드시 함께 적어야 한다 — §1A.2처럼. 각 Topic 끝의 Checklist of concepts·equations와 절 아래 (a)(b)(c) 단계는 목차 항목이 아니므로 옮기지 않았다. 반도체에 바로 걸리는 자리는 Focus 15 Solids — 15A 결정 구조, 15B 회절, 15C 고체의 결합(밴드), 15E 전기적 성질, 15G 광학적 성질.
Inorganic Chemistry
4부Weller · Overton · Rourke · Armstrong · 7th ed. · Oxford University Press, 2018 · ISBN 978-0-19-876812-8 원본 대조
Part 1 — Foundations (p.1)
1Atomic structure3
- The structures of hydrogenic atoms7
- 1.1Spectroscopic information7
- 1.2Some principles of quantum mechanics8
- 1.3Atomic orbitals9
- Many-electron atoms15
- 1.4Penetration and shielding15
- 1.5The building-up principle18
- 1.6The classification of the elements20
- 1.7Atomic properties23
2Molecular structure and bonding33
- Lewis structures33
- 2.1The octet rule34
- 2.2Resonance35
- 2.3The VSEPR model35
- Valence bond theory38
- 2.4The hydrogen molecule38
- 2.5Homonuclear diatomic molecules39
- 2.6Polyatomic molecules40
- Molecular orbital theory42
- 2.7An introduction to the theory42
- 2.8Homonuclear diatomic molecules45
- 2.9Heteronuclear diatomic molecules48
- 2.10Bond properties51
- Bond properties, reaction enthalpies, and kinetics53
- 2.11Bond length53
- 2.12Bond strength and reaction enthalpies54
- 2.13Electronegativity and bond enthalpy55
- 2.14An introduction to catalysis57
3Molecular symmetry62
- An introduction to symmetry analysis62
- 3.1Symmetry operations, elements, and point groups63
- 3.2Character tables69
- Applications of symmetry71
- 3.3Polar molecules71
- 3.4Chiral molecules72
- 3.5Molecular vibrations73
- The symmetries of molecular orbitals77
- 3.6Symmetry-adapted linear combinations77
- 3.7The construction of molecular orbitals77
- 3.8The vibrational analogy80
- Representations81
- 3.9The reduction of a representation81
- 3.10Projection operators82
- 3.11Polyatomic molecules83
4The structures of simple solids90
- The description of the structures of solids91
- 4.1Unit cells and the description of crystal structures91
- 4.2The close packing of spheres94
- 4.3Holes in close-packed structures97
- The structures of metals and alloys100
- 4.4Polytypism101
- 4.5Nonclose-packed structures101
- 4.6Polymorphism of metals102
- 4.7Atomic radii of metals103
- 4.8Alloys and interstitials104
- Ionic solids108
- 4.9Characteristic structures of ionic solids109
- 4.10The rationalization of structures117
- The energetics of ionic bonding121
- 4.11Lattice enthalpy and the Born–Haber cycle122
- 4.12The calculation of lattice enthalpies123
- 4.13Comparison of experimental and theoretical values125
- 4.14The Kapustinskii equation127
- 4.15Consequences of lattice enthalpies128
- Defects and nonstoichiometry131
- 4.16The origins and types of defects131
- 4.17Nonstoichiometric compounds and solid solutions135
- The electronic structures of solids137
- 4.18The conductivities of inorganic solids137
- 4.19Bands formed from overlapping atomic orbitals138
- 4.20Semiconduction142
5Acids and bases149
- Brønsted acidity150
- 5.1Proton transfer equilibria in water151
- Characteristics of Brønsted acids157
- 5.2Periodic trends in aqua acid strength157
- 5.3Simple oxoacids158
- 5.4Anhydrous oxides161
- 5.5Polyoxo compound formation162
- Lewis acidity164
- 5.6Examples of Lewis acids and bases164
- 5.7Group characteristics of Lewis acids165
- 5.8Hydrogen bonding168
- Reactions and properties of Lewis acids and bases170
- 5.9The fundamental types of reaction170
- 5.10Factors governing interactions between Lewis acids and bases171
- 5.11Thermodynamic Lewis acidity parameters173
- Nonaqueous solvents174
- 5.12Solvent levelling174
- 5.13The Hammett acidity function and its application to strong, concentrated acids175
- 5.14The solvent system definition of acids and bases176
- 5.15Solvents as acids and bases176
- Applications of acid–base chemistry180
- 5.16Superacids and superbases180
- 5.17Heterogeneous acid–base reactions180
6Oxidation and reduction185
- Reduction potentials186
- 6.1Redox half-reactions186
- 6.2Standard potentials and spontaneity187
- 6.3Trends in standard potentials190
- 6.4The electrochemical series191
- 6.5The Nernst equation192
- Redox stability193
- 6.6The influence of pH193
- 6.7Reactions with water194
- 6.8Oxidation by atmospheric oxygen196
- 6.9Disproportionation and comproportionation196
- 6.10The influence of complexation197
- 6.11The relation between solubility and standard potentials198
- Diagrammatic presentation of potential data199
- 6.12Latimer diagrams199
- 6.13Frost diagrams200
- 6.14Proton-coupled electron transfer: Pourbaix diagrams204
- 6.15Applications in environmental chemistry: natural waters205
- Chemical extraction of the elements206
- 6.16Chemical reduction206
- 6.17Chemical oxidation210
- 6.18Electrochemical extraction210
7An introduction to coordination compounds216
- The language of coordination chemistry217
- 7.1Representative ligands218
- 7.2Nomenclature221
- Constitution and geometry222
- 7.3Low coordination numbers222
- 7.4Intermediate coordination numbers223
- 7.5Higher coordination numbers225
- 7.6Polymetallic complexes227
- Isomerism and chirality227
- 7.7Square-planar complexes228
- 7.8Tetrahedral complexes230
- 7.9Trigonal-bipyramidal and square-pyramidal complexes230
- 7.10Octahedral complexes231
- 7.11Ligand chirality235
- The thermodynamics of complex formation237
- 7.12Formation constants237
- 7.13Trends in successive formation constants238
- 7.14The chelate and macrocyclic effects239
- 7.15Steric effects and electron delocalization240
8Physical techniques in inorganic chemistry244
- Diffraction methods245
- 8.1X-ray diffraction245
- 8.2Neutron diffraction249
- Absorption and emission spectroscopies251
- 8.3Ultraviolet–visible spectroscopy252
- 8.4Fluorescence or emission spectroscopy255
- 8.5Infrared and Raman spectroscopy256
- Resonance techniques260
- 8.6Nuclear magnetic resonance260
- 8.7Electron paramagnetic resonance266
- 8.8Mössbauer spectroscopy268
- Ionization-based techniques269
- 8.9Photoelectron spectroscopy269
- 8.10X-ray absorption spectroscopy270
- 8.11Mass spectrometry271
- Chemical analysis274
- 8.12Atomic absorption spectroscopy274
- 8.13CHN analysis274
- 8.14X-ray fluorescence elemental analysis275
- 8.15Thermal analysis276
- Magnetometry and magnetic susceptibility278
- Electrochemical techniques279
- Microscopy281
- 8.16Scanning probe microscopy281
- 8.17Electron microscopy282
Part 2 — The elements and their compounds (p.287)
9Periodic trends289
- Periodic properties of the elements289
- 9.1Valence electron configurations289
- 9.2Atomic parameters290
- 9.3Occurrence295
- 9.4Metallic character296
- 9.5Oxidation states297
- Periodic characteristics of compounds300
- 9.6Presence of unpaired electrons300
- 9.7Coordination numbers301
- 9.8Bond enthalpy trends301
- 9.9Binary compounds302
- 9.10Wider aspects of periodicity305
- 9.11Anomalous nature of the first member of each group308
10Hydrogen311
- Part A: The essentials311
- 10.1The element312
- 10.2Simple compounds313
- Part B: The detail317
- 10.3Nuclear properties317
- 10.4Production of dihydrogen318
- 10.5Reactions of dihydrogen321
- 10.6Compounds of hydrogen322
- 10.7General methods for synthesis of binary hydrogen compounds332
11The Group 1 elements336
- Part A: The essentials336
- 11.1The elements337
- 11.2Simple compounds338
- 11.3The atypical properties of lithium340
- Part B: The detail340
- 11.4Occurrence and extraction340
- 11.5Uses of the elements and their compounds341
- 11.6Hydrides344
- 11.7Halides345
- 11.8Oxides and related compounds346
- 11.9Sulfides, selenides, and tellurides348
- 11.10Hydroxides348
- 11.11Compounds of oxoacids349
- 11.12Nitrides and carbides351
- 11.13Solubility and hydration352
- 11.14Solutions in liquid ammonia352
- 11.15Zintl phases containing alkali metals353
- 11.16Coordination compounds353
- 11.17Organometallic compounds355
12The Group 2 elements358
- Part A: The essentials359
- 12.1The elements359
- 12.2Simple compounds360
- 12.3The anomalous properties of beryllium361
- Part B: The detail362
- 12.4Occurrence and extraction362
- 12.5Uses of the elements and their compounds363
- 12.6Hydrides365
- 12.7Halides365
- 12.8Oxides, sulfides, and hydroxides367
- 12.9Nitrides and carbides369
- 12.10Salts of oxoacids370
- 12.11Solubility, hydration, and beryllates374
- 12.12Coordination compounds374
- 12.13Organometallic compounds375
- 12.14Lower oxidation state Group 2 compounds377
13The Group 13 elements380
- Part A: The essentials381
- 13.1The elements381
- 13.2Compounds382
- 13.3Boron clusters and borides385
- Part B: The detail386
- 13.4Occurrence and recovery387
- 13.5Uses of the elements and their compounds387
- 13.6Simple hydrides of boron388
- 13.7Boron trihalides391
- 13.8Boron–oxygen compounds393
- 13.9Compounds of boron with nitrogen394
- 13.10Metal borides396
- 13.11Higher boranes and borohydrides397
- 13.12Metallaboranes and carboranes402
- 13.13The hydrides of aluminium, gallium, indium, and thallium404
- 13.14Trihalides of aluminium, gallium, indium, and thallium405
- 13.15Low oxidation state halides of aluminium, gallium, indium, and thallium405
- 13.16Oxo compounds of aluminium, gallium, indium, and thallium406
- 13.17Sulfides of gallium, indium, and thallium407
- 13.18Compounds with Group 15 elements407
- 13.19Zintl phases408
- 13.20Organometallic compounds408
14The Group 14 elements412
- Part A: The essentials413
- 14.1The elements413
- 14.2Simple compounds415
- 14.3Extended silicon–oxygen compounds416
- Part B: The detail417
- 14.4Occurrence and recovery417
- 14.5Diamond and graphite418
- 14.6Other forms of carbon419
- 14.7Hydrides423
- 14.8Compounds with halogens425
- 14.9Compounds of carbon with oxygen and sulfur428
- 14.10Simple compounds of silicon with oxygen431
- 14.11Oxides of germanium, tin, and lead433
- 14.12Compounds with nitrogen433
- 14.13Carbides434
- 14.14Silicides436
- 14.15Extended silicon–oxygen compounds437
- 14.16Organosilicon and organogermanium compounds440
- 14.17Organometallic compounds441
15The Group 15 elements445
- Part A: The essentials446
- 15.1The elements446
- 15.2Simple compounds447
- 15.3Oxides and oxoanions of nitrogen449
- Part B: The detail450
- 15.4Occurrence and recovery450
- 15.5Uses450
- 15.6Nitrogen activation453
- 15.7Nitrides and azides454
- 15.8Phosphides455
- 15.9Arsenides, antimonides, and bismuthides456
- 15.10Hydrides456
- 15.11Halides459
- 15.12Oxohalides460
- 15.13Oxides and oxoanions of nitrogen460
- 15.14Oxides of phosphorus, arsenic, antimony, and bismuth465
- 15.15Oxoanions of phosphorus, arsenic, antimony, and bismuth466
- 15.16Condensed phosphates467
- 15.17Phosphazenes468
- 15.18Organometallic compounds of arsenic, antimony, and bismuth469
16The Group 16 elements474
- Part A: The essentials475
- 16.1The elements475
- 16.2Simple compounds476
- 16.3Ring and cluster compounds478
- Part B: The detail478
- 16.4Oxygen478
- 16.5Reactivity of oxygen481
- 16.6Sulfur481
- 16.7Selenium, tellurium, and polonium483
- 16.8Hydrides484
- 16.9Halides487
- 16.10Metal oxides487
- 16.11Metal sulfides, selenides, tellurides, and polonides488
- 16.12Oxides489
- 16.13Oxoacids of sulfur491
- 16.14Polyanions of sulfur, selenium, and tellurium495
- 16.15Polycations of sulfur, selenium, and tellurium496
- 16.16Sulfur–nitrogen compounds496
17The Group 17 elements500
- Part A: The essentials501
- 17.1The elements501
- 17.2Simple compounds502
- 17.3The interhalogens503
- Part B: The detail505
- 17.4Occurrence, recovery, and uses505
- 17.5Molecular structure and properties508
- 17.6Reactivity trends510
- 17.7Pseudohalogens510
- 17.8Special properties of fluorine compounds511
- 17.9Structural features512
- 17.10The interhalogens513
- 17.11Halogen oxides516
- 17.12Oxoacids and oxoanions517
- 17.13Thermodynamic aspects of oxoanion redox reactions518
- 17.14Trends in rates of oxoanion redox reactions519
- 17.15Redox properties of individual oxidation states520
- 17.16Fluorocarbons522
18The Group 18 elements526
- Part A: The essentials527
- 18.1The elements527
- 18.2Simple compounds527
- Part B: The detail528
- 18.3Occurrence and recovery528
- 18.4Uses529
- 18.5Synthesis and structure of xenon fluorides530
- 18.6Reactions of xenon fluorides531
- 18.7Xenon–oxygen compounds532
- 18.8Xenon insertion compounds533
- 18.9Organoxenon compounds534
- 18.10Coordination compounds534
- 18.11Other compounds of noble gases535
19The d-block elements538
- Part A: The essentials539
- 19.1Occurrence and recovery539
- 19.2Chemical and physical properties539
- Part B: The detail542
- 19.3Group 3: scandium, yttrium, and lanthanum542
- 19.4Group 4: titanium, zirconium, and hafnium543
- 19.5Group 5: vanadium, niobium, and tantalum545
- 19.6Group 6: chromium, molybdenum, and tungsten549
- 19.7Group 7: manganese, technetium, and rhenium554
- 19.8Group 8: iron, ruthenium, and osmium556
- 19.9Group 9: cobalt, rhodium, and iridium558
- 19.10Group 10: nickel, palladium, and platinum559
- 19.11Group 11: copper, silver, and gold561
- 19.12Group 12: zinc, cadmium, and mercury563
20d-Metal complexes: electronic structure and properties568
- Electronic structure568
- 20.1Crystal-field theory569
- 20.2Ligand-field theory579
- Electronic spectra583
- 20.3Electronic spectra of atoms584
- 20.4Electronic spectra of complexes588
- 20.5Charge-transfer bands593
- 20.6Selection rules and intensities595
- 20.7Luminescence597
- Magnetism598
- 20.8Cooperative magnetism598
- 20.9Spin-crossover complexes600
21Coordination chemistry: reactions of complexes604
- Ligand substitution reactions605
- 21.1Rates of ligand substitution605
- 21.2The classification of mechanisms606
- Ligand substitution in square-planar complexes610
- 21.3The nucleophilicity of the entering group610
- 21.4The shape of the transition state611
- Ligand substitution in octahedral complexes614
- 21.5Rate laws and their interpretation614
- 21.6The activation of octahedral complexes615
- 21.7Base hydrolysis619
- 21.8Stereochemistry619
- 21.9Isomerization reactions620
- Redox reactions621
- 21.10The classification of redox reactions621
- 21.11The inner-sphere mechanism622
- 21.12The outer-sphere mechanism624
- Photochemical reactions627
- 21.13Prompt and delayed reactions628
- 21.14d–d and charge-transfer reactions628
- 21.15Transitions in metal–metal bonded systems629
22d-Metal organometallic chemistry633
- Bonding635
- 22.1Stable electron configurations635
- 22.2Electron-count preference636
- 22.3Electron counting and oxidation states637
- 22.4Nomenclature639
- Ligands640
- 22.5Carbon monoxide640
- 22.6Phosphines642
- 22.7Hydrides and dihydrogen complexes643
- 22.8η¹-Alkyl, -alkenyl, -alkynyl, and -aryl ligands644
- 22.9η²-Alkene and -alkyne ligands645
- 22.10Nonconjugated diene and polyene ligands646
- 22.11Butadiene, cyclobutadiene, and cyclooctatetraene646
- 22.12Benzene and other arenes648
- 22.13The allyl ligand649
- 22.14Cyclopentadiene and cycloheptatriene650
- 22.15Carbenes652
- 22.16Alkanes, agostic hydrogens, and noble gases653
- 22.17Dinitrogen and nitrogen monoxide653
- Compounds654
- 22.18d-Block carbonyls654
- 22.19Metallocenes660
- 22.20Metal–metal bonding and metal clusters664
- Reactions667
- 22.21Ligand substitution667
- 22.22Oxidative addition and reductive elimination670
- 22.23σ-Bond metathesis671
- 22.241,1-Migratory insertion reactions671
- 22.251,2-Insertions and β-hydride elimination672
- 22.26α-, γ-, and δ-Hydride eliminations and cyclometallations673
- Catalysis673
- 22.27Alkene metathesis674
- 22.28Hydrogenation of alkenes675
- 22.29Hydroformylation677
- 22.30Wacker oxidation of alkenes679
- 22.31Palladium-catalysed C–C bond-forming reactions679
- 22.32Oligomerization and polymerization681
23The f-block elements689
- The elements690
- 23.1The valence orbitals690
- 23.2Occurrence and recovery691
- 23.3Physical properties and applications692
- Lanthanoid chemistry693
- 23.4General trends693
- 23.5Optical and magnetic properties696
- 23.6Binary ionic compounds700
- 23.7Ternary and complex oxides702
- 23.8Coordination compounds703
- 23.9Organometallic compounds706
- Actinoid chemistry709
- 23.10General trends709
- 23.11Electronic spectra of the actinoids712
- 23.12Thorium and uranium713
- 23.13Neptunium, plutonium, and americium715
Part 3 — Expanding our horizons: advances and applications (p.719)
24Materials chemistry and nanomaterials721
- Synthesis of materials722
- 24.1The formation of bulk materials722
- Defects and ion transport725
- 24.2Extended defects725
- 24.3Atom and ion diffusion726
- 24.4Solid electrolytes727
- Metal oxides, nitrides, and fluorides731
- 24.5Monoxides of the 3d metals732
- 24.6Higher oxides and complex oxides734
- 24.7Oxide glasses745
- 24.8Nitrides, fluorides, and mixed-anion phases747
- Sulfides, intercalation compounds, and metal-rich phases749
- 24.9Layered MS₂ compounds and intercalation750
- 24.10Chevrel phases and chalcogenide thermoelectrics753
- Framework structures and heterogeneous catalysis in porous materials754
- 24.11Structures based on tetrahedral oxoanions755
- 24.12Structures based on linked octahedral and tetrahedral metal centres758
- 24.13Zeolites and microporous structures in heterogeneous catalysis763
- Hydrides and hydrogen-storage materials765
- 24.14Metal hydrides766
- 24.15Other inorganic hydrogen-storage materials768
- Optical properties of inorganic materials769
- 24.16Coloured solids770
- 24.17White and black pigments771
- 24.18Photocatalysts772
- Semiconductor chemistry773
- 24.19Group 14 semiconductors774
- 24.20Semiconductor systems isoelectronic with silicon775
- Molecular materials and fullerides776
- 24.21Fullerides776
- 24.22Molecular materials chemistry777
- Nanomaterials781
- 24.23Nanomaterial terminology and history781
- 24.24Solution-based synthesis of nanoparticles782
- 24.25Vapour-phase synthesis of nanoparticles via solutions or solids783
- 24.26Templated synthesis of nanomaterials using frameworks, supports, and substrates784
- 24.27Characterization and formation of nanomaterials using microscopy786
- Nanostructures and properties787
- 24.28One-dimensional control: carbon nanotubes and inorganic nanowires787
- 24.29Two-dimensional control: graphene, quantum wells, and solid-state superlattices789
- 24.30Three-dimensional control: mesoporous materials and composites792
- 24.31Special optical properties of nanomaterials796
- Heterogeneous nanoparticle catalysts798
- 24.32The nature of heterogeneous catalysts799
- 24.33Reactions involving heterogeneous nanoparticle catalysts803
25Green chemistry809
- Twelve principles810
- 25.1Prevention810
- 25.2Atom economy811
- 25.3Less hazardous chemical species812
- 25.4Designing safer chemicals813
- 25.5Safer solvents and auxiliaries813
- 25.6Design for energy efficiency815
- 25.7Use of renewable feedstocks816
- 25.8Reduce derivatives817
- 25.9Catalysis818
- 25.10Design for degradation820
- 25.11Real-time analysis for pollution prevention821
- 25.12Inherently safer chemistry for accident prevention821
26Biological inorganic chemistry824
- The organization of cells825
- 26.1The physical structure of cells825
- 26.2The inorganic composition of living organisms825
- 26.3Biological metal-coordination sites828
- Metal ions in transport and communication833
- 26.4Sodium and potassium transport833
- 26.5Calcium signalling proteins835
- 26.6Selective transport and storage of iron836
- 26.7Oxygen transport and storage839
- 26.8Electron transfer842
- Catalytic processes848
- 26.9Acid–base catalysis848
- 26.10Enzymes dealing with H₂O₂ and O₂855
- 26.11Enzymes dealing with radicals and alkyl groups864
- 26.12Oxygen atom transfer by molybdenum and tungsten enzymes868
- 26.13Hydrogenases, enzymes that activate H₂869
- 26.14The nitrogen cycle871
- Metals in gene regulation874
- 26.15Transcription factors and the role of Zn874
- 26.16Iron proteins as sensors875
- 26.17Proteins that sense Cu and Zn levels878
- 26.18Biomineralization878
- Perspectives880
- 26.19The contributions of individual elements880
- 26.20Future directions881
27Inorganic chemistry in medicine885
- The chemistry of elements in medicine885
- 27.1Inorganic complexes in cancer treatment887
- 27.2Anti-arthritis drugs890
- 27.3Bismuth in the treatment of gastric ulcers891
- 27.4Lithium in the treatment of bipolar disorders892
- 27.5Organometallic drugs in the treatment of malaria892
- 27.6Metal complexes as antiviral agents893
- 27.7Metal drugs that slowly release CO: an agent against post-operative stress895
- 27.8Chelation therapy895
- 27.9Imaging agents896
- 27.10Nanoparticles in directed drug delivery898
- 27.11Outlook899
ResourceResource sections901
- 1Selected ionic radii901
- 2Electronic properties of the elements903
- 3Standard potentials905
- 4Character tables918
- 5Symmetry-adapted orbitals922
- 6Tanabe–Sugano diagrams926
OUP 인쇄 Detailed contents(pp. xiii–xx) 전문을 옮겼다. 번호 없는 회색 소제목은 절 위에 오는 주제 묶음이라 번호 칸을 비워 두었다. 10~19장은 각각 Part A: The essentials와 Part B: The detail로 갈라진다. 반도체와 직결되는 곳은 §4.18~4.20(무기 고체의 전도도·원자 궤도 겹침에서 나온 띠·반도체성)과 §24.19~24.20(14족 반도체, 실리콘과 등전자인 반도체계). 장 끝의 FURTHER READING·EXERCISES·TUTORIAL PROBLEMS는 옮기지 않았다. 원본 목차에서 §26.15가 “27.15”로 오식되어 있어 26.15로 바로잡았다.
Principles of Modern Chemistry
4부Oxtoby · Gillis · Butler · 8th ed. · Cengage, 2015 원본 대조
Unit I — Introduction to the Study of Modern Chemistry (p.xxviii)
1The Atom in Modern Chemistry2
- 1.1The Nature of Modern Chemistry2
- 1.2Elements: The Building Blocks of Matter5
- 1.3Indirect Evidence for the Existence of Atoms: Laws of Chemical Combination8
- 1.4The Physical Structure of Atoms15
- 1.5Mass Spectrometry, Isotopes, and the Measurement of Relative Mass23
- 1.6The Mole: Counting Molecules by Weighing26
2Chemical Formulas, Equations, and Reaction Yields35
- 2.1Empirical and Molecular Formulas36
- 2.2Chemical Formula and Percentage Composition37
- 2.3Writing Balanced Chemical Equations39
- 2.4Mass Relationships in Chemical Reactions43
- 2.5Limiting Reactant and Percentage Yield45
Unit II — Chemical Bonding and Molecular Structure (p.50)
3Atomic Shells and Classical Models of Chemical Bonding52
- 3.1Representations of Molecules54
- 3.2The Periodic Table59
- 3.3Forces and Potential Energy in Atoms62
- 3.4Ionization Energies, the Shell Model of the Atom, and Shielding70
- 3.5Electron Affinity77
- 3.6Electronegativity: The Tendency of Atoms to Attract Electrons in Molecules79
- 3.7Forces and Potential Energy in Molecules: Formation of Chemical Bonds83
- 3.8Ionic Bonding85
- 3.9Covalent and Polar Covalent Bonding90
- 3.10Electron Pair Bonds and Lewis Diagrams for Molecules99
- 3.11The Shapes of Molecules: Valence Shell Electron-Pair Repulsion Theory106
- 3.12Oxidation Numbers112
- 3.13Inorganic Nomenclature114
4Introduction to Quantum Mechanics124
- 4.1Preliminaries: Wave Motion and Light126
- 4.2Evidence for Energy Quantization in Atoms130
- 4.3The Bohr Model: Predicting Discrete Energy Levels in Atoms139
- 4.4Evidence for Wave–Particle Duality142
- 4.5The Schrödinger Equation154
- 4.6Quantum Mechanics of Particle-in-a-Box Models158
- 4.7A DEEPER LOOK · Wave Functions for Particles in Two- and Three-Dimensional Boxes166
5Quantum Mechanics and Atomic Structure177
- 5.1The Hydrogen Atom178
- 5.2Shell Model for Many-Electron Atoms196
- 5.3Aufbau Principle and Electron Configurations201
- 5.4Shells and the Periodic Table: Photoelectron Spectroscopy206
- 5.5Periodic Properties and Electronic Structure209
6Quantum Mechanics and Molecular Structure219
- 6.1Quantum Picture of the Chemical Bond221
- 6.2Exact Molecular Orbitals for the Simplest Molecule: H₂⁺225
- 6.3Molecular Orbital Theory and the Linear Combination of Atomic Orbitals Approximation for H₂⁺231
- 6.4Homonuclear Diatomic Molecules: First-Period Atoms235
- 6.5Homonuclear Diatomic Molecules: Second-Period Atoms237
- 6.6Heteronuclear Diatomic Molecules246
- 6.7Summary Comments for the LCAO Method and Diatomic Molecules252
- 6.8Valence Bond Theory and the Electron Pair Bond253
- 6.9Orbital Hybridization for Polyatomic Molecules259
- 6.10Predicting Molecular Structures and Shapes266
- 6.11Using the LCAO and Valence Bond Methods Together270
- 6.12Summary and Comparison of the LCAO and Valence Bond Methods275
- 6.13A DEEPER LOOK · Properties of the Exact Molecular Orbitals for H₂⁺278
7Bonding in Organic Molecules289
- 7.1Petroleum Refining and the Hydrocarbons290
- 7.2The Alkanes291
- 7.3The Alkenes and Alkynes297
- 7.4Aromatic Hydrocarbons300
- 7.5Fullerenes303
- 7.6Functional Groups and Organic Reactions304
- 7.7Pesticides and Pharmaceuticals316
8Bonding in Transition Metal Compounds and Coordination Complexes325
- 8.1Chemistry of the Transition Metals326
- 8.2Introduction to Coordination Chemistry333
- 8.3Structures of Coordination Complexes339
- 8.4Crystal Field Theory: Optical and Magnetic Properties345
- 8.5Optical Properties and the Spectrochemical Series352
- 8.6Bonding in Coordination Complexes355
Unit III — Kinetic Molecular Description of the States of Matter (p.368)
9The Gaseous State370
- 9.1The Chemistry of Gases371
- 9.2Pressure and Temperature of Gases373
- 9.3The Ideal Gas Law380
- 9.4Mixtures of Gases383
- 9.5The Kinetic Theory of Gases385
- 9.6Real Gases: Intermolecular Forces394
- 9.7A DEEPER LOOK · Molecular Collisions and Rate Processes399
10Solids, Liquids, and Phase Transitions414
- 10.1Bulk Properties of Gases, Liquids, and Solids: Molecular Interpretation415
- 10.2Intermolecular Forces: Origins in Molecular Structure421
- 10.3Intermolecular Forces in Liquids426
- 10.4Phase Equilibrium430
- 10.5Phase Transitions432
- 10.6Phase Diagrams434
11Solutions441
- 11.1Composition of Solutions442
- 11.2Nature of Dissolved Species445
- 11.3Reaction Stoichiometry in Solutions: Acid–Base Titrations448
- 11.4Reaction Stoichiometry in Solutions: Oxidation–Reduction Titrations452
- 11.5Phase Equilibrium in Solutions: Nonvolatile Solutes459
- 11.6Phase Equilibrium in Solutions: Volatile Solutes467
- 11.7Colloidal Suspensions472
Unit IV — Equilibrium in Chemical Reactions (p.478)
12Thermodynamic Processes and Thermochemistry480
- 12.1Systems, States, and Processes482
- 12.2The First Law of Thermodynamics: Internal Energy, Work, and Heat485
- 12.3Heat Capacity, Calorimetry, and Enthalpy492
- 12.4The First Law and Ideal Gas Processes495
- 12.5Molecular Contributions to Internal Energy and Heat Capacity498
- 12.6Thermochemistry504
- 12.7Reversible Processes in Ideal Gases512
- 12.8A DEEPER LOOK · Distribution of Energy among Molecules517
13Spontaneous Processes and Thermodynamic Equilibrium526
- 13.1The Nature of Spontaneous Processes527
- 13.2Entropy and Spontaneity: A Molecular Statistical Interpretation530
- 13.3Entropy and Heat: Macroscopic Basis of the Second Law of Thermodynamics535
- 13.4Entropy Changes in Reversible Processes537
- 13.5Entropy Changes and Spontaneity541
- 13.6The Third Law of Thermodynamics544
- 13.7The Gibbs Free Energy547
- 13.8A DEEPER LOOK · Carnot Cycles, Efficiency, and Entropy552
14Chemical Equilibrium563
- 14.1The Nature of Chemical Equilibrium564
- 14.2The Empirical Law of Mass Action568
- 14.3Thermodynamic Description of the Equilibrium State574
- 14.4The Law of Mass Action for Related and Simultaneous Equilibria581
- 14.5Equilibrium Calculations for Gas-Phase and Heterogeneous Reactions583
- 14.6The Direction of Change in Chemical Reactions: Empirical Description589
- 14.7The Direction of Change in Chemical Reactions: Thermodynamic Explanation598
- 14.8Distribution of a Single Species between Immiscible Phases: Extraction and Separation Processes602
15Acid–Base Equilibria611
- 15.1Classifications of Acids and Bases612
- 15.2Properties of Acids and Bases in Aqueous Solutions: The Brønsted–Lowry Scheme619
- 15.3Acid and Base Strength622
- 15.4Equilibria Involving Weak Acids and Bases630
- 15.5Buffer Solutions635
- 15.6Acid–Base Titration Curves640
- 15.7Polyprotic Acids645
- 15.8Organic Acids and Bases: Structure and Reactivity649
- 15.9A DEEPER LOOK · Exact Treatment of Acid–Base Equilibria655
16Solubility and Precipitation Equilibria667
- 16.1The Nature of Solubility Equilibria668
- 16.2Ionic Equilibria between Solids and Solutions671
- 16.3Precipitation and the Solubility Product674
- 16.4The Effects of pH on Solubility678
- 16.5Complex Ions and Solubility680
- 16.6A DEEPER LOOK · Selective Precipitation of Ions685
17Electrochemistry693
- 17.1Electrochemical Cells694
- 17.2Cell Potentials and the Gibbs Free Energy700
- 17.3Concentration Effects and the Nernst Equation708
- 17.4Molecular Electrochemistry715
- 17.5Batteries and Fuel Cells728
- 17.6Corrosion and Corrosion Prevention736
- 17.7Electrometallurgy738
- 17.8A DEEPER LOOK · Electrolysis of Water and Aqueous Solutions744
Unit V — Rates of Chemical and Physical Processes (p.752)
18Chemical Kinetics754
- 18.1Rates of Chemical Reactions755
- 18.2Rate Laws758
- 18.3Reaction Mechanisms766
- 18.4Reaction Mechanisms and Rate769
- 18.5Effect of Temperature on Reaction Rates775
- 18.6Molecular Theories of Elementary Reactions780
- 18.7Reactions in Solution792
- 18.8Catalysis794
19Nuclear Chemistry807
- 19.1Mass–Energy Relationships in Nuclei808
- 19.2Nuclear Decay Processes812
- 19.3Kinetics of Radioactive Decay818
- 19.4Radiation in Biology and Medicine822
- 19.5Nuclear Fission827
- 19.6Nuclear Fusion and Nucleosynthesis832
20Molecular Spectroscopy and Photochemistry839
- 20.1Introduction to Molecular Spectroscopy840
- 20.2Experimental Methods in Molecular Spectroscopy844
- 20.3Rotational and Vibrational Spectroscopy850
- 20.4Nuclear Magnetic Resonance Spectroscopy869
- 20.5Electronic Spectroscopy and Excited State Relaxation Processes873
- 20.6Introduction to Atmospheric Chemistry880
- 20.7Photosynthesis889
- 20.8A DEEPER LOOK · Lasers895
Unit VI — Materials (p.902)
21Structure and Bonding in Solids904
- 21.1Crystal Symmetry and the Unit Cell905
- 21.2Crystal Structure911
- 21.3Cohesion in Solids916
- 21.4Defects and Amorphous Solids923
- 21.5A DEEPER LOOK · Lattice Energies of Crystals927
22Inorganic Materials935
- 22.1Minerals: Naturally Occurring Inorganic Materials936
- 22.2Properties of Ceramics941
- 22.3Silicate Ceramics943
- 22.4Nonsilicate Ceramics948
- 22.5Electrical Conduction in Materials953
- 22.6Band Theory of Conduction957
- 22.7Semiconductors959
- 22.8Pigments and Phosphors: Optical Displays962
23Polymeric Materials and Soft Condensed Matter967
- 23.1Polymerization Reactions for Synthetic Polymers968
- 23.2Applications for Synthetic Polymers972
- 23.3Liquid Crystals979
- 23.4Natural Polymers982
부록 A~GAppendicesA.1
- AScientific Notation and Experimental ErrorA.2
- BSI Units, Unit Conversions, and Physics for General ChemistryA.8
- CMathematics for General ChemistryA.21
- DStandard Chemical Thermodynamic PropertiesA.37
- EStandard Reduction Potentials at 25 °CA.45
- FPhysical Properties of the ElementsA.47
- GAnswers to Odd-Numbered ProblemsA.56
Cengage 인쇄 목차(pp. v–ix) 전문. 장이 아니라 Unit 여섯 개가 큰 단위이고, 심화 절은 본문에서 A DEEPER LOOK으로 표시된다. 반도체 쪽은 21장(고체의 구조와 결합)과 §22.5~22.7(물질의 전기 전도 · 전도의 띠 이론 · 반도체). 부록 쪽수는 본문과 별도로 A.1부터 매겨진다.
5부 · 양자역학
Introduction to Quantum Mechanics
5부Griffiths · Schroeter · 3rd ed. · Cambridge University Press, 2018 원본 대조
Cambridge 인쇄 목차 전문 — 소절과 쪽수까지 옮겼다. 들여쓴 소절의 번호는 셋째 자리만 적었다(§1.3.1 → 1). 3판에서 시간 의존 섭동론이 독립 장에서 빠지고 Ch.11 Quantum Dynamics 안으로 들어갔다 — 페르미 황금률은 §11.4. Ch.6 대칭성·보존 법칙의 병진 연산자가 7.7 블로흐 정리의 전제다. 2판과 장 번호가 다르므로 인용 시 판을 명시할 것.
Modern Quantum Mechanics
5부Sakurai · Napolitano · 3rd ed. · Cambridge, 2020 원본 대조
1Fundamental Concepts
- 1.1The Stern–Gerlach Experiment
- 1Description of the Experiment
- 2Sequential Stern–Gerlach Experiments
- 3Analogy with Polarization of Light
- 1.2Kets, Bras, and Operators
- 1Ket Space
- 2Bra Space and Inner Products
- 3Operators
- 4Multiplication
- 5The Associative Axiom
- 1.3Base Kets and Matrix Representations
- 1Eigenkets of an Observable
- 2Eigenkets as Base Kets
- 3Matrix Representations
- 4Spin ½ Systems
- 1.4Measurements, Observables, and the Uncertainty Relations
- 1Measurements
- 2Spin ½ Systems, Once Again
- 3Compatible Observables
- 4Incompatible Observables
- 5The Uncertainty Relation
- 1.5Change of Basis
- 1Transformation Operator
- 2Transformation Matrix
- 3Diagonalization
- 4Unitary Equivalent Observables
- 1.6Position, Momentum, and Translation
- 1Continuous Spectra
- 2Position Eigenkets and Position Measurements
- 3Translation
- 4Momentum as a Generator of Translation
- 5The Canonical Commutation Relations
- 1.7Wave Functions in Position and Momentum Space
- 1Position-Space Wave Function
- 2Momentum Operator in the Position Basis
- 3Momentum-Space Wave Function
- 4Gaussian Wave Packets
- 5Generalization to Three Dimensions
2Quantum Dynamics
- 2.1Time Evolution and the Schrödinger Equation
- 1Time-Evolution Operator
- 2The Schrödinger Equation
- 3Energy Eigenkets
- 4Time Dependence of Expectation Values
- 5Spin Precession
- 6Neutrino Oscillations
- 7Correlation Amplitude and the Energy-Time Uncertainty Relation
- 2.2The Schrödinger Versus the Heisenberg Picture
- 1Unitary Operators
- 2State Kets and Observables in the Schrödinger and the Heisenberg Pictures
- 3The Heisenberg Equation of Motion
- 4Free Particles: Ehrenfest’s Theorem
- 5Base Kets and Transition Amplitudes
- 2.3Simple Harmonic Oscillator
- 1Energy Eigenkets and Energy Eigenvalues
- 2Time Development of the Oscillator
- 2.4Schrödinger’s Wave Equation
- 1Time-Dependent Wave Equation
- 2The Time-Independent Wave Equation
- 3Interpretations of the Wave Function
- 4The Classical Limit
- 2.5Elementary Solutions to Schrödinger’s Wave Equation
- 1Free Particle in Three Dimensions
- 2The Simple Harmonic Oscillator
- 3The Linear Potential
- 4The WKB (Semiclassical) Approximation
- 2.6Propagators and Feynman Path Integrals
- 1Propagators in Wave Mechanics
- 2Propagator as a Transition Amplitude
- 3Path Integrals as the Sum over Paths
- 4Feynman’s Formulation
- 2.7Potentials and Gauge Transformations
- 1Constant Potentials
- 2Gravity in Quantum Mechanics
- 3Gauge Transformations in Electromagnetism
- 4The Aharonov–Bohm Effect
- 5Magnetic Monopole
3Theory of Angular Momentum
- 3.1Rotations and Angular Momentum Commutation Relations
- 1Finite Versus Infinitesimal Rotations
- 2Infinitesimal Rotations in Quantum Mechanics
- 3Finite Rotations in Quantum Mechanics
- 4Commutation Relations for Angular Momentum
- 3.2Spin ½ Systems and Finite Rotations
- 1Rotation Operator for Spin ½
- 2Spin Precession Revisited
- 3Neutron Interferometry Experiment to Study 2π Rotations
- 4Pauli Two-Component Formalism
- 5Rotations in the Two-Component Formalism
- 3.3SO(3), SU(2), and Euler Rotations
- 1Orthogonal Group
- 2Unitary Unimodular Group
- 3Euler Rotations
- 3.4Density Operators and Pure Versus Mixed Ensembles
- 1Polarized Versus Unpolarized Beams
- 2Ensemble Averages and Density Operator
- 3Time Evolution of Ensembles
- 4Continuum Generalizations
- 5Quantum Statistical Mechanics
- 3.5Eigenvalues and Eigenstates of Angular Momentum
- 1Commutation Relations and the Ladder Operators
- 2Eigenvalues of J² and Jz
- 3Matrix Elements of Angular-Momentum Operators
- 4Representations of the Rotation Operator
- 3.6Orbital Angular Momentum
- 1Orbital Angular Momentum as Rotation Generator
- 2Spherical Harmonics
- 3Spherical Harmonics as Rotation Matrices
- 3.7Schrödinger’s Equation for Central Potentials
- 1The Radial Equation
- 2The Free Particle and Infinite Spherical Well
- 3The Isotropic Harmonic Oscillator
- 4The Coulomb Potential
- 3.8Addition of Angular Momenta
- 1Simple Examples of Angular-Momentum Addition
- 2Formal Theory of Angular-Momentum Addition
- 3Recursion Relations for the Clebsch–Gordan Coefficients
- 4Clebsch–Gordan Coefficients and Rotation Matrices
- 3.9Schwinger’s Oscillator Model of Angular Momentum
- 1Angular Momentum and Uncoupled Oscillators
- 2Explicit Formula for Rotation Matrices
- 3.10Spin Correlation Measurements and Bell’s Inequality
- 1Correlations in Spin-Singlet States
- 2Einstein’s Locality Principle and Bell’s Inequality
- 3Quantum Mechanics and Bell’s Inequality
- 3.11Tensor Operators
- 1Vector Operator
- 2Cartesian Tensors Versus Irreducible Tensors
- 3Product of Tensors
- 4Matrix Elements of Tensor Operators; the Wigner–Eckart Theorem
4Symmetry in Quantum Mechanics
- 4.1Symmetries, Conservation Laws, and Degeneracies
- 1Symmetries in Classical Physics
- 2Symmetry in Quantum Mechanics
- 3Degeneracies
- 4SO(4) Symmetry in the Coulomb Potential
- 4.2Discrete Symmetries, Parity, or Space Inversion
- 1Wave Functions under Parity
- 2Symmetrical Double-Well Potential
- 3Parity-Selection Rule
- 4Parity Nonconservation
- 4.3Lattice Translation as a Discrete Symmetry
- 4.4The Time-Reversal Discrete Symmetry
- 1Digression on Symmetry Operations
- 2Time-Reversal Operator
- 3Wave Function
- 4Time Reversal for a Spin ½ System
- 5Interactions with Electric and Magnetic Fields; Kramers Degeneracy
5Approximation Methods
- 5.1Time-Independent Perturbation Theory: Nondegenerate Case
- 1Statement of the Problem
- 2The Two-State Problem
- 3Formal Development of Perturbation Expansion
- 4Wave Function Renormalization
- 5Elementary Examples
- 5.2Time-Independent Perturbation Theory: The Degenerate Case
- 1Linear Stark Effect
- 5.3Hydrogenlike Atoms: Fine Structure and the Zeeman Effect
- 1The Relativistic Correction to the Kinetic Energy
- 2Spin-Orbit Interaction and Fine Structure
- 3The Zeeman Effect
- 4Van der Waals’ Interaction
- 5.4Variational Methods
- 5.5Time-Dependent Potentials: The Interaction Picture
- 1Statement of the Problem
- 2The Interaction Picture
- 3Time-Dependent Two-State Problems: Nuclear Magnetic Resonance, Masers, and So Forth
- 4Spin Magnetic Resonance
- 5Maser
- 5.6Hamiltonians with Extreme Time Dependence
- 1Sudden Approximation
- 2Adiabatic Approximation
- 3Berry’s Phase
- 4Example: Berry’s Phase for Spin ½
- 5Aharonov–Bohm and Magnetic Monopoles Revisited
- 5.7Time-Dependent Perturbation Theory
- 1Dyson Series
- 2Transition Probability
- 3Constant Perturbation
- 4Harmonic Perturbation
- 5.8Applications to Interactions with the Classical Radiation Field
- 1Absorption and Stimulated Emission
- 2Electric Dipole Approximation
- 3Photoelectric Effect
- 4Spontaneous Emission
- 5.9Energy Shift and Decay Width
6Scattering Theory
- 6.1Scattering as a Time-Dependent Perturbation
- 1Transition Rates and Cross Sections
- 2Solving for the T Matrix
- 3Scattering from the Future to the Past
- 6.2The Scattering Amplitude
- 1Wave Packet Description
- 2The Optical Theorem
- 6.3The Born Approximation
- 1The Higher-Order Born Approximation
- 6.4Phase Shifts and Partial Waves
- 1Free-Particle States
- 2Partial-Wave Expansion
- 3Unitarity and Phase Shifts
- 4Determination of Phase Shifts
- 5Hard-Sphere Scattering
- 6.5Eikonal Approximation
- 1Partial Waves and the Eikonal Approximation
- 6.6Low-Energy Scattering and Bound States
- 1Rectangular Well or Barrier
- 2Zero-Energy Scattering and Bound States
- 3Bound States as Poles of Sl(k)
- 6.7Resonance Scattering
- 6.8Symmetry Considerations in Scattering
- 6.9Inelastic Electron-Atom Scattering
- 1Nuclear Form Factor
7Identical Particles
- 7.1Permutation Symmetry
- 7.2Symmetrization Postulate
- 7.3Two-Electron System
- 7.4The Helium Atom
- 7.5Multiparticle States
- 7.6Density Functional Theory
- 1The Energy Functional for a Single Particle
- 2The Hohenberg–Kohn Theorem
- 3The Kohn–Sham Equations
- 4Models of the Exchange-Correlation Energy
- 5Application to the Helium Atom
- 7.7Quantum Fields
- 1Second Quantization
- 2Dynamical Variables in Second Quantization
- 3Example: The Degenerate Electron Gas
- 7.8Quantization of the Electromagnetic Field
- 1Maxwell’s Equations in Free Space
- 2Photons and Energy Quantization
- 3The Casimir Effect
- 4Concluding Remarks
8Relativistic Quantum Mechanics
- 8.1Paths to Relativistic Quantum Mechanics
- 1Natural Units
- 2The Energy of a Free Relativistic Particle
- 3The Klein–Gordon Equation
- 4An Interpretation of Negative Energies
- 5The Klein–Gordon Field
- 6Summary: The Klein–Gordon Equation and the Scalar Field
- 8.2The Dirac Equation
- 1The Conserved Current
- 2Free-Particle Solutions
- 3Interpretation of Negative Energies
- 4Electromagnetic Interactions
- 8.3Symmetries of the Dirac Equation
- 1Angular Momentum
- 2Parity
- 3Charge Conjugation
- 4Time Reversal
- 5CPT
- 8.4Solving with a Central Potential
- 1The One-Electron Atom
- 8.5Relativistic Quantum Field Theory
부록 A~FElectromagnetic Units · Elementary Solutions to Schrödinger’s Wave Equation · Hamiltonian for a Charge in an Electromagnetic Field · Proof of the Angular-Momentum Rule (3.358) · Finding Clebsch–Gordan Coefficients · Notes on Complex Variables
Cambridge 인쇄 목차 전문. 이 목차에는 쪽수가 실려 있지 않아 쪽수 칸을 비웠다. 들여쓴 소절의 번호는 셋째 자리만 적었다(§1.4.5 → 5). 대학원 수준이고 디랙 표기와 대칭성 취급이 Griffiths보다 형식적이다. 반도체와 닿는 곳은 §4.3 격자 병진 대칭(블로흐 정리의 군론적 뿌리)과 §7.6~7.7(밀도범함수론 · 양자장과 축퇴 전자 기체).
6부 · 통계역학
Thermal Physics
6부Charles Kittel · Herbert Kroemer · 2nd ed. · W. H. Freeman, 1980 원본 대조
인쇄 목차와 각 장 첫 쪽의 절 목록을 대조해 전문을 옮겼다. 절에 번호가 없는 책이라 번호 칸은 가운뎃점으로 두었고, 들여쓴 항목이 바로 위 대문자 절의 하위다. 장 끝의 SUMMARY·PROBLEMS는 옮기지 않았다. 13장이 통째로 반도체 통계(pp. 353–388) — 열물리 교재로는 이례적이며 공저자 Kroemer(헤테로구조 노벨상)의 흔적이다. 통계역학을 먼저, 열역학을 나중에 배치하는 구성이라 복사(4장)가 화학퍼텐셜보다 앞에 온다.
Fundamentals of Statistical and Thermal Physics
6부F. Reif · McGraw-Hill, 1965 · Waveland Press 재간행 원본 대조
Waveland Press 재간행본의 인쇄 목차를 절·쪽수까지 그대로 옮겼다. ✱ 표시는 저자가 붙인 것으로, 처음 읽을 때 건너뛰어도 되는 절이다. 절 번호를 가운뎃점(1·1)으로 찍고 절 제목이 문장형 대소문자라 인용할 때 원문 표기를 그대로 쓸 것. 이전에 8장을 “…and Chemical Species”, 12장을 “Elementary Theory of Transport Processes”로 적어 두었으나 인쇄 목차는 각각 or chemical species, Elementary kinetic theory of…다. 12~14장의 수송 이론이 7.11(볼츠만 방정식)의 보조 참고다. 부록 뒤로 Numerical constants(629) · Bibliography(631) · Answers to selected problems(637) · Index(643)가 온다.
II
물질과 재료
7부 · 고체물리
Introduction to Solid State Physics
7부Charles Kittel · 8th ed. · Wiley, 2005 · ISBN 0-471-41526-X 원본 대조
인쇄 목차를 절·쪽수까지 그대로 옮겼다. Kittel은 절에 번호를 붙이지 않는다 — 절 제목과 쪽수만 나열되므로 인용할 때는 “Kittel Ch.8, Effective Mass (p.197)”처럼 적어야 한다. 목차에서 한 칸 들여쓴 하위 항목은 여기서 상위 항목 뒤에 ·로 이어 붙였다. 볼츠만 수송 방정식이 본문이 아니라 부록 F(656)에 있다 — 수송을 다루는 장을 찾다 헤매기 쉬운 지점이다.
Solid State Physics
7부Neil W. Ashcroft · N. David Mermin · Holt, Rinehart and Winston, 1976 · ISBN 0-03-083993-9 장 수준 확보
1The Drude Theory of Metals1
2The Sommerfeld Theory of Metals29
3Failures of the Free Electron Model57
4Crystal Lattices63
5The Reciprocal Lattice85
6Determination of Crystal Structures by X-Ray Diffraction95
7Classification of Bravais Lattices and Crystal Structures111
8Electron Levels in a Periodic Potential: General Properties131
9Electrons in a Weak Periodic Potential151
10The Tight-Binding Method175
11Other Methods for Calculating Band Structure191
12The Semiclassical Model of Electron Dynamics213
13The Semiclassical Theory of Conduction in Metals243
14Measuring the Fermi Surface263
15Band Structure of Selected Metals283
16Beyond the Relaxation-Time Approximation313
17Beyond the Independent Electron Approximation329
18Surface Effects353
19Classification of Solids373
20Cohesive Energy395
21Failures of the Static Lattice Model415
22Classical Theory of the Harmonic Crystal421
23Quantum Theory of the Harmonic Crystal451
24Measuring Phonon Dispersion Relations469
25Anharmonic Effects in Crystals487
26Phonons in Metals511
27Dielectric Properties of Insulators533
28Homogeneous Semiconductors561
29Inhomogeneous Semiconductors589
30Defects in Crystals615
31Diamagnetism and Paramagnetism643
32Electron Interactions and Magnetic Structure671
33Magnetic Ordering693
34Superconductivity725
Appendices757
부록 ASummary of Important Numerical Relations in the Free Electron Theory of Metals757
부록 BThe Chemical Potential759
부록 CThe Sommerfeld Expansion760
부록 DPlane-Wave Expansions of Periodic Functions in More Than One Dimension762
부록 EThe Velocity and Effective Mass of Bloch Electrons765
부록 FSome Identities Related to Fourier Analysis of Periodic Systems767
부록 GThe Variational Principle for Schrödinger's Equation769
부록 HHamiltonian Formulation of the Semiclassical Equations of Motion, and Liouville's Theorem771
부록 IGreen's Theorem for Periodic Functions772
부록 JConditions for the Absence of Interband Transitions in Uniform Electric or Magnetic Fields773
부록 KOptical Properties of Solids776
부록 LQuantum Theory of the Harmonic Crystal780
부록 MConservation of Crystal Momentum784
부록 NTheory of the Scattering of Neutrons by a Crystal790
부록 OAnharmonic Terms and n-Phonon Processes796
부록 PEvaluation of the Landé g-Factor797
인쇄 목차(pp. xi–xiii)를 그대로 옮겼다. 이 책은 본문 절에 번호를 붙이지 않고 목차도 장까지만 싣는다 — Kittel과 같은 사정이라 장 수준 확보로 두었고, 인용은 “Ashcroft·Mermin Ch.13 (p.243–262)”처럼 장 단위로 적는다. 쪽 범위는 다음 장 시작쪽에서 유도되므로 정확도는 떨어지지 않는다. 7부 15장 128절을 Kittel 한 권이 받치고 있던 자리에 들어간다 — 13장(준고전 수송)과 16장(완화시간 근사를 넘어)이 7.12 수송 이론의 정면 근거이고, 12장(준고전 모형)·14장(페르미 면 측정)·17장(독립 전자 근사를 넘어)이 Kittel보다 깊다. 28·29장(균일·불균일 반도체)은 11·12부와 겹치므로 중복 서술을 피할 것. 부록 A~P(757~798)는 본문 유도의 상세판이고 그중 부록 K(고체의 광학적 성질)·L·N이 7.11·7.4에 붙는다.
8부 · 재료과학
Materials Science and Engineering: An Introduction
8부Callister · Rethwisch · 10th ed. · Wiley, 2018 · ISBN 978-1-119-40549-8 원본 대조
인쇄 목차를 절·쪽수까지 그대로 옮겼다(전 22장 284개 절). 이전에 15·16·17·20장을 절 범위로 묶어 두었던 것을 풀었고, 부록을 A~H로 잘못 적어 둔 것을 A~E로 바로잡았다. 22장 제목은 인쇄 목차에 “Environmental, and Societal Issues…”로 찍혀 있다 — 앞머리 “Economic,”이 빠진 목차 오식으로 보이니, 인용하기 전에 본문 장 제목을 확인할 것. 반도체와 직접 닿는 곳은 5.6(반도체 내 확산)과 18.10~18.15(진성·외인성 반도체, 캐리어 이동도, 홀 효과, 소자)이고, 3D 프린팅 절이 세 곳(11.7 · 13.15 · 15.26)에 흩어져 있다. 각 장은 Summary · Equation Summary · List of Symbols · Important Terms and Concepts · References로 끝난다.
Phase Transformations in Metals and Alloys
8부Porter · Easterling · Sherif · 4th ed. · CRC Press, 2021 · ISBN 978-0-367-43034-4 원본 대조
4판(CRC Press, 2021)으로 교체했다 — 이전에는 3판(2009) 목차였다. 인쇄 목차를 소절(x.y.z.w)과 쪽수까지 그대로 옮겼다. 3판과 절 번호가 어긋나는 곳이 많다: 3장에 3.3 Solid/Liquid Interfaces가 들어오면서 이후 절이 한 칸씩 밀렸고, 3판 §1.9 Computation of Phase Diagrams가 사라져 1.9가 The Kinetics of Phase Transformations로 당겨졌으며, 6장은 Diffusionless Martensitic Transformations로 제목까지 바뀌어 전면 개편됐다. 인쇄 목차에 번호 오식이 두 군데 있다 — 1.7.3이어야 할 “Full and Partial Equilibrium”이 1.7.1로 중복되어 있고, 6.11이어야 할 “Summary of Main Points”가 6.10으로 중복되어 있다(여기서는 인쇄된 대로 두었다). 각 장은 Exercises · References · Further Reading으로 끝난다.
Computational Thermodynamics: The Calphad Method
8부Hans Lukas · Suzana G. Fries · Bo Sundman · Cambridge University Press, 2007 · ISBN 978-0-521-86811-2 원본 대조
1Introduction1
- 1.1Computational thermodynamics1
- 1.2The past and present, the Calphad technique3
- 1.3The future development of databases and software applications4
- 1.4The structure of the book5
2Basis7
- 2.1Thermodynamics7
- 2.2Crystallography17
- 2.3Equilibrium calculations23
- 2.4Optimization methods42
- 2.5Final remarks45
3First principles and thermodynamic properties47
- 3.1The density-functional theory (DFT) and its approximations48
- 3.2The DFT results at 0 K50
- 3.3Going to higher temperatures, adding the statistics53
- 3.4Final remarks57
4Experimental data used for optimization58
- 4.1Thermodynamic data58
- 4.2Binary phase-diagram data68
- 4.3Ternary phase-diagram data72
- 4.4Multicomponent and other types of experimental data75
- 4.5X-ray and neutron diffraction76
- 4.6Mössbauer spectroscopy and perturbed angular-correlation measurements76
- 4.7Final remarks76
5Models for the Gibbs energy79
- 5.1The general form of the Gibbs-energy model80
- 5.2Phases with fixed composition81
- 5.3Variables for composition dependence87
- 5.4Modeling particular physical phenomena91
- 5.5Models for the Gibbs energy of solutions94
- 5.6Models for the excess Gibbs energy103
- 5.7Modeling using additional constituents114
- 5.8Modeling using sublattices122
- 5.9Models for liquids146
- 5.10Chemical reactions and thermodynamic models155
- 5.11Final remarks157
6Assessment methodology161
- 6.1Starting the assessment161
- 6.2Modeling the Gibbs energy for each phase167
- 6.3Determining adjustable parameters192
- 6.4Decisions to be made during the assessment195
- 6.5Checking results of an optimization198
- 6.6Publishing an assessed system200
- 6.7How the experts do assessment200
7Optimization tools203
- 7.1Common features203
- 7.2How to use BINGSS206
- 7.3The PARROT module of Thermo-Calc219
- 7.4Final remarks240
8Creating thermodynamic databases243
- 8.1Unary data244
- 8.2Model compatibility244
- 8.3Experimental databases245
- 8.4Naming of phases246
- 8.5From assessments to databases249
- 8.6Database management and updating252
- 8.7Existing thermodynamic databases253
- 8.8Mobility databases253
- 8.9Nano-materials254
- 8.10Examples using databases256
9Case studies264
- 9.1A complete assessment of the Cu–Mg system264
- 9.2Checking metastable diagrams: the Ag–Al system274
- 9.3The Re–W σ phase refit using first-principles data276
- 9.4A complete binary system: Ca–Mg279
- 9.5Modeling the γ–γ′ phases: the Al–Ni system285
- 9.6Assessment of a ternary oxide system287
- 9.7Some notes on a ternary assessment, the Cr–Fe–Ni system293
부록Websites297
References299
인쇄 목차를 절·쪽수까지 그대로 옮겼다(9개 장 + 부록). 소절(x.y.z)은 싣지 않았다. 목차 PDF의 글리프 흔적을 바로잡았다 — “/UPsigma”는 σ, “/UPgamma”는 γ다. 8.4 상태도 계산(CALPHAD) 한 절이 전사된 59권 어디에도 대응하는 장·절이 없어 들인 책이다 — 2장(열역학·결정학·평형 계산·최적화)과 5장(깁스 에너지 모델 11절: 부격자·용액·과잉 깁스 에너지·액체)이 그 절의 정면 근거이고, 6장(평가 방법론)·7장(BINGSS·Thermo-Calc PARROT)이 “상태도를 계산한다”가 실제로 무슨 작업인지 보여 준다. 3장은 제일원리(DFT) 계산을 열역학 데이터로 잇는 자리라 20부와도 닿고, 8.8 Mobility databases는 8.3(확산)의 확장이다. 9장 사례 일곱 편은 이원계·삼원계 평가를 처음부터 끝까지 따라가는 실습이다.
9부 · 표면·계면과 박막
Materials Science of Thin Films: Deposition and Structure
9부Milton Ohring · 2nd ed. · Academic Press, 2002 · ISBN 978-0-12-524975-1 원본 대조
1A Review of Materials Science1
- 1.1Introduction1
- 1.2Structure2
- 1.3Defects in Solids10
- 1.4Bonds and Bands in Materials14
- 1.5Thermodynamics of Materials24
- 1.6Kinetics36
- 1.7Nucleation44
- 1.8An Introduction to Mechanical Behavior47
- 1.9Conclusion52
2Vacuum Science and Technology57
- 2.1Introduction57
- 2.2Kinetic Theory of Gases58
- 2.3Gas Transport and Pumping63
- 2.4Vacuum Pumps70
- 2.5Vacuum Systems81
- 2.6Conclusion88
3Thin-Film Evaporation Processes95
- 3.1Introduction95
- 3.2The Physics and Chemistry of Evaporation97
- 3.3Film Thickness Uniformity and Purity106
- 3.4Evaporation Hardware118
- 3.5Evaporation Processes and Applications128
- 3.6Conclusion139
4Discharges, Plasmas, and Ion-Surface Interactions145
- 4.1Introduction145
- 4.2Plasmas, Discharges, and Arcs147
- 4.3Fundamentals of Plasma Physics152
- 4.4Reactions in Plasmas164
- 4.5Physics of Sputtering170
- 4.6Ion Bombardment Modification of Growing Films184
- 4.7Conclusion196
5Plasma and Ion Beam Processing of Thin Films203
- 5.1Introduction203
- 5.2DC, AC, and Reactive Sputtering Processes205
- 5.3Magnetron Sputtering222
- 5.4Plasma Etching233
- 5.5Hybrid and Modified PVD Processes252
- 5.6Conclusion269
6Chemical Vapor Deposition277
- 6.1Introduction277
- 6.2Reaction Types281
- 6.3Thermodynamics of CVD287
- 6.4Gas Transport293
- 6.5Film Growth Kinetics303
- 6.6Thermal CVD Processes312
- 6.7Plasma-Enhanced CVD Processes323
- 6.8Some CVD Materials Issues334
- 6.9Safety347
- 6.10Conclusion349
7Substrate Surfaces and Thin-Film Nucleation357
- 7.1Introduction357
- 7.2An Atomic View of Substrate Surfaces360
- 7.3Thermodynamic Aspects of Nucleation376
- 7.4Kinetic Processes in Nucleation and Growth386
- 7.5Experimental Studies of Nucleation and Growth400
- 7.6Conclusion409
8Epitaxy417
- 8.1Introduction417
- 8.2Manifestations of Epitaxy420
- 8.3Lattice Misfit and Defects in Epitaxial Films429
- 8.4Epitaxy of Compound Semiconductors439
- 8.5High-Temperature Methods for Depositing Epitaxial Semiconductor Films453
- 8.6Low-Temperature Methods for Depositing Epitaxial Semiconductor Films466
- 8.7Mechanisms and Characterization of Epitaxial Film Growth476
- 8.8Conclusion488
9Film Structure495
- 9.1Introduction495
- 9.2Structural Morphology of Deposited Films and Coatings497
- 9.3Computational Simulations of Film Structure510
- 9.4Grain Growth, Texture, and Microstructure Control in Thin Films520
- 9.5Constrained Film Structures533
- 9.6Amorphous Thin Films540
- 9.7Conclusion552
10Characterization of Thin Films and Surfaces559
- 10.1Introduction559
- 10.2Film Thickness562
- 10.3Structural Characterization of Films and Surfaces583
- 10.4Chemical Characterization of Surfaces and Films606
- 10.5Conclusion633
11Interdiffusion, Reactions, and Transformations in Thin Films641
- 11.1Introduction641
- 11.2Fundamentals of Diffusion643
- 11.3Interdiffusion in Thin Metal Films659
- 11.4Compound Formation and Phase Transformations in Thin Films669
- 11.5Metal–Semiconductor Reactions682
- 11.6Mass Transport in Thin Films under Large Driving Forces695
- 11.7Conclusion704
12Mechanical Properties of Thin Films711
- 12.1Introduction711
- 12.2Mechanical Testing and Strength of Thin Films713
- 12.3Analysis of Internal Stress723
- 12.4Techniques for Measuring Internal Stress in Films735
- 12.5Internal Stresses in Thin Films and Their Causes742
- 12.6Mechanical Relaxation Effects in Stressed Films754
- 12.7Adhesion764
- 12.8Conclusion775
인쇄 목차를 절·쪽수까지 그대로 옮겼다. 소절(x.y.z)은 인쇄 목차에 실리지 않아 없다. 모든 장이 Conclusion · Exercises · References로 끝난다. Ch.9(구조 조닝 모델·집합조직), Ch.11(실리사이드 형성·일렉트로마이그레이션), Ch.12(박막 응력·접착)가 Campbell·Plummer가 비워두는 부분을 메운다.
Physical Chemistry of Surfaces
9부Arthur W. Adamson · Alice P. Gast · 6th ed. · Wiley-Interscience, 1997 · ISBN 978-0-471-14873-9 원본 대조
IGeneral Introduction1
IICapillarity4
- 1Surface Tension and Surface Free Energy4
- 2The Young–Laplace Equation6
- 3Some Experiments with Soap Films8
- 4The Treatment of Capillary Rise10
- AIntroductory Discussion10
- BExact Solutions to the Capillary Rise Problem12
- CExperimental Aspects of the Capillary Rise Method16
- 5The Maximum Bubble Pressure Method17
- 6Detachment Methods19
- AThe Drop Weight Method19
- BThe Ring Method21
- CWilhelmy Slide Method23
- 7Methods Based on the Shape of Static Drops or Bubbles26
- APendant Drop Method27
- BSessile Drop or Bubble Method27
- CSources of Other Deformed Shapes30
- 8Dynamic Methods of Measuring Surface Tension33
- AFlow Methods33
- BCapillary Waves34
- CMaximum Bubble Pressure Method35
- 9Surface Tension Values as Obtained by Different Methods35
IIIThe Nature and Thermodynamics of Liquid Interfaces48
- 1One-Component Systems48
- ASurface Thermodynamic Quantities for a Pure Substance48
- BThe Total Surface Energy, ES51
- CThe Effect of Curvature on Vapor Pressure and Surface Tension53
- DThe Effect of Pressure on Surface Tension55
- 2Structural and Theoretical Treatments of Liquid Interfaces56
- AFurther Development of the Thermodynamic Treatment of the Surface Region58
- BCalculation of the Surface Energy and Structure of Interfaces61
- 3Orientation at Interfaces63
- 4The Surface Tension of Solutions65
- ABinary Solutions65
- BThe Surface Tension of Polymeric Systems69
- 5Thermodynamics of Binary Systems: The Gibbs Equation71
- ADefinition of Surface Excess71
- BThe Gibbs Equation73
- CThe Dividing Surface74
- DOther Surface Thermodynamic Relationships76
- 6Determination of Surface Excess Quantities77
- AExperimental Methods77
- BHistorical Footnote and Commentary79
- CTheoretical Calculation of Surface Excess Quantities79
- 7Gibbs Monolayers80
- AThe Two-Dimensional Ideal-Gas Law82
- BNonideal Two-Dimensional Gases83
- CThe Osmotic Pressure Point of View86
- DSurface Elasticity89
- ETraube’s Rule90
- FSome Further Comments on Gibbs Monolayers91
IVSurface Films on Liquid Substrates101
- 1Introduction101
- 2The Spreading of One Liquid on Another104
- ACriteria for Spreading104
- BEmpirical and Theoretical Treatments107
- CKinetics of Spreading Processes110
- DThe Marangoni Effect111
- ELenses–Line Tension112
- 3Experimental Techniques for the Study of Monomolecular Films113
- AMeasurement of π114
- BSurface Potentials116
- CMeasurement of Surface Viscosity118
- DOptical Properties of Monolayers126
- EMicroscopic Evaluation of Monolayers128
- FDiffraction Studies130
- 4States of Monomolecular Films131
- AGaseous Films131
- BGas–Liquid Transitions132
- CCondensed Phases133
- DThe Solid State135
- EMonolayer Collapse136
- FDomain Shapes and Interactions136
- 5Mixed Films140
- 6Evaporation Rates through Monomolecular Films146
- 7Dissolution of Monolayers148
- 8Reactions in Monomolecular Films151
- AKinetics of Reactions in Films151
- BKinetics of Formation and Hydrolysis of Esters152
- COther Chemical Reactions155
VElectrical Aspects of Surface Chemistry169
- 1Introduction169
- 2The Electrical Double Layer169
- 3The Stern Layer175
- 4The Free Energy of a Diffuse Double Layer179
- 5Repulsion between Two Planar Double Layers180
- 6The Zeta Potential183
- AElectrophoresis183
- BElectroosmosis185
- CStreaming Potential187
- DSedimentation Potential188
- EInterrelationships in Electrokinetic Phenomena188
- FPotential, Surface Charge, and Colloidal Stability189
- 7Electrocapillarity192
- AThermodynamics of the Electrocapillary Effect195
- BExperimental Methods197
- CResults for the Mercury–Aqueous Solution Interface199
- DEffect of Uncharged Solutes and Changes of Solvent200
- EOther Electrocapillary Systems202
- 8The Electrified Solid–Liquid Interface202
- AElectrode–Solution Interface203
- BElectrochemistry in Dispersed Phases204
- CPhotoelectrochemistry; Solar Energy Conversion204
- 9Types of Potentials and the Meaning of Potential Difference When Two Phases Are Involved205
- AThe Various Types of Potentials205
- BVolta Potentials, Surface Potential Differences, and the Thermionic Work Function208
- CElectrode Potentials209
- DIrreversible Electrode Phenomena212
VILong-Range Forces225
- 1Introduction225
- 2Forces between Atoms and Molecules226
- 3Long-Range Forces232
- AThe Microscopic Approach232
- BThe Retarded Dispersion Interaction234
- CExperimental Measurements236
- 4Long-Range Forces in Solution239
- ADispersion Forces in Condensed Media240
- BElectric Double-Layer Repulsion240
- CForces Due to Solvent Structure243
- DThin-Film Viscosity246
- 5Forces in Biological Systems246
- 6The Disjoining Pressure247
- 7Anomalous Water248
- 8Dipole-Induced Dipole Propagation248
VIISurfaces of Solids257
- 1Introduction257
- AThe Surface Mobility of Solids257
- BEffect of Processing on the Condition of Solid Surfaces259
- 2Thermodynamics of Crystals259
- ASurface Tension and Surface Free Energy259
- BThe Equilibrium Shape of a Crystal261
- CThe Kelvin Equation262
- 3Theoretical Estimates of Surface Energies and Free Energies263
- ACovalently Bonded Crystals263
- BRare-Gas Crystals264
- CIonic Crystals267
- DMolecular Crystals269
- EMetals269
- 4Factors Affecting the Surface Energies and Surface Tensions of Actual Crystals271
- AState of Subdivision271
- BDeviations from Ideality271
- CFractal Surfaces272
- DDislocations275
- 5Experimental Estimates of Surface Energies and Free Energies278
- AMethods Depending on the Direct Manifestation of Surface Tensional Forces278
- BSurface Energies from Heats of Solution280
- CRelative Surface Tensions from Equilibrium Crystal Shapes280
- DDependence of Other Physical Properties on Surface Energy Changes at a Solid Interface281
- 6Reactions of Solid Surfaces282
VIIISurfaces of Solids: Microscopy and Spectroscopy293
- 1Introduction293
- 2The Microscopy of Surfaces293
- AOptical and Electron Microscopy293
- BScanning Probe Microscopies294
- CField Emission and Field Ion Microscopies299
- DLow-Energy Electron Diffraction (LEED)302
- 3Spectroscopic Methods306
- AAuger Electron Spectroscopy (AES)306
- BPhotoelectron Spectroscopy (XPS, ESCA)308
- CIon Scattering (ISS, LEIS)308
- 4Other Techniques311
IXThe Formation of a New Phase—Nucleation and Crystal Growth328
- 1Introduction328
- 2Classic Nucleation Theory329
- 3Experimental Nucleation Studies336
- AOne-Component Systems336
- BBinary Systems and Solutions338
- 4Crystal Growth339
- 5Epitaxial Growth and Surface Nucleation341
XThe Solid–Liquid Interface—Contact Angle347
- 1Introduction347
- 2Surface Energies from Solubility Changes347
- 3Surface Energies from Immersion, Adsorption, and Engulfment Studies348
- AEnthalpy of Immersion348
- BSurface Energy and Free Energy Changes from Adsorption Studies350
- CEngulfment352
- 4Contact Angle352
- AYoung’s Equation352
- 5Contact Angle Hysteresis355
- AHeterogeneous Surfaces355
- BSurface Roughness358
- CLiquid–Surface Interactions: Surface Changes and Autophobicity359
- DDynamic Contact Angles361
- 6Experimental Methods and Measurements of Contact Angle362
- AExperimental Methods to Measure Contact Angle362
- BResults of Contact Angle Measurements364
- 7Theories of Contact Angle Phenomena372
- AThermodynamics of the Young Equation372
- BSemiempirical Models: The Girifalco–Good–Fowkes–Young Equation375
- CPotential–Distortion Model377
- DThe Microscopic Meniscus Profile378
XIThe Solid–Liquid Interface—Adsorption from Solution390
- 1Adsorption of Nonelectrolytes from Dilute Solution390
- AIsotherms391
- BSelf-Assembling Monolayers394
- CMultilayer Adsorption397
- 2Polymer Adsorption398
- 3Irreversible Adsorption404
- 4Surface Area Determination405
- 5Adsorption in Binary Liquid Systems406
- AAdsorption at the Solid–Solution Interface406
- BHeat of Adsorption at the Solid–Solution Interface411
- 6Adsorption of Electrolytes412
- AStern Layer Adsorption412
- BSurfactant Adsorption414
- CCounterion Adsorption–Ion Exchange416
- 7Photophysics and Photochemistry of the Adsorbed State418
- APhotophysics of Adsorbed Species418
- BPhotochemistry at the Solid–Solution Interface419
XIIFriction, Lubrication, and Adhesion431
- 1Introduction431
- 2Friction between Unlubricated Surfaces431
- AAmontons’ Law431
- BNature of the Contact between Two Solid Surfaces432
- CRole of Shearing and Plowing—Explanation of Amontons’ Law434
- DStatic and Stick–Slip Friction436
- ERolling Friction437
- 3Two Special Cases of Friction437
- AUse of Skid Marks to Estimate Vehicle Speeds437
- BIce and Snow438
- 4Metallic Friction—Effect of Oxide Films439
- 5Friction between Nonmetals440
- ARelatively Isotropic Crystals440
- BLayer Crystals440
- CPolymers441
- 6Some Further Aspects of Friction442
- 7Friction between Lubricated Surfaces443
- ABoundary Lubrication443
- BThe Mechanism of Boundary Lubrication447
- CForces and Friction between Smooth Surfaces450
- 8Adhesion452
- AIdeal Adhesion452
- BPolymer Adhesion455
- CPractical Adhesion455
XIIIWetting, Flotation, and Detergency465
- 1Introduction465
- 2Wetting465
- AWetting as a Contact Angle Phenomenon465
- BWetting as a Capillary Action Phenomenon469
- 3Water Repellency470
- 4Flotation471
- AThe Role of Contact Angle in Flotation473
- BFlotation of Metallic Minerals476
- CFlotation of Nonmetallic Minerals478
- 5Properties of Association Colloids—Micelles479
- 6Detergency484
- AGeneral Aspects of Soil Removal484
- BFactors in Detergent Action486
- CAdsorption of Detergents on Fabrics487
- DDetergents in Commercial Use488
XIVEmulsions, Foams, and Aerosols500
- 1Introduction500
- 2Emulsions—General Properties501
- 3Factors Determining Emulsion Stabilization503
- AMacroscopic Theories of Emulsion Stabilization504
- BSpecific Chemical and Structural Effects505
- CLong-Range Forces as a Factor in Emulsion Stability506
- DStabilization of Emulsions by Solid Particles510
- 4The Aging and Inversion of Emulsions510
- AFlocculation and Coagulation Kinetics511
- BInversion and Breaking of Emulsions513
- 5The Hydrophile–Lipophile Balance513
- 6Microemulsions516
- 7Foam Structure519
- 8Foam Drainage521
- ADrainage of Single Films521
- BDrainage of Foams523
- 9Foam Stability524
- 10Aerosols525
XVMacromolecular Surface Films, Charged Films, and Langmuir–Blodgett Layers537
- 1Introduction537
- 2Langmuir Films of Polymers537
- AAdsorption and Phase Behavior537
- BDynamics and Rheology541
- 3Langmuir Films of Proteins542
- 4Films of Other Biological Substances544
- 5Membranes, Bilayers, and Vesicles548
- 6Films at Liquid–Liquid Interfaces and on Nonaqueous Liquid Surfaces551
- 7Charged Films553
- AEquation of State for Charged Films553
- BInfluence of Subphase pH on the State of Monomolecular Films557
- 8Langmuir–Blodgett Films557
- AStructure and Characterization of LB Films558
- BMixed LB Films and Films of Polymers and Colloids560
- CStudies of the LB Deposition Process562
XVIThe Solid–Gas Interface—General Considerations571
- 1Introduction571
- 2The Surface Area of Solids572
- AThe Meaning of Surface Area572
- BSurfaces as Having a Fractal Geometry574
- CMethods Requiring Knowledge of the Surface Free Energy or Total Energy576
- DRate of Dissolving577
- EThe Mercury Porosimeter577
- FOther Methods of Surface Area Determination580
- 3The Structure and Chemical Nature of Solid Surfaces581
- 4The Nature of the Solid–Adsorbate Complex582
- AEffect of Adsorption on Adsorbate Properties582
- BEffect of the Adsorbate on the Adsorbent589
- CThe Adsorbate–Adsorbent Bond591
XVIIAdsorption of Gases and Vapors on Solids599
- 1Introduction599
- 2The Adsorption Time601
- 3The Langmuir Adsorption Isotherm603
- AKinetic Derivation604
- BStatistical Thermodynamic Derivation606
- CAdsorption Entropies609
- DLateral Interaction613
- EExperimental Applications of the Langmuir Equation615
- 4Experimental Procedures615
- 5The BET and Related Isotherms617
- ADerivation of the BET Equation618
- BProperties of the BET Equation620
- CModifications of the BET Equation621
- 6Isotherms Based on the Equation of State of the Adsorbed Film622
- AFilm Pressure–Area Diagrams from Adsorption Isotherms623
- BAdsorption Isotherms from Two-Dimensional Equations of State623
- 7The Potential Theory625
- AThe Polanyi Treatment625
- BIsotherms Based on an Assumed Variation of Potential with Distance627
- CThe Polarization Model629
- 8Comparison of the Surface Areas from the Various Multilayer Models630
- 9The Characteristic Isotherm and Related Concepts631
- 10Chemical Physics of Submonolayer Adsorption634
- 11Phase Transformations in the Multilayer Region639
- 12Thermodynamics of Adsorption641
- ATheoretical Considerations641
- BExperimental Heats and Energies of Adsorption647
- 13Critical Comparison of the Various Models for Adsorption652
- AThe Langmuir–BET Model652
- BTwo-Dimensional Equation of State Treatments653
- CThe Potential Model654
- 14Physical Adsorption on Heterogeneous Surfaces655
- ADistribution of Site Energy Patches655
- BThermodynamics of Adsorption on Heterogeneous Surfaces659
- CPoint versus Patch Site Energy Distributions660
- DGeometric Heterogeneity660
- 15Rate of Adsorption661
- 16Adsorption on Porous Solids—Hysteresis662
- AMolecular Sieves662
- BCapillary Condensation664
- CMicropore Analysis669
XVIIIChemisorption and Catalysis685
- 1Introduction685
- 2Chemisorption: The Molecular View686
- ALEED Structures686
- BSurface Microscopies688
- CSpectroscopy of Chemisorbed Species689
- DWork Function and Related Measurements693
- EProgrammed Desorption694
- 3Chemisorption Isotherms698
- AVariable Heat of Adsorption698
- BEffect of Site and Adsorbate Coordination Number701
- CAdsorption Thermodynamics702
- 4Kinetics of Chemisorption703
- AActivation Energies703
- BRates of Adsorption705
- CRates of Desorption707
- 5Surface Mobility709
- 6The Chemisorption Bond712
- ASome General Aspects712
- BMetals715
- CSemiconductors717
- DAcid–Base Systems718
- 7Mechanisms of Heterogeneous Catalysis720
- AAdsorption or Desorption as the Rate-Determining Step720
- BReaction within the Adsorbed Film as the Rate-Determining Step722
- 8Influence of the Adsorption Isotherm on the Kinetics of Heterogeneous Catalysis724
- AUnimolecular Surface Reactions724
- BBimolecular Surface Reactions726
- 9Mechanisms of a Few Catalyzed Reactions728
- AAmmonia Synthesis729
- BFischer–Tropsch Reactions730
- CHydrogenation of Ethylene733
- DCatalytic Cracking of Hydrocarbons and Related Reactions734
- EOxidation of CO735
- FPhotochemical and Photoassisted Processes at Surfaces738
표면 화학의 고전. 인쇄 목차 원본으로 18개 장 전부를 절·소절·쪽수까지 확인했다. 장은 로마 숫자, 절은 아라비아 숫자, 소절은 알파벳이다. 9부에서 실제로 기대는 곳은 II장(표면장력·Young–Laplace·접촉각 측정법)·VII장(고체 표면 에너지)·X장(고–액 계면과 접촉각 히스테리시스)·XIII장(젖음성)·XVI~XVII장(표면적·Langmuir·BET 흡착 등온식)·XVIII장(화학흡착과 촉매)이다. 각 장 끝의 Problems·General References·Textual References는 싣지 않았다.
Physics at Surfaces
9부Andrew Zangwill · Cambridge University Press, 1988 · ISBN 978-0-521-34752-5 장 수준 확보
0Historical sketch1
Part 1 — Clean surfaces5
1Thermodynamics7
2Chemical analysis20
3Crystal structure28
4Electronic structure54
5Phase transitions110
6Elementary excitations138
7Optical properties163
Part 2 — Adsorption183
8Physisorption185
9Chemisorption204
10Crystal structure232
11Phase transitions257
12Electronic structure292
13Energy transfer328
14Kinetics and dynamics360
15Surface reactions400
16Epitaxy421
References433
9부에 표면물리를 정면으로 다루는 교재가 없어(Ohring은 박막 공정, Adamson은 콜로이드 화학) 들였다. 확보한 것이 케임브리지 온라인 목차라 장까지만 실려 있다 — 절 제목·쪽수가 없어 장 수준 확보로 두고, 인용은 “Zangwill Ch.5 (p.110–137)”처럼 장 단위로 적는다. 청정 표면(1~7장)과 흡착(8~16장)이 같은 주제를 두 번 도는 구성이라 3장·10장(결정 구조), 4장·12장(전자 구조), 5장·11장(상전이)이 짝을 이룬다. 9.1(표면의 구조)은 3장, 9.5(표면 전자 구조)는 4장, 9.6(표면 여기와 광학적 성질)은 6·7장(표면 플라스몬·포논, 표면 광학), 9.7(표면과 흡착층의 상전이)은 5·11장이 근거다. 16장 Epitaxy는 9.9와, 2장 Chemical analysis는 9.13(표면 분석)과 겹친다. 마지막 장을 인용할 때는 References(433)가 끝쪽 경계가 된다.
10부 · 나노소재공학
Nanostructures and Nanomaterials: Synthesis, Properties and Applications
10부Guozhong Cao · 1st ed. · Imperial College Press, 2004 · ISBN 1-86094-415-9 원본 대조
판을 1판으로 바로잡았다. 이 항목은 2판(Cao·Wang, World Scientific, 2011) 서지로 적혀 있었으나 확보한 인쇄 목차 원본이 1판이라 1판 기준으로 교체했다 — 판이 바뀌면 절 번호와 쪽수가 모두 달라지므로 인용은 1판으로 고정한다. 9개 장 전부를 4단계(x.y.z.w)까지 확인했다. 10부의 뼈대는 3~5장(0·1·2차원 나노구조)이고, 5.4~5.6(PVD·CVD·ALD)과 7.2(리소그래피)는 18부 공정과 겹치므로 중복 서술을 피할 것. 2장은 9부(표면·계면)의 보조 근거다.
Introduction to Nanotechnology
10부Charles P. Poole Jr. · Frank J. Owens · Wiley-Interscience, 2003 · ISBN 0-471-07935-9 원본 대조
인쇄 목차 원본으로 13개 장과 부록 A·B를 소절·쪽수까지 확인했다. 이전에 괄호로 묶어 뭉뚱그렸던 소절을 원본 번호대로 풀었다. Ch.2·9는 Kittel(7부)과 상당 부분 겹치며, 고유하게 유용한 것은 Ch.5(탄소 나노구조)·Ch.7(나노 강자성·GMR)·Ch.13(MEMS/NEMS)이다.
Nanophysics and Nanotechnology
10부Edward L. Wolf · 2nd ed. · Wiley-VCH, 2006 · ISBN 3-527-40651-4 원본 대조
1Introduction1
- 1.1Nanometers, Micrometers, Millimeters3
- 1.2Moore’s Law7
- 1.3Esaki’s Quantum Tunneling Diode8
- 1.4Quantum Dots of Many Colors9
- 1.5GMR 100 Gb Hard Drive “Read” Heads11
- 1.6Accelerometers in your Car13
- 1.7Nanopore Filters14
- 1.8Nanoscale Elements in Traditional Technologies14
2Systematics of Making Things Smaller, Pre-quantum17
- 2.1Mechanical Frequencies Increase in Small Systems17
- 2.2Scaling Relations Illustrated by a Simple Harmonic Oscillator20
- 2.3Scaling Relations Illustrated by Simple Circuit Elements21
- 2.4Thermal Time Constants and Temperature Differences Decrease22
- 2.5Viscous Forces Become Dominant for Small Particles in Fluid Media22
- 2.6Frictional Forces can Disappear in Symmetric Molecular Scale Systems24
3What are Limits to Smallness?27
- 3.1Particle (Quantum) Nature of Matter: Photons, Electrons, Atoms, Molecules27
- 3.2Biological Examples of Nanomotors and Nanodevices28
- 3.2.1Linear Spring Motors29
- 3.2.2Linear Engines on Tracks30
- 3.2.3Rotary Motors33
- 3.2.4Ion Channels, the Nanotransistors of Biology36
- 3.3How Small can you Make it?38
- 3.3.1What are the Methods for Making Small Objects?38
- 3.3.2How Can you See What you Want to Make?39
- 3.3.3How Can you Connect it to the Outside World?41
- 3.3.4If you Can’t See it or Connect to it, Can you Make it Self-assemble and Work on its Own?41
- 3.3.5Approaches to Assembly of Small Three-dimensional Objects41
- 3.3.6Use of DNA Strands in Guiding Self-assembly of Nanometer Size Structures45
4Quantum Nature of the Nanoworld49
- 4.1Bohr’s Model of the Nuclear Atom49
- 4.1.1Quantization of Angular Momentum50
- 4.1.2Extensions of Bohr’s Model51
- 4.2Particle-wave Nature of Light and Matter, DeBroglie Formulas λ = h/p, E = hν52
- 4.3Wavefunction Ψ for Electron, Probability Density Ψ*Ψ, Traveling and Standing Waves53
- 4.4Maxwell’s Equations; E and B as Wavefunctions for Photons, Optical Fiber Modes57
- 4.5The Heisenberg Uncertainty Principle58
- 4.6Schrodinger Equation, Quantum States and Energies, Barrier Tunneling59
- 4.6.1Schrodinger Equations in one Dimension60
- 4.6.2The Trapped Particle in one Dimension61
- 4.6.3Reflection and Tunneling at a Potential Step63
- 4.6.4Penetration of a Barrier, Escape Time from a Well, Resonant Tunneling Diode65
- 4.6.5Trapped Particles in Two and Three Dimensions: Quantum Dot66
- 4.6.62D Bands and Quantum Wires69
- 4.6.7The Simple Harmonic Oscillator70
- 4.6.8Schrodinger Equation in Spherical Polar Coordinates72
- 4.7The Hydrogen Atom, One-electron Atoms, Excitons72
- 4.7.1Magnetic Moments76
- 4.7.2Magnetization and Magnetic Susceptibility77
- 4.7.3Positronium and Excitons78
- 4.8Fermions, Bosons and Occupation Rules79
5Quantum Consequences for the Macroworld81
- 5.1Chemical Table of the Elements81
- 5.2Nano-symmetry, Di-atoms, and Ferromagnets82
- 5.2.1Indistinguishable Particles, and their Exchange82
- 5.2.2The Hydrogen Molecule, Di-hydrogen: the Covalent Bond84
- 5.3More Purely Nanophysical Forces: van der Waals, Casimir, and Hydrogen Bonding86
- 5.3.1The Polar and van der Waals Fluctuation Forces87
- 5.3.2The Casimir Force90
- 5.3.3The Hydrogen Bond94
- 5.4Metals as Boxes of Free Electrons: Fermi Level, DOS, Dimensionality95
- 5.4.1Electronic Conduction, Resistivity, Mean Free Path, Hall Effect, Magnetoresistance98
- 5.5Periodic Structures (e.g. Si, GaAs, InSb, Cu): Kronig–Penney Model for Electron Bands and Gaps100
- 5.6Electron Bands and Conduction in Semiconductors and Insulators; Localization vs. Delocalization105
- 5.7Hydrogenic Donors and Acceptors109
- 5.7.1Carrier Concentrations in Semiconductors, Metallic Doping110
- 5.7.2PN Junction, Electrical Diode I(V) Characteristic, Injection Laser114
- 5.8More about Ferromagnetism, the Nanophysical Basis of Disk Memory119
- 5.9Surfaces are Different; Schottky Barrier Thickness W = [2εεoVB/eND]1/2122
- 5.10Ferroelectrics, Piezoelectrics and Pyroelectrics: Recent Applications to Advancing Nanotechnology123
6Self-assembled Nanostructures in Nature and Industry133
- 6.1Carbon Atom 126C 1s2 2p4 (0.07 nm)134
- 6.2Methane CH4, Ethane C2H6, and Octane C8H18135
- 6.3Ethylene C2H4, Benzene C6H6, and Acetylene C2H2136
- 6.4C60 Buckyball (~0.5 nm)136
- 6.5C∞ Nanotube (~0.5 nm)137
- 6.5.1Si Nanowire (~5 nm)139
- 6.6InAs Quantum Dot (~5 nm)140
- 6.7AgBr Nanocrystal (0.1–2 μm)142
- 6.8Fe3O4 Magnetite and Fe3S4 Greigite Nanoparticles in Magnetotactic Bacteria143
- 6.9Self-assembled Monolayers on Au and Other Smooth Surfaces144
7Physics-based Experimental Approaches to Nanofabrication and Nanotechnology147
- 7.1Silicon Technology: the INTEL-IBM Approach to Nanotechnology148
- 7.1.1Patterning, Masks, and Photolithography148
- 7.1.2Etching Silicon149
- 7.1.3Defining Highly Conducting Electrode Regions150
- 7.1.4Methods of Deposition of Metal and Insulating Films150
- 7.2Lateral Resolution (Linewidths) Limited by Wavelength of Light, now 65 nm152
- 7.2.1Optical and X-ray Lithography152
- 7.2.2Electron-beam Lithography153
- 7.3Sacrificial Layers, Suspended Bridges, Single-electron Transistors153
- 7.4What is the Future of Silicon Computer Technology?155
- 7.5Heat Dissipation and the RSFQ Technology156
- 7.6Scanning Probe (Machine) Methods: One Atom at a Time160
- 7.7Scanning Tunneling Microscope (STM) as Prototype Molecular Assembler162
- 7.7.1Moving Au Atoms, Making Surface Molecules162
- 7.7.2Assembling Organic Molecules with an STM165
- 7.8Atomic Force Microscope (AFM) Arrays166
- 7.8.1Cantilever Arrays by Photolithography166
- 7.8.2Nanofabrication with an AFM167
- 7.8.3Imaging a Single Electron Spin by a Magnetic-resonance AFM168
- 7.9Fundamental Questions: Rates, Accuracy and More170
8Quantum Technologies Based on Magnetism, Electron and Nuclear Spin, and Superconductivity173
- 8.1The Stern–Gerlach Experiment: Observation of Spin ½ Angular Momentum of the Electron176
- 8.2Two Nuclear Spin Effects: MRI (Magnetic Resonance Imaging) and the “21.1 cm Line”177
- 8.3Electron Spin ½ as a Qubit for a Quantum Computer: Quantum Superposition, Coherence180
- 8.4Hard and Soft Ferromagnets183
- 8.5The Origins of GMR (Giant Magnetoresistance): Spin-dependent Scattering of Electrons184
- 8.6The GMR Spin Valve, a Nanophysical Magnetoresistance Sensor186
- 8.7The Tunnel Valve, a Better (TMR) Nanophysical Magnetic Field Sensor188
- 8.8Magnetic Random Access Memory (MRAM)190
- 8.8.1Magnetic Tunnel Junction MRAM Arrays190
- 8.8.2Hybrid Ferromagnet–Semiconductor Nonvolatile Hall Effect Gate Devices191
- 8.9Spin Injection: the Johnson–Silsbee Effect192
- 8.9.1Apparent Spin Injection from a Ferromagnet into a Carbon Nanotube195
- 8.10Magnetic Logic Devices: a Majority Universal Logic Gate196
- 8.11Superconductors and the Superconducting (Magnetic) Flux Quantum198
- 8.12Josephson Effect and the Superconducting Quantum Interference Detector (SQUID)200
- 8.13Superconducting (RSFQ) Logic/Memory Computer Elements203
9Silicon Nanoelectronics and Beyond207
- 9.1Electron Interference Devices with Coherent Electrons208
- 9.1.1Ballistic Electron Transport in Stubbed Quantum Waveguides: Experiment and Theory210
- 9.1.2Well-defined Quantum Interference Effects in Carbon Nanotubes212
- 9.2Carbon Nanotube Sensors and Dense Nonvolatile Random Access Memories214
- 9.2.1A Carbon Nanotube Sensor of Polar Molecules, Making Use of the Inherently Large Electric Fields214
- 9.2.2Carbon Nanotube Cross-bar Arrays for Ultra-dense Ultra-fast Nonvolatile Random Access Memory216
- 9.3Resonant Tunneling Diodes, Tunneling Hot Electron Transistors220
- 9.4Double-well Potential Charge Qubits222
- 9.4.1Silicon-based Quantum Computer Qubits225
- 9.5Single Electron Transistors226
- 9.5.1The Radio-frequency Single Electron Transistor (RFSET), a Useful Proven Research Tool229
- 9.5.2Readout of the Charge Qubit, with Sub-electron Charge Resolution229
- 9.5.3A Comparison of SET and RTD (Resonant Tunneling Diode) Behaviors231
- 9.6Experimental Approaches to the Double-well Charge Qubit232
- 9.6.1Coupling of Two Charge Qubits in a Solid State (Superconducting) Context237
- 9.7Ion Trap on a GaAs Chip, Pointing to a New Qubit238
- 9.8Single Molecules as Active Elements in Electronic Circuits240
- 9.9Hybrid Nanoelectronics Combining Si CMOS and Molecular Electronics: CMOL243
10Looking into the Future247
- 10.1Drexler’s Mechanical (Molecular) Axle and Bearing247
- 10.1.1Smalley’s Refutation of Machine Assembly248
- 10.1.2Van der Waals Forces for Frictionless Bearings?250
- 10.2The Concept of the Molecular Assembler is Flawed250
- 10.3Could Molecular Machines Revolutionize Technology or even Self-replicate to Threaten Terrestrial Life?252
- 10.4What about Genetic Engineering and Robotics?253
- 10.5Possible Social and Ethical Implications of Biotechnology and Synthetic Biology255
- 10.6Is there a Posthuman Future as Envisioned by Fukuyama?257
인쇄 목차 원본으로 10개 장을 절·소절·쪽수까지 확인했다(부제: An Introduction to Modern Concepts in Nanoscience). 이전에 한 줄로 합쳐 두었던 절을 원본대로 폈다. Ch.2의 스케일링 법칙(작아질 때 기계 주파수·열 시상수·점성력·마찰이 어떻게 변하는가)이 10.1의 근거다. Ch.8은 스핀트로닉스(GMR·스핀 밸브·TMR·MRAM·스핀 주입). Ch.10의 Drexler–Smalley 논쟁은 백과에 반영하지 않았다.
III
반도체 소자
11부 · 반도체 물리
Advanced Semiconductor Fundamentals
11부Robert F. Pierret · 2nd ed. · Prentice Hall, 2003 (Modular Series on Solid State Devices, Vol. VI) 원본 대조
캐리어 통계와 수송의 표준 학부 교재. 인쇄 목차 원본으로 6개 장 전부를 소절·쪽수까지 확인했다(초판 2002 → 2판 2003으로 발행 연도도 바로잡았다). 11부의 기준은 3장(에너지 밴드 이론)·4장(평형 캐리어 통계)·5장(재결합–생성)·6장(드리프트·확산·상태 방정식)이고, 1~2장은 7부·5부와 겹친다. 인쇄 목차에서 번호 없이 들여쓴 소제목은 ·로 표시했다. References·Source Listing·Problems는 싣지 않았다.
12부 · 기본 소자
Integrated Microelectronic Devices: Physics and Modeling
11·12부Jesús A. del Alamo · Pearson, 2018 · ISBN 978-0-13-467090-4 원본 대조
모든 장이 Summary·Further Reading으로 끝나고(절 번호가 붙어 있지만 목록에서는 생략했다), 그 뒤에 AT(Advanced Topics) 절이 따로 붙는다 — 이 책만의 층이라 그대로 실었다. 출판사 배포 목차가 11.3.2에서 끊겨 있던 부분(11.4~AT11.1.3)을 원서 인쇄 목차로 채웠다. 소자 장(6·7·9·11)이 같은 절 골격(이상 소자 → 열평형 → I–V → Q–V → 등가회로 → 비이상 효과 → 집적 소자)을 반복하는 것이 구조적 특징이고, 그 골격이 백과의 소자 장 템플릿이 됐다.
Solid State Electronic Devices
12부Ben G. Streetman · Sanjay Kumar Banerjee · 7th ed. · Pearson, 2015 · ISBN 978-1-292-06055-2 (Global Ed.) 원본 대조
학부 소자 표준 교재. Global Edition이라 쪽수가 미국판과 다르다 — 1장이 21쪽에서 시작하므로 미국판 쪽수와 섞지 말 것. 5.1이 pn 접합을 만드는 단위 공정(산화·확산·RTP·이온주입·CVD·리소그래피·식각·금속화)을 먼저 훑고 소자로 들어가는 구성이라 18부와 12부를 잇는 다리로 쓸 수 있다. 9.5.2(반도체 메모리)와 10.7(양자점·양자선·2D 결정·스핀트로닉·저항 변화 메모리)은 각각 15부와 10부까지 뻗는다.
Physics of Semiconductor Devices
12부S. M. Sze · Yiming Li · Kwok K. Ng · 4th ed. · Wiley, 2021 원본 대조
Part I — Semiconductor Physics
1Physics and Properties of Semiconductors — A Review
- 1.1Introduction
- 1.2Crystal Structure
- 1.3Energy Bands and Energy Gap
- 1.4Carrier Concentration at Thermal Equilibrium
- 1.5Carrier-Transport Phenomena
- 1.6Phonon, Optical, and Thermal Properties
- 1.7Heterojunctions and Nanostructures
- 1.8Basic Equations and Examples
Part II — Device Building Blocks
2p–n Junctions
- 2.1Introduction
- 2.2Depletion Region
- 2.3Current–Voltage Characteristics
- 2.4Junction Breakdown
- 2.5Transient Behavior and Noise
- 2.6Terminal Functions
- 2.7Heterojunctions
3Metal–Semiconductor Contacts
- 3.1Introduction
- 3.2Formation of Barrier
- 3.3Current Transport Processes
- 3.4Measurement of Barrier Height
- 3.5Device Structures
- 3.6Ohmic Contact
4Metal–Insulator–Semiconductor Capacitors
- 4.1Introduction
- 4.2Ideal MIS Capacitor
- 4.3Silicon MOS Capacitor
- 4.4Carrier Transport in MOS Capacitor
Part III — Transistors
5Bipolar Transistors
- 5.1Introduction
- 5.2Static Characteristics
- 5.3Compact Models of Bipolar Transistors
- 5.4Microwave Characteristics
- 5.5Related Device Structures
- 5.6Heterojunction Bipolar Transistor
- 5.7Self-Heating Effects
6MOSFETs
- 6.1Introduction
- 6.2Basic Device Characteristics
- 6.3Nonuniform Doping and Buried-Channel Device
- 6.4Device Scaling and Short-Channel Effects
- 6.5MOSFET Structures
- 6.6Circuit Applications
- 6.7NCFET and TFET
- 6.8Single-Electron Transistor
7Nonvolatile Memory Devices
- 7.1Introduction
- 7.2The Concept of Floating Gate
- 7.3Device Structures
- 7.4Compact Model of Floating-Gate Memory Cells
- 7.5Multi-Level Cells and 3-Dimensional Structures
- 7.6Applications and Scaling Challenges
- 7.7Alternative Structures
8JFETs, MESFETs, and MODFETs
- 8.1Introduction
- 8.2JFET and MESFET
- 8.3MODFET
Part IV — Negative-Resistance and Power Devices
9Tunnel Devices
- 9.1Introduction
- 9.2Tunnel Diode
- 9.3Related Tunnel Devices
- 9.4Resonant-Tunneling Diode
10IMPATT Diodes, TED, and RST Devices
- 10.1Introduction
- 10.2IMPATT Diodes
- 10.3Transferred-Electron Devices
- 10.4Real-Space-Transfer Devices
11Thyristors and Power Devices
- 11.1Introduction
- 11.2Thyristor Characteristics
- 11.3Thyristor Variations
- 11.4Other Power Devices
Part V — Photonic Devices and Sensors
12LEDs and Lasers
- 12.1Introduction
- 12.2Radiative Transitions
- 12.3Light-Emitting Diode (LED)
- 12.4Laser Physics
- 12.5Laser Operating Characteristics
- 12.6Specialty Lasers
13Photodetectors and Solar Cells
- 13.1Introduction
- 13.2Photoconductor
- 13.3Photodiodes
- 13.4Avalanche Photodiode
- 13.5Phototransistor
- 13.6Charge-Coupled Device (CCD)
- 13.7Metal–Semiconductor–Metal Photodetector
- 13.8Quantum-Well Infrared Photodetector (QWIP)
- 13.9Solar Cell
14Sensors
- 14.1Introduction
- 14.2Thermal Sensors
- 14.3Mechanical Sensors
- 14.4Magnetic Sensors
- 14.5Chemical Sensors
- 14.6Biosensors
3판(2007) 기준이던 항목을 4판(2021)으로 교체했다 — 저자에 Yiming Li가 합류했고 절 구성이 3판과 다르므로 인용할 때 판을 반드시 함께 적는다. 출판사 전자책 목차라 쪽수가 없고 소절(x.y.z)도 실려 있지 않다. 5부 14장 구성이고 각 장이 References·Problems로 끝난다. 12부의 표준 레퍼런스이자 15부(7장 비휘발성 메모리)·17부(12~14장 광소자·센서)의 1차 참조다.
13·14부 · MOS 소자
Fundamentals of Modern VLSI Devices
13·14부Yuan Taur · Tak H. Ning · 3rd ed. · Cambridge University Press, 2022 · ISBN 978-1-108-48002-4 원본 대조
1Introduction1
- 1.1Evolution of VLSI Device Technology1
- 1.1.1Historical Perspective1
- 1.1.2Recent Developments3
- 1.2Scope and Brief Description of the Book5
2Basic Device Physics9
- 2.1Energy Bands in Silicon9
- 2.1.1Bandgap of Silicon9
- 2.1.2Density of States10
- 2.1.3Distribution Function: Fermi Level12
- 2.1.4Carrier Concentration13
- 2.2n-Type and p-Type Silicon15
- 2.2.1Donors and Acceptors15
- 2.2.2Fermi Level in Extrinsic Silicon17
- 2.2.3Degenerately Doped Silicon20
- 2.3Carrier Transport in Silicon21
- 2.3.1Drift Current: Mobility22
- 2.3.2Velocity Saturation25
- 2.3.3Diffusion Current25
- 2.3.4Einstein Relations27
- 2.4Basic Equations for Device Operation28
- 2.4.1Poisson’s Equation: Electrostatic Potential28
- 2.4.2Current–Density Equations32
- 2.4.3Generation and Recombination35
- 2.4.4Current Continuity Equations38
3p–n Junctions and Metal–Silicon Contacts43
- 3.1p–n Junctions43
- 3.1.1Energy-Band Diagrams and Built-in Potential for a p–n Diode44
- 3.1.2Depletion Approximation45
- 3.1.3Spatial Variation of Quasi-Fermi Potentials53
- 3.1.4The Diode Equation62
- 3.1.5Current–Voltage Characteristics Governed by the Diode Equation65
- 3.1.6Space-Charge-Region Current67
- 3.1.7Measured Diode Current and Ideality Factor70
- 3.1.8Temperature Dependence and Magnitude of Diode Leakage Currents71
- 3.1.9Minority-Carrier Mobility, Lifetime, and Diffusion Length72
- 3.2Metal–Silicon Contacts74
- 3.2.1Static Characteristics of a Schottky Diode74
- 3.2.2Current–Voltage Characteristics of a Schottky Diode82
- 3.2.3Ohmic Contacts87
- 3.3High-Field Effects in Reverse-Biased Diodes89
- 3.3.1Impact Ionization and Avalanche Breakdown90
- 3.3.2Band-to-Band Tunneling93
4MOS Capacitors99
- 4.1Energy Band Diagram of an MOS System99
- 4.1.1Free Electron Level, Work Function, and Flatband Voltage99
- 4.1.2Gate Voltage, Surface Potential, and Charge in Silicon102
- 4.1.3Accumulation, Depletion, and Inversion103
- 4.2Electrostatic Potential and Charge Distribution in Silicon106
- 4.2.1Solving Poisson’s Equation106
- 4.2.2Surface Potential and Charge Density as a Function of Gate Voltage112
- 4.3Capacitance–Voltage Characteristics of MOS Capacitors114
- 4.3.1Measurement Setup114
- 4.3.2Capacitance Components in MOS114
- 4.3.3C–V Characteristics in Different Bias Regions115
- 4.3.4Split C–V Measurement119
- 4.3.5Polysilicon Gate: Work Function and Depletion Effects121
- 4.3.6MOS under Nonequilibrium125
- 4.4Quantum Mechanical Effects in MOS129
- 4.4.1Coupled Poisson–Schrödinger’s Equations129
- 4.4.2Quantum Effect on Inversion-Layer Depth129
- 4.4.3Quantum-Mechanical Solution in Weak Inversion131
- 4.5Interface States and Charge Traps in Oxide136
- 4.5.1Effect of Oxide Charge on Flatband Voltage137
- 4.5.2Interface–State Capacitance and Conductance138
- 4.5.3Distributed Circuit Model for Oxide Traps147
- 4.6High-Field Effects in Oxide and Oxide Degradation149
- 4.6.1Tunneling into and through Silicon Dioxide149
- 4.6.2Injection of Hot Carriers from Silicon into Silicon Dioxide158
- 4.6.3High-Field Effects in Gated Diodes160
- 4.6.4Dielectric Breakdown162
5MOSFETs: Long Channel171
- 5.1MOSFET I–V Characteristics172
- 5.1.1Gradual Channel Approximation173
- 5.1.2Charge Sheet Model176
- 5.1.3Regional I–V Models178
- 5.1.4Non-GCA Model for the Saturation Region187
- 5.1.5pMOSFET I–V Characteristics192
- 5.2MOSFET Channel Mobility192
- 5.2.1Empirical Universal Mobility192
- 5.2.2Strain Effect on Mobility196
- 5.3MOSFET Threshold Voltage198
- 5.3.1Substrate Sensitivity (Body Effect)198
- 5.3.2Temperature Dependence of Threshold Voltage199
- 5.3.3Quantum Effect on Threshold Voltage201
- 5.4MOSFET Capacitance202
6MOSFETs: Short Channel206
- 6.1Short-Channel Effect206
- 6.1.1Threshold Voltage Roll-off206
- 6.1.2Analytic Solutions to 2-D Poisson’s Equation in Subthreshold210
- 6.2High-Field Transport219
- 6.2.1Velocity Saturation219
- 6.2.2Nonlocal Transport229
- 6.3MOSFET Threshold Voltage and Channel Profile Design236
- 6.3.1Threshold Voltage Requirement237
- 6.3.2Channel Profile Design241
- 6.3.3Nonuniform Channel Doping246
- 6.3.4Discrete Dopant Effects on Threshold Voltage253
- 6.4MOSFET Degradation and Breakdown at High Fields256
- 6.4.1Hot-Carrier Effects257
- 6.4.2Negative-Bias-Temperature Instability259
- 6.4.3MOSFET Breakdown260
7Silicon-on-Insulator and Double-Gate MOSFETs264
- 7.1SOI MOSFETs265
- 7.1.1Long-Channel SOI MOSFETs265
- 7.1.2Short-Channel SOI MOSFETs271
- 7.2Double-Gate and Nanowire MOSFETs276
- 7.2.1Analytic Potential Model for Symmetric DG MOSFETs277
- 7.2.2Short-Channel DG MOSFETs281
- 7.2.3Nanowire MOSFETs287
- 7.2.4Scaling Limits of DG and Nanowire MOSFETs291
8CMOS Performance Factors295
- 8.1MOSFET Scaling295
- 8.1.1Constant-Field Scaling295
- 8.1.2Nonscaling Factors297
- 8.2Basic CMOS Circuit Elements298
- 8.2.1CMOS Inverters299
- 8.2.2CMOS NAND and NOR Gates309
- 8.2.3Inverter and NAND Layouts313
- 8.3Parasitic Elements316
- 8.3.1Source–Drain Resistance317
- 8.3.2Parasitic Capacitances321
- 8.3.3Gate Resistance324
- 8.3.4Interconnect R and C326
- 8.4Sensitivity of CMOS Delay to Device Parameters332
- 8.4.1Propagation Delay and Delay Equation333
- 8.4.2Delay Sensitivity to Channel Width, Length, and Gate Oxide Thickness339
- 8.4.3Sensitivity of Delay to Power-Supply Voltage and Threshold Voltage343
- 8.4.4Sensitivity of Delay to Parasitic Resistance and Capacitance344
- 8.4.5Effect of Transport Parameters on CMOS Delay348
- 8.4.6Delay of Two-Way NAND Gates349
- 8.5Performance Factors of MOSFETs in RF Circuits352
- 8.5.1Small-Signal Equivalent Circuit353
- 8.5.2Unity-Current-Gain Frequency354
- 8.5.3Power Gain Condition of a Two-Port Network354
- 8.5.4Unity Power-Gain Frequency355
9Bipolar Devices361
- 9.1Basic Operation of a Bipolar Transistor365
- 9.1.1Modifying the Simple Diode Theory for Describing Bipolar Transistors365
- 9.2Ideal Current–Voltage Characteristics370
- 9.2.1Intrinsic-Base Resistance and Emitter Current Crowding371
- 9.2.2Collector Current375
- 9.2.3Base Current378
- 9.2.4Current Gains382
- 9.2.5Ideal IC–VCE Characteristics384
- 9.3Measured Characteristics of Typical n–p–n Transistors385
- 9.3.1Effect of Emitter and Base Series Resistances386
- 9.3.2Effect of Base–Collector Voltage on Collector Current389
- 9.3.3Collector-Current Falloff392
- 9.3.4Excess Base Current Associated with Extrinsic-Base–Emitter Junction396
- 9.4Base Transit Time400
- 9.5Diffusion Capacitance in an Emitter–Base Diode401
- 9.5.1Small-Signal Current in a Forward-Biased Diode401
- 9.5.2Low-Frequency [ωτpE < 1 and ωtB < 1] Diffusion Capacitance405
- 9.5.3Diffusion Capacitance at High Frequencies [ωτpE > 1]406
- 9.6Bipolar Device Models for Circuit Analyses407
- 9.6.1Basic Steady-State Model407
- 9.6.2Basic ac Model409
- 9.7Breakdown Voltages416
- 9.7.1Common-Base Current Gain in the Presence of Base–Collector Junction Avalanche417
- 9.7.2Saturation Currents in a Transistor418
- 9.7.3Relation between BVCEO and BVCBO419
- 9.7.4Breakdown Voltages of Symmetric Lateral Bipolar Transistors on SOI421
10Bipolar Device Design425
- 10.1Design of the Emitter of a Vertical Bipolar Transistor425
- 10.1.1Diffused or Implanted-and-Diffused Emitter426
- 10.1.2Polysilicon Emitter427
- 10.2Design of the Base Region of a Vertical Bipolar Transistor427
- 10.2.1Base Sheet Resistivity and Collector Current Density429
- 10.2.2Ion-Implanted versus Epitaxially Grown Intrinsic Base430
- 10.2.3General Expression for Base Transit Time433
- 10.3Design of the Vertical Bipolar Transistor Collector Region434
- 10.3.1Collector Design for Low-Injection Operation435
- 10.3.2Collector Design for High-Injection Operation436
- 10.4SiGe-Base Vertical Bipolar Transistors437
- 10.4.1SiGe-Base Vertical Transistors Having Linearly Graded Base Bandgap438
- 10.4.2Base Current When Ge Is Present in the Emitter443
- 10.4.3Transistors Having a Trapezoidal Ge Distribution in the Base447
- 10.4.4Transistors Having a Constant Ge Distribution in the Base451
- 10.4.5Some Optimal Ge Profiles454
- 10.4.6Base-Width Modulation by VBE459
- 10.4.7Reverse-Mode I–V Characteristics462
- 10.4.8Heterojunction Nature of a SiGe-Base Vertical Bipolar Transistor465
- 10.4.9SiGe-Base Vertical Bipolar Transistor on Thin SOI467
- 10.5Design of Symmetric Lateral Bipolar Transistors on SOI468
- 10.5.1Relationship Governing Emitter-to-Collector Spacing and Base Width470
- 10.5.2Analytic Model for Collector and Base Currents471
- 10.5.3Analytic Ebers-Moll Model Equations473
- 10.5.4Early Voltage and Emitter–Collector Spacing475
- 10.5.5Analytic Model for the Transit Times475
- 10.5.6On the Fabrication of Thin-Base Symmetric Lateral Transistors476
- 10.5.7SiGe-on-Insulator Symmetric lateral n–p–n Transistors477
- 10.5.8Symmetric Si-Emitter/Collector SiGe-Base Lateral HBT478
11Bipolar Performance Factors485
- 11.1Figures of Merit of a Bipolar Transistor485
- 11.1.1Cutoff Frequency486
- 11.1.2Maximum Oscillation Frequency488
- 11.1.3Logic Gate Delay489
- 11.2ECL Circuit and Delay Components489
- 11.2.1Transit-Time Delay Component491
- 11.2.2Intrinsic-Base-Resistance Delay Component492
- 11.2.3Parasitic-Resistance Delay Components492
- 11.2.4Load-Resistance Delay Component492
- 11.2.5Diffusion-Capacitance Delay Component493
- 11.3Speed-versus-Current Characteristics of Bipolar Transistors493
- 11.3.1fT and fmax as a Function of Collector Current493
- 11.3.2Logic Gate Delay as a Function of Collector Current495
- 11.4Vertical-Transistor Optimization from Data Analyses496
- 11.5Bipolar Device Scaling for Logic Circuits498
- 11.5.1Vertical-Transistor Scaling for ECL498
- 11.5.2Symmetric-Lateral-Transistor Scaling for Logic Circuits499
- 11.5.3Power-Dissipation Issues with Resister-Load Bipolar Logic Circuits500
- 11.6Vertical-Transistor Design Optimization for RF and Analog Circuits502
- 11.6.1The Single-Transistor Amplifier502
- 11.6.2Maximizing fT of a Vertical Transistor503
- 11.6.3Minimizing rbi of a Vertical Transistor504
- 11.6.4Maximizing fmax of a Vertical Transistor505
- 11.6.5Maximizing VA of a Vertical Transistor505
- 11.6.6Examples of Vertical-Transistor RF and Analog Design Tradeoffs505
- 11.7Symmetric-Lateral-Transistor Design Tradeoffs and Optimization for RF and Analog Circuits507
- 11.7.1Calculated Low-Injection fT and fmax of Symmetric Lateral n–p–n507
- 11.7.2Fin-Structure Symmetric Lateral Transistors for fmax > 1 THz509
- 11.7.3Noise Reduction with Substrate Bias510
- 11.8Unique Opportunities from Symmetric Lateral Bipolar Transistors511
- 11.8.1Symmetric Lateral Bipolar Transistor as a High-Drive-Current Device511
- 11.8.2Revisit Integrated Injection Logic Circuits and SRAM513
- 11.8.3Complementary Bipolar Logic Circuits514
- 11.8.4Performance-On-Demand Designs with I2L or CBipolar Circuits516
12Memory Devices521
- 12.1Static Random-Access Memory523
- 12.1.1CMOS SRAM Cell523
- 12.1.2Other Bistable MOSFET SRAM Cells532
- 12.1.3Bipolar SRAM Cell533
- 12.2Dynamic Random-Access Memory541
- 12.2.1Basic DRAM Cell and Its Operation541
- 12.2.2Device Design and Scaling Considerations for a DRAM Cell545
- 12.3Nonvolatile Memory546
- 12.3.1MOSFET Nonvolatile Memory Devices547
- 12.3.2Flash Memory Arrays554
- 12.3.3Devices for a NOR Array559
3판 인쇄 목차와 대조해 절 제목을 원문대로 맞췄다(3.1.1·3.1.5 등이 줄여 적혀 있었다). 모든 장이 Exercises로 끝나고 참고문헌은 책 끝에 한데 모여 있다(565). 2판과 장 구성이 다르다 — 3판에서 7장(SOI·이중 게이트·나노와이어)과 대칭 측면 BJT(10.5·11.7·11.8)가 들어왔다. 13·14부의 기준 교재이고 8장이 21.6, 12장이 15부의 소자 쪽 근거다.
Modern Semiconductor Devices for Integrated Circuits
13·14부Chenming Calvin Hu · Prentice Hall, 2010 · ISBN 978-0-13-608525-6 절 수준 확보
1Electrons and Holes in Semiconductors
- 1.1Silicon Crystal Structure
- 1.2Bond Model of Electrons and Holes
- 1.3Energy Band Model
- 1.3.1Energy Band Diagram
- 1.3.2Donors and Acceptors in the Band Model
- 1.4Semiconductors, Insulators, and Conductors
- 1.5Electrons and Holes
- 1.5.1Effective Mass
- 1.5.2How to Measure the Effective Mass
- 1.6Density of States
- 1.7Thermal Equilibrium and the Fermi Function
- 1.8Electron and Hole Concentrations
- 1.8.1Derivation of n and p from D(E) and f(E)
- 1.8.2Fermi Level and the Carrier Concentrations
- 1.8.3The np Product and the Intrinsic Carrier Concentration
- 1.9General Theory of n and p
- 1.10Carrier Concentrations at Extremely High and Low Temperatures
2Motion and Recombination of Electrons and Holes
- 2.1Thermal Motion
- 2.2Drift
- 2.2.1Electron and Hole Mobilities
- 2.2.2Mechanisms of Carrier Scattering
- 2.2.3Drift Current and Conductivity
- 2.3Diffusion Current
- 2.4Relation Between the Energy Diagram and V, ℰ
- 2.5Einstein Relationship Between D and µ
- 2.6Electron–Hole Recombination
- 2.7Thermal Generation
- 2.8Quasi-Equilibrium and Quasi-Fermi Levels
3Device Fabrication Technology
- 3.1Introduction to Device Fabrication
- 3.2Oxidation of Silicon
- 3.3Lithography (Wet · Electron · Nanoimprint)
- 3.4Pattern Transfer — Etching
- 3.5Doping (Ion Implantation · Gas-Source · Solid-Source Diffusion)
- 3.6Dopant Diffusion
- 3.7Thin-Film Deposition (Sputtering · CVD · Epitaxy)
- 3.8Interconnect — The Back-End Process
- 3.9Testing, Assembly, and Qualification
- 3.10Chapter Summary — A Device Fabrication Example
4PN and Metal–Semiconductor Junctions
- ·Part I: PN Junction
- 4.1Building Blocks of the PN Junction Theory
- 4.1.1Energy Band Diagram and Depletion Layer of a PN Junction
- 4.1.2Built-In Potential
- 4.1.3Poisson's Equation
- 4.2Depletion-Layer Model
- 4.2.1Field and Potential in the Depletion Layer
- 4.2.2Depletion-Layer Width
- 4.3Reverse-Biased PN Junction
- 4.4Capacitance-Voltage Characteristics
- 4.5Junction Breakdown
- 4.5.1Peak Electric Field
- 4.5.2Tunneling Breakdown
- 4.5.3Avalanche Breakdown
- 4.6Carrier Injection Under Forward Bias — Quasi-Equilibrium Boundary Condition
- 4.7Current Continuity Equation
- 4.8Excess Carriers in Forward-Biased PN Junction
- 4.9PN Diode IV Characteristics
- 4.10Charge Storage
- 4.11Small-Signal Model of the Diode
- ·Part II: Application to Optoelectronic Devices
- 4.12Solar Cells
- 4.13Light-Emitting Diodes and Solid-State Lighting
- 4.14Diode Lasers
- 4.15Photodiodes
- ·Part III: Metal–Semiconductor Junction
- 4.16Schottky Barriers
- 4.17Thermionic Emission Theory
- 4.18Schottky Diodes
- 4.19Applications of Schottky Diodes
- 4.20Quantum Mechanical Tunneling
- 4.21Ohmic Contacts
5MOS Capacitor
- 5.1Flat-Band Condition and Flat-Band Voltage
- 5.2Surface Accumulation
- 5.3Surface Depletion
- 5.4Threshold Condition and Threshold Voltage
- 5.5Strong Inversion Beyond Threshold
- 5.6MOS C–V Characteristics
- 5.7Oxide Charge — A Modification to Vfb and Vt
- 5.8Poly-Si Gate Depletion — Effective Increase in Tox
- 5.9Inversion and Accumulation Charge-Layer Thicknesses — Quantum Mechanical Effect
- 5.10CCD Imager and CMOS Imager
6MOS Transistor
- 6.1Introduction to the MOSFET
- 6.2Complementary MOS (CMOS) Technology
- 6.3Surface Mobilities and High-Mobility FETs
- 6.3.1Surface Mobilities
- 6.3.2GaAs MESFET
- 6.3.3HEMT
- 6.3.4JFET
- 6.4MOSFET Vt, Body Effect, and Steep Retrograde Doping
- 6.5Qinv in MOSFET
- 6.6Basic MOSFET IV Model
- 6.7CMOS Inverter — A Circuit Example
- 6.7.1Voltage Transfer Curve (VTC)
- 6.7.2Inverter Speed — The Importance of Ion
- 6.7.3Power Consumption
- 6.8Velocity Saturation
- 6.9MOSFET IV Model with Velocity Saturation
- 6.10Parasitic Source-Drain Resistance
- 6.11Extraction of the Series Resistance and the Effective Channel Length
- 6.12Velocity Overshoot and Source Velocity Limit
- 6.13Output Conductance
- 6.14High-Frequency Performance
- 6.15MOSFET Noises
- 6.15.1Thermal Noise of a Resistor
- 6.15.2MOSFET Thermal Noise
- 6.15.3MOSFET Flicker Noise
- 6.15.4Signal to Noise Ratio, Noise Factor, Noise Figure
- 6.16SRAM, DRAM, Nonvolatile (Flash) Memory Devices
7MOSFETs in ICs — Scaling, Leakage, and Other Topics
- 7.1Technology Scaling — For Cost, Speed, and Power Consumption
- 7.1.1Innovations Enable Scaling
- 7.1.2Strained Silicon and Other Innovations
- 7.2Subthreshold Current — "Off" Is Not Totally "Off"
- 7.3Vt Roll-Off — Short-Channel MOSFETs Leak More
- 7.4Reducing Gate-Insulator Electrical Thickness and Tunneling Leakage
- 7.5How to Reduce Wdep
- 7.6Shallow Junction and Metal Source/Drain MOSFET
- 7.7Trade-Off Between Ion and Ioff and Design for Manufacturing
- 7.8Ultra-Thin-Body SOI and Multigate MOSFETs
- 7.8.1Ultra-Thin-Body MOSFET and SOI
- 7.8.2FinFET — Multigate MOSFET
- 7.9Output Conductance
- 7.10Device and Process Simulation
- 7.11MOSFET Compact Model for Circuit Simulation
8Bipolar Transistor
- 8.1Introduction to the BJT
- 8.2Collector Current
- 8.3Base Current
- 8.4Current Gain
- 8.4.1Emitter Band Gap Narrowing
- 8.4.2Narrow Band-Gap Base and Heterojunction BJT
- 8.4.3Poly-Silicon Emitter
- 8.4.4Gummel Plot and βF Fall-Off at High and Low IC
- 8.5Base-Width Modulation by Collector Voltage
- 8.6Ebers–Moll Model
- 8.7Transit Time and Charge Storage
- 8.7.1Base Charge Storage and Base Transit Time
- 8.7.2Drift Transistor — Built-In Base Field
- 8.7.3Emitter-to-Collector Transit Time and Kirk Effect
- 8.8Small-Signal Model
- 8.9Cutoff Frequency
- 8.10Charge Control Model
- 8.11Model for Large-Signal Circuit Simulation
부록 I~IIIDerivation of the Density of States · Derivation of the Fermi–Dirac Distribution Function · Self-Consistencies of Minority Carrier Assumptions
저자가 8개 장 PDF를 무료 배포한다(chu.berkeley.edu). 이 책만 목차 원본을 구하지 못해 절 목록을 따로 대조했고, 4.16~4.22·6.17까지 일치를 확인해 확정했다. §7.11 MOSFET Compact Model for Circuit Simulation이 BSIM — 저자가 BSIM 개발자다. 4장이 PN 접합 / 광전자 소자 / 금속-반도체 접합의 3개 Part로 나뉜 것이 이 책의 특징.
Operation and Modeling of the MOS Transistor
13·14부Yannis Tsividis · Colin McAndrew · 3rd ed. · Oxford University Press, 2011 원본 대조
MOS 소자 모델링의 표준 레퍼런스. 2장(2단자) → 3장(3단자) → 4장(4단자)으로 단자를 하나씩 늘려가며 쌓는 구성이 이 책의 특징이고, 약반전·중간반전·강반전을 같은 층위로 다루는 점(2.6·3.4·4.7~4.9)이 다른 교재와 다르다. 10.9가 BSIM·EKV·PSP를 비교해 14.9 컴팩트 모델의 1차 근거가 된다. 본문 유도의 상세판인 부록 A~K(653~712)는 목록에서 생략했다.
15부 · 메모리 소자
Nonvolatile Memory Technologies with Emphasis on Flash
15부Joe E. Brewer · Manzur Gill (eds.) · Wiley-IEEE Press, 2008 원본 대조
13개 장을 저자가 각각 다르게 쓴 편저다. 4장 Physics of Flash Memories가 FN 터널링·CHEI·SSI·SHEI를 한자리에 모아 15.5의 뼈대가 되고, 11장 Flash Memory Reliability는 145쪽짜리 한 장으로 SILC·리텐션·디스터브·스크리닝을 전부 훑는다. 5장(NOR)과 6장(NAND)이 셀·어레이 수준에서 갈라지는 지점을 나란히 보여 준다. 13장이 NROM·FeRAM·MRAM·PCM을 다뤄 15.8의 출발점이 되지만 2008년 책이라 3D NAND(15.6)와 SSD 컨트롤러(15.7)는 없다 — 그쪽은 학회 자료로 채운다.
DRAM Circuit Design: Fundamental and High-Speed Topics
15부Brent Keeth · R. Jacob Baker 외 · 2nd ed. · Wiley-IEEE Press, 2007 원본 대조
1~6장이 초판 A Tutorial(2001)의 DRAM 회로 기초이고, 7~14장이 2판에서 새로 붙은 고속 주제다 — 입출력 경로, DLL·타이밍, 제어 로직, 파워 딜리버리. 2.1 The Mbit Cell과 2.2 The Sense Amp가 15.3에, 3장 어레이 구조와 4~6장 주변 회로가 15.4에 그대로 대응한다. 9~11장은 15.9 HBM의 I/O·타이밍 배경으로 읽으면 된다. 이 책의 인쇄 목차에는 장 시작 쪽수가 없어 절 쪽수만 실었다.
IEDM · ISSCC · VLSI Symposium 자료
15부연례 학회 논문 — HBM·3D NAND·차세대 메모리의 1차 자료 미확보
목차 미확보직접 확인해 채워 넣을 것
메모리 제품 기술은 교재보다 학회 자료가 앞선다. /references/papers에서 관리할 대상.
16부 · 디스플레이 소자
Introduction to Flat Panel Displays
16부Jiun-Haw Lee · I-Chun Cheng · Hong Hua · Shin-Tson Wu · 2nd ed. · Wiley, 2020 원본 대조
1Flat Panel Displays1
- 1.1Introduction1
- 1.2Emissive and non-emissive Displays4
- 1.3Display Specifications4
- 1.3.1Physical Parameters5
- 1.3.2Brightness and Color7
- 1.3.3Contrast Ratio8
- 1.3.4Spatial and Temporal Characteristics8
- 1.3.5Efficiency and Power Consumption9
- 1.3.6Flexible Displays9
- 1.4Applications of Flat Panel Displays9
- 1.4.1Liquid Crystal Displays10
- 1.4.2Light-Emitting Diodes10
- 1.4.3Organic Light-Emitting Devices11
- 1.4.4Reflective Displays11
- 1.4.5Head-Mounted Displays12
- 1.4.6Touch Panel Technologies12
2Color Science and Engineering15
- 2.1Introduction15
- 2.2Photometry16
- 2.3The Eye18
- 2.4Colorimetry22
- 2.4.1Trichromatic Space22
- 2.4.2CIE 1931 Colormetric Observer24
- 2.4.3CIE 1976 Uniform Color System27
- 2.4.4CIECAM 02 Color Appearance Model30
- 2.4.5Color Gamut31
- 2.4.6Light Sources32
- 2.4.6.1Sunlight and Blackbody Radiators32
- 2.4.6.2Light Sources for Transmissive, Reflective, and Projection Displays33
- 2.4.6.3Color Rendering Index34
- 2.5Production and Reproduction of Colors34
- 2.6Display Measurements35
3Thin Film Transistors39
- 3.1Introduction39
- 3.2Basic Concepts of Crystalline Semiconductor Materials39
- 3.2.1Band Structure of Crystalline Semiconductors40
- 3.2.2Intrinsic and Extrinsic Semiconductors43
- 3.3Classification of Silicon Materials46
- 3.4Hydrogenated Amorphous Silicon (a-Si:H)46
- 3.4.1Electronic Structure of a:Si-H47
- 3.4.2Carrier Transport in a-Si:H48
- 3.4.3Fabrication of a-Si:H48
- 3.5Polycrystalline Silicon49
- 3.5.1Carrier Transport in Polycrystalline Silicon49
- 3.5.2Fabrication of Polycrystalline-Silicon50
- 3.6Thin-Film Transistors52
- 3.6.1Fundamentals of TFTs52
- 3.6.2a-Si:H TFTs55
- 3.6.3Poly-Si TFTs55
- 3.6.4Organic TFTs56
- 3.6.5Oxide Semiconductor TFTs57
- 3.6.6Flexible TFT Technology59
- 3.7PM and AM Driving Schemes61
4Liquid Crystal Displays71
- 4.1Introduction71
- 4.2Transmissive LCDs72
- 4.3Liquid Crystal Materials74
- 4.3.1Phase Transition Temperatures75
- 4.3.2Eutectic Mixtures75
- 4.3.3Dielectric Constants77
- 4.3.4Elastic Constants78
- 4.3.5Rotational Viscosity79
- 4.3.6Optical Properties80
- 4.3.7Refractive Indices80
- 4.3.7.1Wavelength Effect80
- 4.3.7.2Temperature Effect82
- 4.4Liquid Crystal Alignment83
- 4.5Homogeneous Cell84
- 4.5.1Phase Retardation Effect85
- 4.5.2Voltage Dependent Transmittance86
- 4.6Twisted Nematic (TN)87
- 4.6.1Optical Transmittance87
- 4.6.2Viewing Angle89
- 4.6.3Film-Compensated TN90
- 4.7In-Plane Switching (IPS)91
- 4.7.1Device Structure92
- 4.7.2Voltage-Dependent Transmittance92
- 4.7.3Viewing Angle92
- 4.7.4Phase Compensation Films93
- 4.8Fringe Field Switching (FFS)95
- 4.8.1Device Configurations95
- 4.8.2n-FFS versus p-FFS96
- 4.9Vertical Alignment (VA)98
- 4.9.1Voltage-Dependent Transmittance98
- 4.9.2Response Time99
- 4.9.3Overdrive and Undershoot Addressing101
- 4.9.4Multi-domain Vertical Alignment (MVA)102
- 4.10Ambient Contrast Ratio103
- 4.10.1Modeling of Ambient Contrast Ratio103
- 4.10.2Ambient Contrast Ratio of LCD103
- 4.10.3Ambient Contrast Ratio of OLED104
- 4.10.4Simulated ACR for Mobile Displays105
- 4.10.5Simulated ACR for TVs105
- 4.10.6Simulated Ambient Isocontrast Contour106
- 4.10.6.1Mobile Displays106
- 4.10.6.2Large-Sized TVs108
- 4.10.7Improving LCD's ACR109
- 4.10.8Improving OLED's ACR110
- 4.11Motion Picture Response Time (MPRT)112
- 4.12Wide Color Gamut114
- 4.12.1Material Synthesis and Characterizations115
- 4.12.2Device Configurations116
- 4.13High Dynamic Range118
- 4.13.1Mini-LED Backlit LCDs118
- 4.13.2Dual-Panel LCDs120
- 4.14Future Directions121
5Light-Emitting Diodes135
- 5.1Introduction135
- 5.2Material Systems138
- 5.2.1AlGaAs and AlGaInP Material Systems for Red and Yellow LEDs140
- 5.2.2GaN-Based Systems for Green, Blue, UV and UV LEDs141
- 5.2.3White LEDs143
- 5.3Diode Characteristics146
- 5.3.1p- and n-Layer147
- 5.3.2Depletion Region148
- 5.3.3J–V Characteristics150
- 5.3.4Heterojunction Structures152
- 5.3.5Quantum-Well, -Wire, and -Dot Structures152
- 5.4Light-Emitting Characteristics154
- 5.4.1Recombination Model154
- 5.4.2L-J Characteristics155
- 5.4.3Spectral Characteristics156
- 5.4.4Efficiency Droop159
- 5.5Device Fabrication160
- 5.5.1Epitaxy161
- 5.5.2Process Flow and Device Structure Design165
- 5.5.3Extraction Efficiency Improvement166
- 5.5.4Packaging168
- 5.6Applications169
- 5.6.1Traffic Signals, Electronic Signage and Huge Displays169
- 5.6.2LCD Backlight170
- 5.6.3General Lighting172
- 5.6.4Micro-LEDs173
6Organic Light-Emitting Devices179
- 6.1Introduction179
- 6.2Energy States in Organic Materials180
- 6.3Photophysical Processes182
- 6.3.1Franck–Condon Principle182
- 6.3.2Fluorescence and Phosphorescence183
- 6.3.3Jablonski Diagram185
- 6.3.4Intermolecular Processes186
- 6.3.4.1Energy Transfer Processes186
- 6.3.4.2Excimer and Exciplex Formation188
- 6.3.4.3Quenching Processes188
- 6.3.5Quantum Yield Calculation189
- 6.4Carrier Injection, Transport, and Recombination191
- 6.4.1Richardson–Schottky Thermionic Emission192
- 6.4.2SCLC, TCLC, and P–F Mobility193
- 6.4.3Charge Recombination195
- 6.4.4Electromagnetic Wave Radiation195
- 6.5Structure, Fabrication and Characterization197
- 6.5.1Device Structure of Organic Light-Emitting Device198
- 6.5.1.1Two-Layer Organic Light-Emitting Device198
- 6.5.1.2Matrix Doping in the EML200
- 6.5.1.3HIL, EIL, and p-i-n Structure202
- 6.5.1.4Top-Emission and Transparent OLEDs204
- 6.5.2Polymer OLED205
- 6.5.3Device Fabrication206
- 6.5.3.1Thin-film Formation207
- 6.5.3.2Encapsulation and Passivation210
- 6.5.3.3Device Structures for AM Driving211
- 6.5.4Electrical and Optical Characteristics212
- 6.5.5Degradation Mechanisms214
- 6.6Triplet Exciton Utilization219
- 6.6.1Phosphorescent OLEDs219
- 6.6.2Triplet-Triplet Annihilation OLED221
- 6.6.3Thermally Activated Delayed Fluorescence222
- 6.6.4Exciplex-Based OLED223
- 6.7Tandem Structure224
- 6.8Improvement of Extraction Efficiency226
- 6.9White OLEDs229
- 6.10Quantum-Dot Light-Emitting Diode231
- 6.11Applications233
- 6.11.1Mobile OLED Display233
- 6.11.2OLED TV234
- 6.11.3OLED Lighting235
- 6.11.4Flexible OLEDs235
- 6.11.5Novel Displays236
7Reflective Displays245
- 7.1Introduction245
- 7.2Electrophoretic Displays245
- 7.3Reflective Liquid Crystal Displays249
- 7.4Reflective Display Based on Optical Interference (Mirasol Display)253
- 7.5Electrowetting Display254
- 7.6Comparison of Different Reflective Display Technologies256
8Fundamentals of Head-Mounted Displays for Virtual and Augmented Reality259
- 8.1Introduction259
- 8.2Human Visual System262
- 8.3Fundamentals of Head-mounted Displays265
- 8.3.1Paraxial Optical Specifications265
- 8.3.2Microdisplay Sources272
- 8.3.3HMD Optics Principles and Architectures275
- 8.3.4Optical Combiner280
- 8.4HMD Optical Designs and Performance Specifications286
- 8.4.1HMD Optical Designs286
- 8.4.2HMD Optical Performance Specifications290
- 8.5Advanced HMD Technologies298
- 8.5.1Eyetracked and Fovea-Contingent HMDs299
- 8.5.2Dynamic Range Enhancement302
- 8.5.3Addressable Focus Cues in HMDs305
- 8.5.3.1Extended Depth of Field Displays307
- 8.5.3.2Vari-Focal Plane (VFP) Displays308
- 8.5.3.3Multi-Focal Plane (MFP) Displays309
- 8.5.3.4Head-Mounted Light Field (LF) Displays315
- 8.5.4Head-Mounted Light Field Displays316
- 8.5.4.1InI-Based Head-Mounted Light Field Displays317
- 8.5.4.2Computational Multi-Layer Head-Mounted Light Field Displays321
- 8.5.5Mutual Occlusion Capability323
9Touch Panel Technology337
- 9.1Introduction337
- 9.2Resistive Touch Panel338
- 9.3Capacitive Touch Panel339
- 9.4On-Cell and In-Cell Touch Panel344
- 9.5Optical Sensing for Large Panels347
16부의 기본 교재. 3장 Thin Film Transistors가 a-Si:H·poly-Si·유기·산화물 TFT를 한 장에 모아 16.2와 거의 그대로 겹치고, 4장(LCD)·5장(LED)·6장(OLED)이 각각 16.3·16.5·16.4의 뼈대다. 5.6.4 Micro-LEDs와 8장(HMD)·9장(터치 패널)이 16.6 쪽 재료가 된다. 2판에서 미니 LED 백라이트와 듀얼 패널 HDR(4.13), AR/VR 광학(8장)이 새로 들어왔다.
Materials for Solid State Lighting and Displays
16부Adrian Kitai (ed.) · Wiley, 2017 원본 대조
소자가 아니라 발광 소재가 축인 편저 8장이다. 2장(양자점)과 3~4장(색변환·질화물 형광체)이 16.5의 소재 근거이고, 5~6장이 OLED 발광층과 백색 OLED를 다뤄 16.4를 보강한다. 1장 Principles of Solid State Luminescence는 엑시톤부터 광도 단위까지 발광 기구 자체를 세우는 장이라 16.1과 17.3 양쪽에 걸친다. 8장의 AC 박막·분말 EL은 지금 쓰이는 기술은 아니다.
Flexible Electronics: Materials and Applications
16부William S. Wong · Alberto Salleo (eds.) · Springer, 2009 · ISBN 978-0-387-74362-2 원본 대조
1Overview of Flexible Electronics Technology1
- 1.1History of Flexible Electronics1
- 1.2Materials for Flexible Electronics3
- 1.3Fabrication Technology for Flexible Electronics18
- 1.4Outlook20
2Mechanical Theory of the Film-on-Substrate-Foil Structure: Curvature and Overlay Alignment in Amorphous Silicon Thin-Film Devices Fabricated on Free-Standing Foil Substrates29
- 2.1Introduction29
- 2.2Theory32
- 2.3Applications36
- 2.4Conclusions50
3Low-temperature Amorphous and Nanocrystalline Silicon Materials and Thin-film Transistors53
- 3.1Introduction53
- 3.2Low-temperature Amorphous and Nanocrystalline Silicon Materials55
- 3.3Low-temperature Dielectrics57
- 3.4Low-temperature Thin-film Transistor Devices59
- 3.5Device Stability67
- 3.6Conclusions and Future Prospective70
4Amorphous Silicon: Flexible Backplane and Display Application75
- 4.1Introduction75
- 4.2Enabling Technologies for Flexible Backplanes and Displays76
- 4.3Flexible Active Matrix Backplane Requirements for OLED Displays91
- 4.4Flexible AMOLED Displays Using a-Si TFT Backplanes95
- 4.5Flexible Electrophoretic Displays Fabricated using a-Si TFT Backplanes102
- 4.6Outlook for Low-Temperature a-Si TFT for Flexible Electronics Manufacturing102
5Flexible Transition Metal Oxide Electronics and Imprint Lithography107
- 5.1Introduction107
- 5.2Previous Work108
- 5.3Properties of Transistor Materials113
- 5.4Device Structures117
- 5.5Fabrication on Flexible Substrates119
- 5.6Flexible TMO Device Results128
- 5.7Future Problems and Areas of Research133
- 5.8Summary138
6Materials and Novel Patterning Methods for Flexible Electronics143
- 6.1Introduction143
- 6.2Materials Considerations for Flexible Electronics145
- 6.3Print-Processing Options for Device Fabrication150
- 6.4Performance and Characterization of Electronic Devices157
- 6.5Printed Flexible Electronics170
- 6.6Conclusions and Future Prospects176
7Sheet-Type Sensors and Actuators183
- 7.1Introduction183
- 7.2Sheet-type Image Scanners184
- 7.3Sheet-Type Braille Displays201
- 7.4Summary212
8Organic and Polymeric TFTs for Flexible Displays and Circuits215
- 8.1Introduction215
- 8.2Important Organic TFT Parameters for Electronic Systems216
- 8.3Active Matrix Displays227
- 8.4Active Matrix OLED Displays236
- 8.5Using Organic TFTs for Electronic Circuits242
- 8.6Conclusion256
9Semiconducting Polythiophenes for Field-Effect Transistor Devices in Flexible Electronics: Synthesis and Structure Property Relationships261
- 9.1Introduction261
- 9.2Polymerization of Thiophene Monomers264
- 9.3Poly(3-Alkylthiophenes)273
- 9.4Polythiophene Structural Analogues279
- 9.5Thienothiophene Polymers286
- 9.6Summary292
10Solution Cast Films of Carbon Nanotubes for Transparent Conductors and Thin Film Transistors297
- 10.1Introduction: Nanoscale Carbon for Electronics, the Value Proposition297
- 10.2Carbon NT Film Properties298
- 10.3Fabrication Technologies305
- 10.4Carbon NT Films as Conducting and Optically Transparent Material309
- 10.5TFTs with Carbon Nanotube Conducting Channels313
- 10.6Conclusions324
11Physics and Materials Issues of Organic Photovoltaics329
- 11.1Introduction329
- 11.2Basic Operation329
- 11.3Organic and Hybrid Solar Cell Architectures332
- 11.4Materials334
- 11.5Light Absorption334
- 11.6Exciton Harvesting338
- 11.7Exciton Dissociation349
- 11.8Dissociating Geminate Pairs351
- 11.9Heterojunction Energy Offsets355
- 11.10Charge Transport and Recombination357
- 11.11Nanostructures364
- 11.12Efficiency Limits and Outlook367
12Bulk Heterojunction Solar Cells for Large-Area PV Fabrication on Flexible Substrates373
- 12.1Introduction and Motivation373
- 12.2The Concept of Bulk Heterojunction Solar Cells377
- 12.3Challenges for Large-Area Processing401
- 12.4Conclusions408
13Substrates and Thin-Film Barrier Technology for Flexible Electronics413
- 13.1Introduction413
- 13.2Barrier Requirements414
- 13.3Thin-Film Barrier Technology419
- 13.4Barrier–Device Integration437
- 13.5Concluding Remarks442
Index451
인쇄 목차를 절·쪽수까지 그대로 옮겼다(13개 장). 장마다 저자가 다른 편저라 목차에 장 저자가 함께 실려 있는데 여기서는 싣지 않았다. 합자(fi)는 풀어 적었다. 16.9 차세대 디스플레이의 플렉시블·스트레처블·투명 세 절이 학회 자료만으로 서 있던 자리를 받는다 — 2장이 포일 기판 위 박막 구조의 곡률과 중립면을 정면으로 유도하고(16.9.1의 유일한 서적 근거), 13장이 기판과 배리어(수분·산소 투과)를 다뤄 소재·공정의 과제에 대응한다. 3~5장(저온 a-Si·나노결정 실리콘 · 산화물 TMO TFT)과 8장(유기·고분자 TFT)은 16.3 박막 트랜지스터의 IGZO·유기 TFT 절을 받치고, 4장은 플렉시블 AMOLED·전기영동 백플레인이다. 6장(인쇄 공정)·10장(CNT 투명 전극)은 10부와 겹치고, 11~12장(유기 태양전지 · 대면적 인쇄 공정)은 17.7에 유기·페로브스카이트 태양전지 두 절을 여는 근거가 됐다. 2009년 책이라 폴더블 상용화 이후의 적층·중립면 설계는 여기 없다 — 그쪽은 학회 자료로 채운다.
17부 · 광·전력·센서 소자
Fundamentals of Power Semiconductor Devices
17부B. Jayant Baliga · 2nd ed. · Springer, 2019 원본 대조
17.8~17.10 전력 소자의 표준. 3장 Breakdown Voltage가 3.6 에지 터미네이션 한 절에만 50쪽 가까이 쓰는 것이 이 책의 성격을 보여 준다. 6장(파워 MOSFET, 230쪽)과 9장(IGBT, 290쪽)은 사실상 각각 단행본이고, 6.22가 SiC 소자 — 2판에서 JBSFET(6.22.5)와 양방향 FET(6.22.6)가 들어왔다. 목차를 대조해 보니 슈퍼정션 전용 장은 없고 1.7 Charge-Coupled Structures가 그 자리를 대신하며, GaN도 다루지 않는다 — 이전 메모의 "슈퍼정션·GaN"은 이 대조로 정정한다.
The Physics of Solar Cells
17부Jenny Nelson · Imperial College Press, 2003 원본 대조
원본 인쇄 목차(pp. vii~xiv)로 대조 완료 — 미확보에서 곧바로 원본 대조로 올라왔다. 10장, 절 78개와 소절 166개, 쪽수 포함. 태양전지 책의 형태를 한 반도체 물리 교재다 — 3장(전자·정공, 32개 소절)과 4장(생성·재결합, 20개 소절)만으로 100쪽 가까이 쓰고, 6장에서 공핍 근사부터 J(V)까지 pn 접합을 처음부터 끝까지 손으로 푼다(§6.3 공핍 근사 → §6.4 중성 영역·공간전하 영역의 캐리어와 전류 → §6.5 J(V) 일반해). 8부·9부의 접합 해석과 그대로 겹치므로 태양전지를 건너뛰더라도 3~6장은 읽을 값이 있다. §4.5는 복사·오제·SRH·표면 재결합을 한 절에 모아 두었고, §4.3.1 Fermi’s Golden Rule이 흡수계수의 출발점이다. 9장 Managing Light(반사 방지막 · 집광 · 광 가둠 · 광자 재활용)와 10장(열역학 한계 · 탠덤 · 중간 밴드 · 핫 캐리어 · 충돌 이온화)이 17부의 뼈대다.
IV
공정과 구현
Physics of Photonic Devices
17부Shun Lien Chuang · 2nd ed. · Wiley, 2009 · ISBN 978-0-470-29319-5 원본 대조
1Introduction1
- 1.1Basic Concepts of Semiconductor Band and Bonding Diagrams1
- 1.2The Invention of Semiconductor Lasers4
- 1.3The Field of Optoelectronics8
- 1.4Overview of the Book15
Part I — Fundamentals25
2Basic Semiconductor Electronics27
- 2.1Maxwell's Equations and Boundary Conditions27
- 2.2Semiconductor Electronics Equations30
- 2.3Generation and Recombination in Semiconductors40
- 2.4Examples and Applications to Optoelectronic Devices48
- 2.5Semiconductor p-N and n-P Heterojunctions53
- 2.6Semiconductor n-N Heterojunctions and Metal-Semiconductor Junctions69
3Basic Quantum Mechanics77
- 3.1Schrödinger Equation78
- 3.2The Square Well80
- 3.3The Harmonic Oscillator90
- 3.4The Hydrogen Atom and Exciton in 2D and 3D95
- 3.5Time-Independent Perturbation Theory97
- 3.6Time-Dependent Perturbation Theory104
- 부록 3ALöwdin's Renormalization Method107
4Theory of Electronic Band Structures in Semiconductors113
- 4.1The Bloch Theorem and the k · p Method for Simple Bands113
- 4.2Kane's Model for Band Structure: The k · p Method with the Spin-Orbit Interaction118
- 4.3Luttinger-Kohn Model: The k · p Method for Degenerate Bands126
- 4.4The Effective Mass Theory for a Single Band and Degenerate Bands130
- 4.5Strain Effects on Band Structures132
- 4.6Electronic States in an Arbitrary One-Dimensional Potential144
- 4.7Kronig-Penney Model for a Superlattice152
- 4.8Band Structures of Semiconductor Quantum Wells158
- 4.9Band Structures of Strained Semiconductor Quantum Wells168
Part II — Propagation of Light179
5Electromagnetics and Light Propagation181
- 5.1Time-Harmonic Fields and Duality Principle181
- 5.2Poynting's Theorem and Reciprocity Relations183
- 5.3Plane Wave Solutions for Maxwell's Equations in Homogeneous Media186
- 5.4Light Propagation in Isotropic Media186
- 5.5Wave Propagation in Lossy Media: Lorentz Oscillator Model and Metal Plasma189
- 5.6Plane Wave Reflection from a Surface197
- 5.7Matrix Optics202
- 5.8Propagation Matrix Approach for Plane Wave Reflection from a Multilayered Medium206
- 5.9Wave Propagation in Periodic Media210
- 부록 5AKramers-Kronig Relations220
6Light Propagation in Anisotropic Media and Radiation227
- 6.1Light Propagation in Uniaxial Media227
- 6.2Wave Propagation in Gyrotropic Media: Magnetooptic Effects239
- 6.3General Solutions to Maxwell's Equations and Gauge Transformations246
- 6.4Radiation and the Far-Field Pattern249
7Optical Waveguide Theory257
- 7.1Symmetric Dielectric Slab Waveguides257
- 7.2Asymmetric Dielectric Slab Waveguides268
- 7.3Ray Optics Approach to Waveguide Problems271
- 7.4Rectangular Dielectric Waveguides273
- 7.5The Effective Index Method279
- 7.6Wave Guidance in a Lossy or Gain Medium281
- 7.7Surface Plasmon Waveguides285
8Coupled-Mode Theory295
- 8.1Waveguide Couplers295
- 8.2Coupled Optical Waveguides300
- 8.3Applications of Optical Waveguide Couplers307
- 8.4Optical Ring Resonators and Add-Drop Filters311
- 8.5Distributed Feedback (DFB) Structures322
- 부록 8ACoupling Coefficients for Parallel Waveguides332
- 부록 8BImproved Coupled-Mode Theory333
Part III — Generation of Light345
9Optical Processes in Semiconductors347
- 9.1Optical Transitions Using Fermi's Golden Rule347
- 9.2Spontaneous and Stimulated Emissions353
- 9.3Interband Absorption and Gain of Bulk Semiconductors360
- 9.4Interband Absorption and Gain in a Quantum Well365
- 9.5Interband Momentum Matrix Elements of Bulk and Quantum-Well Semiconductors371
- 9.6Quantum Dots and Quantum Wires375
- 9.7Intersubband Absorption384
- 9.8Gain Spectrum in a Quantum-Well Laser with Valence-Band Mixing Effects391
- 부록 9ACoordinate Transformation of the Basis Functions and the Momentum Matrix Elements398
10Fundamentals of Semiconductor Lasers411
- 10.1Double-Heterojunction Semiconductor Lasers412
- 10.2Gain-Guided and Index-Guided Semiconductor Lasers428
- 10.3Quantum-Well Lasers432
- 10.4Strained Quantum-Well Lasers446
- 10.5Strained Quantum-Dot Lasers457
11Advanced Semiconductor Lasers487
- 11.1Distributed Feedback Lasers487
- 11.2Vertical Cavity Surface-Emitting Lasers502
- 11.3Microcavity and Photonic Crystal Lasers515
- 11.4Quantum-Cascade Lasers530
- 11.5GaN-Based Blue-Green Lasers and LEDs548
- 11.6Coupled Laser Arrays571
- 부록 11AHamiltonian for Strained Wurtzite Crystals578
- 부록 11BBand-Edge Optical Transition Matrix Elements581
Part IV — Modulation of Light603
12Direct Modulation of Semiconductor Lasers605
- 12.1Rate Equations and Linear Gain Analysis605
- 12.2High-Speed Modulation Response with Nonlinear Gain Saturation611
- 12.3Transport Effects on Quantum-Well Lasers: Electrical versus Optical Modulation614
- 12.4Semiconductor Laser Spectral Linewidth and the Linewidth Enhancement Factor622
- 12.5Relative Intensity Noise Spectrum629
13Electrooptic and Acoustooptic Modulators639
- 13.1Electrooptic Effects and Amplitude Modulators639
- 13.2Phase Modulators648
- 13.3Electrooptic Effects in Waveguide Devices652
- 13.4Scattering of Light by Sound: Raman-Nath and Bragg Diffractions658
- 13.5Coupled-Mode Analysis for Bragg Acoustooptic Wave Couplers661
14Electroabsorption Modulators669
- 14.1General Formulation for Optical Absorption Due to an Electron-Hole Pair670
- 14.2Franz-Keldysh Effect: Photon-Assisted Tunneling673
- 14.3Exciton Effect677
- 14.4Quantum Confined Stark Effect (QCSE)683
- 14.5Electroabsorption Modulator691
- 14.6Integrated Electroabsorption Modulator-Laser (EML)693
- 14.7Self-Electrooptic Effect Devices (SEEDs)702
- 부록 14ATwo-Particle Wave Function and the Effective Mass Equation705
- 부록 14BSolution of the Electron-Hole Effective-Mass Equation with Excitonic Effects709
Part V — Detection of Light and Solar Cells721
15Photodetectors and Solar Cells723
- 15.1Photoconductors723
- 15.2p-n Junction Photodiodes734
- 15.3p-i-n Photodiodes740
- 15.4Avalanche Photodiodes744
- 15.5Intersubband Quantum-Well Photodetectors756
- 15.6Solar Cells761
Appendices787
부록 ASemiconductor Heterojunction Band Lineups in the Model-Solid Theory787
부록 BOptical Constants of GaAs and InP797
부록 CElectronic Properties of Si, Ge, and a Few Binary, Ternary, and Quaternary Compounds801
부록 DParameters for InN, GaN, AlN, and Their Ternary Compounds807
Index811
인쇄 목차를 절·쪽수까지 그대로 옮겼다(15개 장 · 5개 Part). 장 끝의 Problems·References는 번호가 없어 싣지 않았고, 장 안의 Appendix(3A·5A·8A·8B·9A·11A·11B·14A·14B)는 부록 5A 꼴로 실었다. 확보한 목차 PDF의 OCR 흔적 몇 개를 바로잡았다 — “Isotropie/Anisotropie”는 Isotropic/Anisotropic, “Appendix 1 IB”는 11B, “AIN”은 AlN이다. 17부에서 레이저 8절(17.4)을 Sze Ch.12 하나가 받치고 있던 자리가 이 책의 몫이다 — 10장(기본)·11장(DFB·VCSEL·광결정·양자 캐스케이드·GaN)이 17.4의 절과 거의 일대일로 붙고, 9장(반도체의 광학 과정)이 11.8과 17.3의 근거다. 4장(k·p·변형·양자우물 밴드 구조)과 2.5~2.6(헤테로접합)은 12.7과 겹치고, 15장은 17.1(광검출)·17.6(태양전지)를 Sze·Nelson과 다른 각도에서 받친다. 5~8장(전파·이방성 매질·도파로·결합모드)과 12~14장(직접 변조·전기광학/음향광학·전기흡수 변조기)은 이 책을 들이면서 백과에 대응하는 장이 없다는 것이 드러나 17.5 광도파로와 광변조기를 새로 열었다 — 그 장의 13개 절이 여기서 나온다. 2009년 책이라 실리콘 포토닉스와 광집적은 없다.
Microsystem Design
17부Stephen D. Senturia · Kluwer Academic, 2001 · ISBN 0-7923-7246-8 원본 대조
인쇄 목차를 절·쪽수까지 옮겼다(23개 장 · 5개 Part). 목차가 장 제목을 전부 대문자로 싣는데 여기서는 일반 표기로 바꿨고, 소절(x.y.z)은 싣지 않았다 — 인용은 절(x.y) 단위면 충분하다. 센서와 MEMS 11절이 Campbell Ch.19 하나로 버티던 자리를 이 책이 받는다 — 받을 것이 한 장에 담기지 않아 17.11 MEMS의 역학과 모델링과 17.12 MEMS 공정과 센서 소자 두 장으로 갈랐다. 5~13장(탄성·구조·에너지법·정전 작동·회로 모델·동역학)이 17.11의 뼈대이고 8.3이 박막 응력, 6장(에너지 보존 변환기)과 19.3이 기계-전기 변환이다. 3~4장(벌크·표면 마이크로머시닝과 공정 통합)과 17~23장은 17.12로 간다. 그 17~23장이 사례 연구 일곱 편(패키징 · 압저항 압력 센서 · 정전 가속도계 · DMD/GLV 디스플레이 · 압전 자이로 · PCR · 가스 센서)으로, 그중 22장 DNA 증폭과 23장 마이크로브리지 가스 센서가 화학·바이오 센서 절의 유일한 서적 근거다. 14장(전자회로)·15장(되먹임)·16장(잡음)은 CMOS-MEMS 이종 집적과 신호 처리 쪽 배경이고 22부와 겹친다. 20장(DMD·GLV)은 16부 디스플레이와도 닿는다.
18부 · 반도체 공정
Fabrication Engineering at the Micro- and Nanoscale
18부Stephen A. Campbell · 3rd ed. · Oxford University Press, 2008 원본 대조
원본 인쇄 목차(pp. v~xi)로 대조 완료 — 5부 20장 + 부록 6종, 절 193개, 쪽수 포함. 인용 판을 3판(2008)으로 확정한다 — 원본 목차를 확보한 판이 3판이고, 판이 바뀌면 절 번호가 어긋나므로 서지도 3판으로 맞췄다. 4판(2013, ISBN 978-0-19-986122-4)은 5부 20장 골격이 같고 18장 제목이 “Optoelectronic and Solar Technologies”로 바뀐 것으로 보이나 목차 원본을 확인하지 못했다. 절 제목 뒤의 °는 배경 지식 절, ⁺는 심화 절(강의에서 빼도 기본 내용에 지장이 없다는 뜻)로 원서 각주 표기를 그대로 옮긴 것이다 — 어느 절이 선수 지식이고 어느 절이 곁가지인지를 저자가 직접 표시해 둔 셈이라 읽는 순서를 짤 때 쓸 수 있다. 18.5~18.8은 인쇄 목차 자체에 없다 — 18.4 Lasers(553) 다음이 곧바로 18.9 Summary(554)로, 웹 출처에서 확보 실패로 남겨 두었던 항목이 원본의 누락으로 확인됐다. Ch.10 Vacuum Science and Plasmas가 이 책의 가장 특징적인 장이고(진공·기체 유동·글로 방전을 한 장에 모아 식각·스퍼터링·CVD의 공통 바닥을 깐다), Ch.19 MEMS가 11개 절로 가장 두껍다.
Silicon VLSI Technology: Fundamentals, Practice and Modeling
18부Plummer · Deal · Griffin · Prentice Hall, 2000 · ISBN 0-13-085037-3 원본 대조
원본 인쇄 목차(pp. iii~x)로 대조 완료 — 11장 + 부록 13종, 절 95개와 소절 203개, 쪽수 포함. 4단 깊이(§3.4.1.1)까지 인쇄 목차에 실린다. 스캔이 휘어 유도선이 기울어 있어 항목 순서와 쪽번호 순서를 1:1로 맞춰 확정했고, 1~805쪽이 한 번도 역행하지 않는 것으로 검산했다. 이 책의 진짜 특징은 3장부터 11장까지 모든 장이 같은 다섯 단계로 짜였다는 것 — Historical Development and Basic Concepts → Manufacturing Methods and Equipment → Measurement Methods → Models and Simulation → Limits and Future Trends. 즉 물리 · 장비 · 계측 · 시뮬레이션이 장마다 한 세트로 붙어 있어 18부 각 장의 절 구성을 그대로 본뜰 수 있다. §7.5(확산 모델 14절)와 §8.5(주입 모델 11절)가 TCAD 파트(20부)의 이론적 바닥이고, §6.5.1 Linear Parabolic Model이 Deal–Grove다. 4장(클린룸·웨이퍼 세정·게터링)은 다른 교재에 거의 없는 장이다. 인쇄 목차의 오기 두 개도 그대로 옮겼다 — §2.4 “Probems”(Problems), 4장의 4.7이 두 번(Summary of Key Ideas와 References가 모두 4.7이고 4.8이 없다).
Fundamentals of Semiconductor Fabrication
18부Gary S. May · Simon M. Sze · Wiley, 2004 · ISBN 0-471-23279-3 원본 대조
원본 인쇄 목차(pp. xi~xiii)로 대조 완료 — 11장 + 부록 12종, 절 59개와 소절 93개, 쪽수 포함. 웹 출처로는 절(x.y)까지만 잡혀 있던 것을 소절(x.y.z)과 쪽수까지 채웠다. 절판·이식이 잦은 판이라 인용 판을 2004년 Wiley 초판으로 고정한다. 공정 순서가 아니라 물리 순서로 짜인 교재다 — 결정성장 → 산화 → 리소그래피 → 식각 → 확산 → 이온주입 → 증착 → 집적 → 제조. 각 장이 마지막에서 두 번째 절로 시뮬레이션 절(§3.6·§4.3·§5.3·§6.4·§7.4·§8.6·§9.6)을 두고 SUPREM·PROLITH를 실제로 돌리게 하는 구성이 이 책의 성격이고, 부록 I·J가 그 명령어다 — 20부 TCAD와 바로 이어진다. §10.3~10.5(SPC · 실험계획법 · 수율)가 19부의 뼈대이고, §9.5 MEMS와 §8.3.3~8.3.4(low-k / high-k)는 이 두께의 교재 치고 드물게 들어 있는 절이다.
Semiconductor Manufacturing Technology
18부Michael Quirk · Julian Serda · Prentice Hall, 2001 · ISBN 0-13-081520-9 원본 대조
원본 인쇄 목차(pp. iii~x)로 대조 완료 — 20장 + 부록 6종, 절 129개와 소절 293개, 쪽수 포함. 이 책은 절 번호를 매기지 않는다 — 대문자 표제(A단)와 들여쓴 표제(B단)의 조판 위계가 전부여서 번호 자리를 `·`로 채웠고, 장마다 반복되는 Objectives·Summary·Key Terms·Review Questions·Web Sites·References는 싣지 않았다. 웹 출처로 잡아 두었던 장 제목 중 7·9·13·15·17·18·19장이 실제 제목과 달랐다(예: “IC Fabrication Metrology” → Metrology and Defect Inspection, “Doping” → Ion Implant, “Wafer Sort” → Wafer Test). 리소그래피를 트랙 공정 순서대로 세 장(13·14·15)에 나눈 것이 이 책의 특징이며, 10~19장은 각각 품질 지표(Quality Measures)와 트러블슈팅 절로 끝난다 — 이 두 절이 물리 교재에는 아예 없는 부분이다. 5~8장(화학물질·오염 제어·계측·가스 제어)도 마찬가지. 9장의 CMOS 14단계 흐름은 19부·20부의 뼈대로 그대로 쓸 수 있다. 목차 11번 항목의 “Via-2 and Plug-1 Formation”은 인쇄 목차 그대로다(본문 기준 Plug-2로 보이는 오기).
Introduction to Semiconductor Manufacturing Technology
18부Hong Xiao · 2nd ed. · SPIE Press, 2012 원본 대조
원본 목차 PDF로 대조 완료 — 15장 136개 절과 288개 소절, 쪽수 포함(4단계 77개 항목은 괄호로 합쳤다). 전에 SPIE 챕터 DOI로 복원해 둔 14장 목록은 틀렸다 — 실제로는 15장이고, 5장이 Thermal Processes·7장이 Plasma Basics로 순서도 다르며 15장(Future Trends)이 통째로 빠져 있었다. Ch.2가 수율·클린룸·팹 배치(웨트/디퓨전/포토/에치/임플란트/박막/CMP 베이)를 절 단위로 쪼개 18.1~18.2의 골격을 그대로 준다. 공정 장이 장비 구조 절(§5.2 · §8.3 · §12.2 Hardware)과 안전 절(§6.5 · §8.5 · §11.7 Safety)로 끝나는 것이 이 책의 강점 — 물리 중심 교재가 통째로 생략하는 부분이다. §10.9.4 Troubleshooting guide는 표 한 장으로 CVD 불량 원인을 정리한다.
Semiconductor Advanced Packaging
15·18·23부John H. Lau · Springer, 2022 · ISBN 978-981-16-8183-3 원본 대조
인쇄 목차를 절·쪽수까지 옮겼다(11개 장). 소절(x.y.z)과 장 끝 References는 싣지 않았다. 인쇄 목차의 “Wire Bonging”(5.2·5.4)은 오식으로 보이나 인쇄된 대로 두었다. 15.12 고대역폭 메모리(6절)와 23.5 첨단 패키징과 칩렛(5절)이 서적 근거 없이 학회 자료만으로 서 있던 자리를 이 책이 받는다 — 1장이 2D부터 범프리스 3D까지 스무 가지 집적 형태를 한 장에 정렬해 놓아 용어의 기준이 되고, 6장(2.5D·TSV 인터포저·CoWoS)과 7장(3D IC·HBM)이 HBM의 구조·본딩·인터포저를, 8장 Hybrid Bonding이 Cu–Cu TCB·DBI·저온 하이브리드 본딩을, 9장이 칩렛 이종 집적과 DARPA·AMD·Intel·TSMC의 구현을 다룬다. 18.26(웨이퍼·패널 레벨 패키징)의 팬아웃·WLCSP는 3·4장, 11부의 배선·유전체 쪽은 10장(저손실 유전체 — Dk·Df·CTE)이다. 2022년 책이라 하이브리드 본딩과 칩렛이 최신 상태로 들어 있고, 11장은 업계 동향이라 23부와 겹친다. 이 책의 열한 장을 18.24 한 장이 다 받지 못해 18부 뒤를 18.24 웨이퍼 테스트와 다이 준비 · 18.25 조립과 상호연결 · 18.26 웨이퍼·패널 레벨 패키징 · 18.27 2.xD·3D 집적 · 18.28 하이브리드 본딩 · 18.29 패키지 소재와 최종 테스트 여섯 장으로 폈다.
19부 · 계측·수율·공정 제어
Fundamentals of Semiconductor Manufacturing and Process Control
19부Gary S. May · Costas J. Spanos · Wiley-IEEE Press, 2006 · ISBN 0-471-78406-0 원본 대조
원본 목차 PDF로 대조 완료 — 10장 44개 절과 114개 소절, 부록 6종, 쪽수 포함(4단계 116개 항목은 괄호로 합쳤다). 웹 출처로 채워 둔 이전 목차의 절·쪽수는 모두 일치했고, 소절 이름만 원문으로 폈다. Ch.2는 May&Sze의 2~9장을 56쪽으로 압축한 복습이라 단위 공정을 처음부터 가르치지는 않는다. Ch.3이 계측을 웨이퍼 상태(§3.2)와 장비 상태(§3.3)로 나누고 Ch.9이 런투런 제어를 다룬다 — 둘 다 다른 교재에 없어 19.7·19.12가 여기에 기댄다.
Semiconductor Material and Device Characterization
19부Dieter K. Schroder · 3rd ed. · Wiley-IEEE, 2006 원본 대조
1Resistivity1
- 1.1Introduction1
- 1.2Two-Point Versus Four-Point Probe2
- 1.2.1Correction Factors8
- 1.2.2Resistivity of Arbitrarily Shaped Samples14
- 1.2.3Measurement Circuits18
- 1.2.4Measurement Errors and Precautions18
- 1.3Wafer Mapping21
- 1.3.1Double Implant21
- 1.3.2Modulated Photoreflectance23
- 1.3.3Carrier Illumination (CI)24
- 1.3.4Optical Densitometry25
- 1.4Resistivity Profiling25
- 1.4.1Differential Hall Effect (DHE)26
- 1.4.2Spreading Resistance Profiling (SRP)29
- 1.5Contactless Methods34
- 1.5.1Eddy Current34
- 1.6Conductivity Type38
- 1.7Strengths and Weaknesses40
- 부록1.1 Resistivity as a Function of Doping Density41
- 부록1.2 Intrinsic Carrier Density43
2Carrier and Doping Density61
- 2.1Introduction61
- 2.2Capacitance-Voltage (C-V)61
- 2.2.1Differential Capacitance61
- 2.2.2Band Offsets68
- 2.2.3Maximum-Minimum MOS-C Capacitance71
- 2.2.4Integral Capacitance75
- 2.2.5Mercury Probe Contacts76
- 2.2.6Electrochemical C–V Profiler (ECV)77
- 2.3Current-Voltage (I-V)79
- 2.3.1MOSFET Substrate Voltage—Gate Voltage79
- 2.3.2MOSFET Threshold Voltage81
- 2.3.3Spreading Resistance82
- 2.4Measurement Errors and Precautions82
- 2.4.1Debye Length and Voltage Breakdown82
- 2.4.2Series Resistance83
- 2.4.3Minority Carriers and Interface Traps89
- 2.4.4Diode Edge and Stray Capacitance90
- 2.4.5Excess Leakage Current91
- 2.4.6Deep Level Dopants/Traps91
- 2.4.7Semi-Insulating Substrates93
- 2.4.8Instrumental Limitations94
- 2.5Hall Effect94
- 2.6Optical Techniques97
- 2.6.1Plasma Resonance97
- 2.6.2Free Carrier Absorption98
- 2.6.3Infrared Spectroscopy99
- 2.6.4Photoluminescence (PL)101
- 2.7Secondary Ion Mass Spectrometry (SIMS)102
- 2.8Rutherford Backscattering (RBS)103
- 2.9Lateral Profiling104
- 2.10Strengths and Weaknesses105
- 부록2.1 Parallel or Series Connection?107
- 부록2.2 Circuit Conversion108
3Contact Resistance and Schottky Barriers127
- 3.1Introduction127
- 3.2Metal-Semiconductor Contacts128
- 3.3Contact Resistance131
- 3.4Measurement Techniques135
- 3.4.1Two-Contact Two-Terminal Method135
- 3.4.2Multiple-Contact Two-Terminal Methods138
- 3.4.3Four-Terminal Contact Resistance Method149
- 3.4.4Six-Terminal Contact Resistance Method156
- 3.4.5Non-Planar Contacts156
- 3.5Schottky Barrier Height157
- 3.5.1Current-Voltage158
- 3.5.2Current—Temperature160
- 3.5.3Capacitance-Voltage161
- 3.5.4Photocurrent162
- 3.5.5Ballistic Electron Emission Microscopy (BEEM)163
- 3.6Comparison of Methods163
- 3.7Strengths and Weaknesses164
- 부록3.1 Effect of Parasitic Resistance165
- 부록3.2 Alloys for Contacts to Semiconductors167
4Series Resistance, Channel Length and Width, and Threshold Voltage185
- 4.1Introduction185
- 4.2PN Junction Diodes185
- 4.2.1Current-Voltage185
- 4.2.2Open-Circuit Voltage Decay (OCVD)188
- 4.2.3Capacitance-Voltage (C–V )190
- 4.3Schottky Barrier Diodes190
- 4.3.1Series Resistance190
- 4.4Solar Cells192
- 4.4.1Series Resistance—Multiple Light Intensities195
- 4.4.2Series Resistance—Constant Light Intensity196
- 4.4.3Shunt Resistance197
- 4.5Bipolar Junction Transistors198
- 4.5.1Emitter Resistance200
- 4.5.2Collector Resistance202
- 4.5.3Base Resistance202
- 4.6MOSFETS206
- 4.6.1Series Resistance and Channel Length–Current-Voltage206
- 4.6.2Channel Length—Capacitance-Voltage216
- 4.6.3Channel Width218
- 4.7MESFETS and MODFETS219
- 4.8Threshold Voltage222
- 4.8.1Linear Extrapolation223
- 4.8.2Constant Drain Current225
- 4.8.3Sub-threshold Drain Current226
- 4.8.4Transconductance227
- 4.8.5Transconductance Derivative228
- 4.8.6Drain Current Ratio228
- 4.9Pseudo MOSFET230
- 4.10Strengths and Weaknesses231
- 부록4.1 Schottky Diode Current-Voltage Equation231
5Defects251
- 5.1Introduction251
- 5.2Generation-Recombination Statistics253
- 5.2.1A Pictorial View253
- 5.2.2A Mathematical Description255
- 5.3Capacitance Measurements258
- 5.3.1Steady-State Measurements259
- 5.3.2Transient Measurements259
- 5.4Current Measurements267
- 5.5Charge Measurements269
- 5.6Deep-Level Transient Spectroscopy (DLTS)270
- 5.6.1Conventional DLTS270
- 5.6.2Interface Trapped Charge DLTS280
- 5.6.3Optical and Scanning DLTS283
- 5.6.4Precautions285
- 5.7Thermally Stimulated Capacitance and Current288
- 5.8Positron Annihilation Spectroscopy (PAS)289
- 5.9Strengths and Weaknesses292
- 부록5.1 Activation Energy and Capture Cross-Section293
- 부록5.2 Time Constant Extraction294
- 부록5.3 Si and GaAs Data296
6Oxide and Interface Trapped Charges, Oxide Thickness319
- 6.1Introduction319
- 6.2Fixed, Oxide Trapped, and Mobile Oxide Charge321
- 6.2.1Capacitance-Voltage Curves321
- 6.2.2Flatband Voltage327
- 6.2.3Capacitance Measurements331
- 6.2.4Fixed Charge334
- 6.2.5Gate-Semiconductor Work Function Difference335
- 6.2.6Oxide Trapped Charge338
- 6.2.7Mobile Charge338
- 6.3Interface Trapped Charge342
- 6.3.1Low Frequency (Quasi-static) Methods342
- 6.3.2Conductance347
- 6.3.3High Frequency Methods350
- 6.3.4Charge Pumping352
- 6.3.5MOSFET Sub-threshold Current359
- 6.3.6DC-IV361
- 6.3.7Other Methods363
- 6.4Oxide Thickness364
- 6.4.1Capacitance-Voltage364
- 6.4.2Current-Voltage369
- 6.4.3Other Methods369
- 6.5Strengths and Weaknesses369
- 부록6.1 Capacitance Measurement Techniques371
- 부록6.2 Effect of Chuck Capacitance and Leakage Current372
7Carrier Lifetimes389
- 7.1Introduction389
- 7.2Recombination Lifetime/Surface Recombination Velocity390
- 7.3Generation Lifetime/Surface Generation Velocity394
- 7.4Recombination Lifetime—Optical Measurements395
- 7.4.1Photoconductance Decay (PCD)399
- 7.4.2Quasi-Steady-State Photoconductance (QSSPC)402
- 7.4.3Short-Circuit Current/Open-Circuit Voltage Decay (SCCD/OCVD)402
- 7.4.4Photoluminescence Decay (PLD)404
- 7.4.5Surface Photovoltage (SPV)404
- 7.4.6Steady-State Short-Circuit Current (SSSCC)411
- 7.4.7Free Carrier Absorption413
- 7.4.8Electron Beam Induced Current (EBIC)416
- 7.5Recombination Lifetime—Electrical Measurements417
- 7.5.1Diode Current-Voltage417
- 7.5.2Reverse Recovery (RR)420
- 7.5.3Open-Circuit Voltage Decay (OCVD)422
- 7.5.4Pulsed MOS Capacitor424
- 7.5.5Other Techniques428
- 7.6Generation Lifetime—Electrical Measurements429
- 7.6.1Gate-Controlled Diode429
- 7.6.2Pulsed MOS Capacitor432
- 7.7Strengths and Weaknesses440
- 부록7.1 Optical Excitation441
- 부록7.2 Electrical Excitation448
8Mobility465
- 8.1Introduction465
- 8.2Conductivity Mobility465
- 8.3Hall Effect and Mobility466
- 8.3.1Basic Equations for Uniform Layers or Wafers466
- 8.3.2Non-uniform Layers471
- 8.3.3Multi Layers474
- 8.3.4Sample Shapes and Measurement Circuits475
- 8.4Magnetoresistance Mobility479
- 8.5Time-of-Flight Drift Mobility482
- 8.6MOSFET Mobility489
- 8.6.1Effective Mobility489
- 8.6.2Field-Effect Mobility500
- 8.6.3Saturation Mobility502
- 8.7Contactless Mobility502
- 8.8Strengths and Weaknesses502
- 부록8.1 Semiconductor Bulk Mobilities503
- 부록8.2 Semiconductor Surface Mobilities506
- 부록8.3 Effect of Channel Frequency Response506
- 부록8.4 Effect of Interface Trapped Charge507
9Charge-based and Probe Characterization523
- 9.1Introduction523
- 9.2Background524
- 9.3Surface Charging525
- 9.4The Kelvin Probe526
- 9.5Applications533
- 9.5.1Surface Photovoltage (SPV)533
- 9.5.2Carrier Lifetimes534
- 9.5.3Surface Modification537
- 9.5.4Near-Surface Doping Density538
- 9.5.5Oxide Charge538
- 9.5.6Oxide Thickness and Interface Trap Density540
- 9.5.7Oxide Leakage Current541
- 9.6Scanning Probe Microscopy (SPM)542
- 9.6.1Scanning Tunneling Microscopy (STM)543
- 9.6.2Atomic Force Microscopy (AFM)544
- 9.6.3Scanning Capacitance Microscopy (SCM)547
- 9.6.4Scanning Kelvin Probe Microscopy (SKPM)550
- 9.6.5Scanning Spreading Resistance Microscopy (SSRM)553
- 9.6.6Ballistic Electron Emission Microscopy (BEEM)554
- 9.7Strengths and Weaknesses556
10Optical Characterization563
- 10.1Introduction563
- 10.2Optical Microscopy564
- 10.2.1Resolution, Magnification, Contrast565
- 10.2.2Dark-Field, Phase, and Interference Contrast Microscopy568
- 10.2.3Confocal Optical Microscopy570
- 10.2.4Interferometric Microscopy572
- 10.2.5Defect Etches575
- 10.2.6Near-Field Optical Microscopy (NFOM)575
- 10.3Ellipsometry579
- 10.3.1Theory579
- 10.3.2Null Ellipsometry581
- 10.3.3Rotating Analyzer Ellipsometry582
- 10.3.4Spectroscopic Ellipsometry (SE)583
- 10.3.5Applications584
- 10.4Transmission585
- 10.4.1Theory585
- 10.4.2Instrumentation587
- 10.4.3Applications590
- 10.5Reflection592
- 10.5.1Theory592
- 10.5.2Applications594
- 10.5.3Internal Reflection Infrared Spectroscopy598
- 10.6Light Scattering599
- 10.7Modulation Spectroscopy600
- 10.8Line Width601
- 10.8.1Optical-Physical Methods601
- 10.8.2Electrical Methods603
- 10.9Photoluminescence (PL)604
- 10.10Raman Spectroscopy608
- 10.11Strengths and Weaknesses610
- 부록10.1 Transmission Equations611
- 부록10.2 Absorption Coefficients and Refractive Indices for Selected Semiconductors613
11Chemical and Physical Characterization627
- 11.1Introduction627
- 11.2Electron Beam Techniques628
- 11.2.1Scanning Electron Microscopy (SEM)629
- 11.2.2Auger Electron Spectroscopy (AES)634
- 11.2.3Electron Microprobe (EMP)639
- 11.2.4Transmission Electron Microscopy (TEM)645
- 11.2.5Electron Beam Induced Current (EBIC)649
- 11.2.6Cathodoluminescence (CL)651
- 11.2.7Low-Energy, High-Energy Electron Diffraction (LEED)652
- 11.3Ion Beam Techniques653
- 11.3.1Secondary Ion Mass Spectrometry (SIMS)654
- 11.3.2Rutherford Backscattering Spectrometry (RBS)659
- 11.4X-Ray and Gamma-Ray Techniques665
- 11.4.1X-Ray Fluorescence (XRF)666
- 11.4.2X-Ray Photoelectron Spectroscopy (XPS)668
- 11.4.3X-Ray Topography (XRT)671
- 11.4.4Neutron Activation Analysis (NAA)674
- 11.5Strengths and Weaknesses676
- 부록11.1 Selected Features of Some Analytical Techniques678
12Reliability and Failure Analysis689
- 12.1Introduction689
- 12.2Failure Times and Acceleration Factors690
- 12.2.1Failure Times690
- 12.2.2Acceleration Factors690
- 12.3Distribution Functions692
- 12.4Reliability Concerns695
- 12.4.1Electromigration (EM)695
- 12.4.2Hot Carriers701
- 12.4.3Gate Oxide Integrity (GOI)704
- 12.4.4Negative Bias Temperature Instability (NBTI)711
- 12.4.5Stress Induced Leakage Current (SILC)712
- 12.4.6Electrostatic Discharge (ESD)712
- 12.5Failure Analysis Characterization Techniques713
- 12.5.1Quiescent Drain Current (IDDQ)713
- 12.5.2Mechanical Probes715
- 12.5.3Emission Microscopy (EMMI)715
- 12.5.4Fluorescent Microthermography (FMT)718
- 12.5.5Infrared Thermography (IRT)718
- 12.5.6Voltage Contrast718
- 12.5.7Laser Voltage Probe (LVP)719
- 12.5.8Liquid Crystals (LC)720
- 12.5.9Optical Beam Induced Resistance Change (OBIRCH)721
- 12.5.10Focused Ion Beam (FIB)723
- 12.5.11Noise723
- 12.6Strengths and Weaknesses726
- 부록12.1 Gate Currents728
부록 1·2List of Symbols · Abbreviations and Acronyms741
원본 목차 PDF로 대조 완료 — 12장 92개 절과 172개 소절, 장별 부록 22종, 쪽수 포함. 19.5(전기적 특성 평가)의 사실상 전체 출처다 — 4점 탐침 §1.2, C–V 도핑 프로파일 §2.2, 접촉저항 TLM §3.4, 채널 길이·문턱전압 추출 §4.6·§4.8, DLTS §5.6, 전하 펌핑 §6.3.4, 수명 §7.4~§7.6, 이동도 §8.3~§8.6. 19.13(신뢰성)은 Ch.12(EM·핫캐리어·GOI·NBTI·SILC·ESD)가, 19.4(조성 분석)는 Ch.11(SEM·AES·TEM·SIMS·RBS·XPS)이 받는다. 12개 장이 전부 Strengths and Weaknesses 절로 끝나 방법을 고르는 근거를 준다. 각 장의 References·Problems·Review Questions는 쪽수만 있어 옮기지 않았다.
Introduction to Statistical Quality Control
19부Douglas C. Montgomery · 8th ed. · Wiley, 2019 원본 대조
Part 1 — Introduction1
1Quality Improvement in the Modern Business Environment3
- 1.1The Meaning of Quality and Quality Improvement3
- 1.2A Brief History of Quality Control and Improvement9
- 1.3Statistical Methods for Quality Control and Improvement13
- 1.4Management Aspects of Quality Improvement16
2The DMAIC Process47
- 2.1Overview of DMAIC47
- 2.2The Define Step50
- 2.3The Measure Step52
- 2.4The Analyze Step53
- 2.5The Improve Step54
- 2.6The Control Step55
- 2.7Examples of DMAIC56
Part 2 — Statistical Methods Useful in Quality Control and Improvement63
3Modeling Process Quality65
- 3.1Describing Variation65
- 3.2Important Discrete Distributions79
- 3.3Important Continuous Distributions85
- 3.4Probability Plots96
- 3.5Some Useful Approximations100
4Inferences About Process Quality103
- 4.1Statistics and Sampling Distributions104
- 4.2Point Estimation of Process Parameters109
- 4.3Statistical Inference for a Single Sample111
- 4.4Statistical Inference for Two Samples128
- 4.5What if There Are More than Two Populations? The Analysis of Variance143
- 4.6Linear Regression Models152
Part 3 — Basic Methods of Statistical Process Control and Capability Analysis173
5Methods and Philosophy of Statistical Process Control175
- 5.1Introduction175
- 5.2Chance and Assignable Causes of Quality Variation176
- 5.3Statistical Basis of the Control Chart177
- 5.4The Rest of the Magnificent Seven195
- 5.5Implementing SPC in a Quality Improvement Program201
- 5.6An Application of SPC202
- 5.7Applications of Statistical Process Control and Quality Improvement Tools in Transactional and Service Businesses208
6Control Charts for Variables218
- 6.1Introduction218
- 6.2Control Charts for x and R219
- 6.3Control Charts for x and s242
- 6.4The Shewhart Control Chart for Individual Measurements250
- 6.5Summary of Procedures for x, R, and s Charts260
- 6.6Applications of Variables Control Charts261
7Control Charts for Attributes265
- 7.1Introduction265
- 7.2The Control Chart for Fraction Nonconforming266
- 7.3Control Charts for Nonconformities (Defects)289
- 7.4Choice Between Attributes and Variables Control Charts307
- 7.5Guidelines for Implementing Control Charts311
8Process and Measurement System Capability Analysis317
- 8.1Introduction317
- 8.2Process Capability Analysis Using a Histogram or a Probability Plot319
- 8.3Process Capability Ratios323
- 8.4Process Capability Analysis Using a Control Chart336
- 8.5Process Capability Analysis Using Designed Experiments338
- 8.6Process Capability Analysis with Attribute Data339
- 8.7Describing Capability for Many Processes340
- 8.8Gauge and Measurement System Capability Studies341
- 8.9Setting Specification Limits on Discrete Components360
- 8.10Estimating the Natural Tolerance Limits of a Process366
Part 4 — Other Statistical Process-Monitoring and Control Techniques369
9Cumulative Sum and Exponentially Weighted Moving Average Control Charts371
- 9.1The Cumulative Sum Control Chart372
- 9.2The Exponentially Weighted Moving Average Control Chart390
- 9.3The Moving Average Control Chart400
10Other Univariate Statistical Process-Monitoring and Control Techniques403
- 10.1Statistical Process Control for Short Production Runs404
- 10.2Modified and Acceptance Control Charts407
- 10.3Control Charts for Multiple-Stream Processes412
- 10.4SPC with Autocorrelated Process Data415
- 10.5Adaptive Sampling Procedures431
- 10.6Economic Design of Control Charts433
- 10.7Cuscore Charts442
- 10.8The Changepoint Model for Process Monitoring444
- 10.9Profile Monitoring445
- 10.10Control Charts in Health Care Monitoring and Public Health Surveillance449
- 10.11Overview of Other Procedures450
11Multivariate Process Monitoring and Control458
- 11.1The Multivariate Quality-Control Problem459
- 11.2Description of Multivariate Data460
- 11.3The Hotelling T2 Control Chart462
- 11.4The Multivariate EWMA Control Chart473
- 11.5Regression Adjustment476
- 11.6Control Charts for Monitoring Variability479
- 11.7Latent Structure Methods482
12Engineering Process Control and SPC488
- 12.1Process Monitoring and Process Regulation488
- 12.2Process Control by Feedback Adjustment489
- 12.3Combining SPC and EPC500
Part 5 — Process Design and Improvement with Designed Experiments505
13Factorial and Fractional Factorial Experiments for Process Design and Improvement507
- 13.1What Is Experimental Design?507
- 13.2Examples of Designed Experiments in Process and Product Improvement509
- 13.3Guidelines for Designing Experiments512
- 13.4Factorial Experiments514
- 13.5The 2k Factorial Design523
- 13.6Fractional Replication of the 2k Design551
14Process Optimization with Designed Experiments563
- 14.1Response Surface Methods and Designs563
- 14.2Process Robustness Studies572
- 14.3Evolutionary Operation583
Part 6 — Acceptance Sampling589
15Lot-by-Lot Acceptance Sampling for Attributes591
- 15.1The Acceptance-Sampling Problem591
- 15.2Single-Sampling Plans for Attributes596
- 15.3Double, Multiple, and Sequential Sampling606
- 15.4Military Standard 105E (ANSI/ASQC Z1.4, ISO 2859)615
- 15.5The Dodge–Romig Sampling Plans623
16Other Acceptance-Sampling Techniques627
- 16.1Acceptance Sampling by Variables627
- 16.2Designing a Variables-Sampling Plan with a Specified OC Curve630
- 16.3MIL STD 414 (ANSI/ASQC Z1.9)631
- 16.4Other Variables Sampling Procedures635
- 16.5Chain Sampling636
- 16.6Continuous Sampling638
- 16.7Skip-Lot Sampling Plans641
부록Exercises (E-1) · Appendix (A-1) · Bibliography (B-1) · Index (I-1) — 연습문제와 참고문헌은 e-text 제공A-1
원본 목차 PDF로 대조 완료 — 6부 16장 95개 절, 쪽수 포함. 19.10(통계적 공정 관리)의 확장 출처다 — May&Spanos가 Ch.6 한 장 34쪽으로 끝내는 내용을 Ch.5~12(관리도 철학 · 변량형 · 계수형 · 공정능력 · CUSUM/EWMA · 다변량 · EPC)가 300쪽으로 편다. 19.8(통계 기초)은 Ch.3·4, 19.11(실험 계획)은 Ch.13·14가 대응한다. Ch.15·16의 합격 판정 샘플링에는 백과에 대응하는 장이 없다 — 넣는다면 19.10 아래다. 8판은 연습문제와 참고문헌을 인쇄본에서 빼고 e-text로만 준다(목차의 E-1·B-1).
Principles of Instrumental Analysis
19부Skoog · Holler · Crouch · 7th ed. · Cengage, 2017 원본 대조
원본 목차 PDF로 대조 완료 — 6부 34장 191개 절, 부록 4종, 쪽수 포함. 절 번호가 장 번호 + 대문자(1A · 21C) 방식이라 인용할 때 “Skoog §21C”처럼 적는다. 19.4(조성 분석)의 출처는 Ch.21 Surface Characterization(전자분광 §21C · 이온분광 §21D · SPM §21G)이 핵심이고, Ch.11(ICP-MS·글로우방전), Ch.12(XRF·XPS·전자 마이크로프로브), Ch.18(라만), Ch.20(분자 질량분석)이 붙는다. Ch.2~5(회로 · 연산증폭기 · 디지털 전자 · 신호와 잡음)는 계측기 자체의 전자 회로를 다루는 드문 장이라 19.1·19.7의 배경이 된다. 다만 이 책은 분석화학 교재라 반도체 사례가 없다 — 원리만 가져오고 응용은 Schroder로 갈아탈 것.
20부 · TCAD 시뮬레이션
Analysis and Simulation of Semiconductor Devices
20부Siegfried Selberherr · Springer, 1984 원본 대조
1Introduction1
- 1.1The Goal of Modeling1
- 1.2The History of Numerical Device Modeling2
- 1.3References4
2Some Fundamental Properties8
- 2.1Poisson's Equation8
- 2.2Continuity Equations10
- 2.3Carrier Transport Equations11
- 2.4Carrier Concentrations23
- 2.5Heat Flow Equation40
- 2.6The Basic Semiconductor Equations41
- 2.7References42
3Process Modeling46
- 3.1Ion Implantation46
- 3.2Diffusion63
- 3.3Oxidation72
- 3.4References76
4The Physical Parameters80
- 4.1Carrier Mobility Modeling80
- 4.2Carrier Generation-Recombination Modeling103
- 4.3Thermal Conductivity Modeling118
- 4.4Thermal Generation Modeling120
- 4.5References121
5Analytical Investigations About the Basic Semiconductor Equations127
- 5.1Domain and Boundary Conditions128
- 5.2Dependent Variables134
- 5.3The Existence of Solutions140
- 5.4Uniqueness or Non-Uniqueness of Solutions141
- 5.5Scaling141
- 5.6The Singular Perturbation Approach144
- 5.7References147
6The Discretization of the Basic Semiconductor Equations149
- 6.1Finite Differences150
- 6.2Finite Boxes175
- 6.3Finite Elements181
- 6.4The Transient Problem191
- 6.5Designing a Mesh197
- 6.6References199
7The Solution of Systems of Nonlinear Algebraic Equations202
- 7.1Newton's Method and Extensions203
- 7.2Iterative Methods208
- 7.3References212
8The Solution of Sparse Systems of Linear Equations214
- 8.1Direct Methods214
- 8.2Ordering Methods216
- 8.3Relaxation Methods239
- 8.4Alternating Direction Methods245
- 8.5Strongly Implicit Methods246
- 8.6Convergence Acceleration of Iterative Methods249
- 8.7References254
9A Glimpse on Results258
- 9.1Breakdown Phenomena in MOSFET's258
- 9.2The Rate Effect in Thyristors270
- 9.3References284
소자 시뮬레이션의 수치 해석적 토대 — 20.3 수치 해석 기반과 20.4 메싱의 근거다. 6.2 Finite Boxes가 박스 적분법, 7장이 Newton 반복, 8장이 희소 선형계 풀이·수렴 가속이다. 1984년 책이라 물리 모델(4장)은 낡았지만 이산화와 수렴 이론은 그대로 통용된다 — 최신 모델은 논문으로 보완한다.
V
회로와 산업
Computational Electronics: Semiclassical and Quantum Device Modeling and Simulation
20부Dragica Vasileska · Stephen M. Goodnick · Gerald Klimeck · CRC Press, 2010 · ISBN 978-1-4200-6483-9 원본 대조
1Introduction to Computational Electronics1
- 1.1Si-Based Nanoelectronics1
- 1.2Heterostructure Devices in III–V or II–VI Technology11
- 1.3Modeling of Nanoscale Devices15
- 1.4The Content of This Book18
2Introductory Concepts23
- 2.1Crystal Structure23
- 2.2Semiconductors32
- 2.3Band Structure36
- 2.4Preparation of Semiconductor Materials40
- 2.5Effective Mass45
- 2.6Density of States54
- 2.7Electron Mobility57
- 2.8Semiconductor Statistics59
- 2.9Semiconductor Devices60
3Semiclassical Transport Theory95
- 3.1Approximations for the Distribution Function96
- 3.2Boltzmann Transport Equation98
- 3.3Relaxation-Time Approximation102
- 3.4Rode's Iterative Method108
- 3.5Scattering Mechanisms: Brief Description111
- 3.6Implementation of the Rode Method for 6H-SiC Mobility Calculation125
4The Drift-Diffusion Equations and Their Numerical Solution151
- 4.1Drift-Diffusion Model Derivation151
- 4.2Drift-Diffusion Application Examples168
5Hydrodynamic Modeling193
- 5.1Introduction193
- 5.2Extensions of the Drift-Diffusion Model196
- 5.3Stratton's Approach199
- 5.4Hydrodynamic (Balance, Bløtekjær) Equations Model200
- 5.5The Need for Commercial Semiconductor Device Modeling Tools219
- 5.6State-of-the-Art Commercial Packages222
- 5.7The Advantages and Disadvantages of Hydrodynamic Models: Simulations of Different Generation FD SOI Devices227
6Particle-Based Device Simulation Methods241
- 6.1Direct Solution of Boltzmann Transport Equation: Monte Carlo Method242
- 6.2Multi-Carrier Effects286
- 6.3Device Simulations292
- 6.4Coulomb Force Treatment within a Particle-Based Device Simulation Scheme306
- 6.5Representative Simulation Results of Multiparticle and Discrete Impurity Effects318
7Modeling Thermal Effects in Nano-Devices335
- 7.1Some General Aspects of Heat Conduction337
- 7.2Classical Heat Conduction in Solids342
- 7.3Form of the Heat Source Term343
- 7.4Modeling Heating Effects with Commercial Simulation Packages345
- 7.5The ASU Particle-Based Approach to Lattice Heating in Nanoscale Devices349
- 7.6Open Problems363
8Quantum Corrections to Semiclassical Approaches367
- 8.1One-Dimensional Quantum-Mechanical Space Quantization369
- 8.2Quantum Corrections to Drift-Diffusion and Hydrodynamic Simulators383
- 8.3The Effective Potential Approach in Conjunction with Particle-Based Simulations387
- 8.4Description of Gate Current Models Used in Device Simulations394
- 8.5Monte Carlo—k·p—1D Schrödinger Solver for Modeling Transport in p-Channel Strained SiGe Devices405
9Quantum Transport in Semiconductor Systems445
- 9.1Tunneling446
- 9.2General Notation448
- 9.3Transfer Matrix Approach461
- 9.4Landauer Formula and Usuki Method471
10Far-From-Equilibrium Quantum Transport493
- 10.1Mixed States and Distribution Function493
- 10.2Irreversible Processes and MASTER Equations495
- 10.3The Wigner Distribution Function496
- 10.4Green's Functions498
- 10.5Nonequilibrium Keldysh Green's Functions506
- 10.6Low Field Transport in Strained-Si Inversion Layers513
- 10.7NEGF in a Quasi-1D Formulation526
- 10.8Quantum Transport in 1D—Resonant Tunneling Diodes534
- 10.9Coherent High-Field Transport in 2D and 3D568
11Conclusions599
Appendices605
부록 AElectronic Band Structure Calculation605
부록 BPoisson Equation Solvers633
부록 CComputational Electromagnetics673
부록 DStationary and Time-Dependent Perturbation Theory717
Index747
인쇄 목차를 절·쪽수까지 옮겼다(11개 장 + 부록 4종). 소절(x.y.z)과 장 끝의 Problems·References는 싣지 않았다. 목차 PDF의 글리프 흔적을 바로잡았다 — “k /C1p”는 k·p, “Distributi on/Introducti on/Irreversibl e”는 자간이 벌어진 것이다. 20부의 이론 근거가 Selberherr(1984) 한 권이던 자리를 받는다 — 1984년 책에는 없는 유체역학 모델(5장)·입자 기반 몬테카를로(6장)·양자 보정(8장)·NEGF 양자 수송(9·10장)이 여기 있다. 20.3(수치 해석 기반)은 4장과 부록 B(푸아송 해법), 20.6(소자 시뮬레이션)은 4~6장, 자기발열은 7장이 근거다. 8~10장(양자 보정 · NEGF · 밀도범함수)은 받을 장이 없어 20.7 양자 수송 시뮬레이션을 새로 열었다 — 그 장의 8개 절이 여기서 나온다. 5.6 State-of-the-Art Commercial Packages가 20.1(상용 툴 비교)의 유일한 서적 근거이고, 3장(볼츠만 수송·완화시간 근사)은 7.12와도 닿는다. 같은 저자들의 Computational Electronics(Morgan & Claypool, 2006)는 이 책의 축약 강의노트판이라 따로 싣지 않았다.
21부 · 디지털 논리 회로
Digital Design: With an Introduction to the Verilog HDL, VHDL, and SystemVerilog
21부M. Morris Mano · Michael D. Ciletti · 6th ed. · Pearson, 2018 원본 대조
21.1~21.3(수의 표현과 부울 대수 · 조합 논리 · 순차 논리)과 21.4 레지스터 전송 수준 설계와 HDL의 기준 교재. 절 번호가 장 안에서 1부터 붙는다. 9장은 실험 과제, 10장은 IEEE 표준 기호라 백과 본문에서는 거의 쓰지 않는다. 3.9~3.10과 4.12~4.15가 HDL 도입부이고, 8.13에서 SystemVerilog가 처음 나온다. 원본 목차의 장 끝 Summary·Problems·References 항목은 번호가 없어 싣지 않았다.
Digital Integrated Circuits: A Design Perspective
21부Rabaey · Chandrakasan · Nikolić · 2nd ed. · Prentice Hall, 2003 절 수준 확보
CMOS 인버터·지연·전력의 기준 교재 — 21.5 CMOS 논리 구현 · 21.6 래치와 플립플롭 회로 · 21.9 타이밍과 전력을 맡는다. 5.4가 전파 지연, 5.5가 동적·정적 전력, 10.3이 클록 스큐와 지터이고, 4장·9장이 21.7 배선과 기생 성분, 11장이 21.13 데이터패스 회로다. 장 사이의 Design Methodology Insert A~H는 번호 없는 별도 꼭지라 「부록 A」식으로 적었다 — 인용할 때는 “Rabaey, Insert H: Design for Testability”처럼 쓴다. 확보한 원본 목차에 쪽수가 없어 절 번호까지만 실었다. 별표(*)는 원본이 선택 절로 표시한 것이다.
CMOS VLSI Design: A Circuits and Systems Perspective
21부Weste · Harris · 4th ed. · Addison-Wesley, 2010 원본 대조
1Introduction
- 1.1A Brief History1
- 1.2Preview6
- 1.3MOS Transistors6
- 1.4CMOS Logic9
- 1.4.1The Inverter9
- 1.4.2The NAND Gate9
- 1.4.3CMOS Logic Gates9
- 1.4.4The NOR Gate11
- 1.4.5Compound Gates11
- 1.4.6Pass Transistors and Transmission Gates12
- 1.4.7Tristates14
- 1.4.8Multiplexers15
- 1.4.9Sequential Circuits16
- 1.5CMOS Fabrication and Layout19
- 1.5.1Inverter Cross-Section19
- 1.5.2Fabrication Process20
- 1.5.3Layout Design Rules24
- 1.5.4Gate Layouts27
- 1.5.5Stick Diagrams28
- 1.6Design Partitioning29
- 1.6.1Design Abstractions30
- 1.6.2Structured Design31
- 1.6.3Behavioral, Structural, and Physical Domains31
- 1.7Example: A Simple MIPS Microprocessor33
- 1.7.1MIPS Architecture33
- 1.7.2Multicycle MIPS Microarchitecture34
- 1.8Logic Design38
- 1.8.1Top-Level Interfaces38
- 1.8.2Block Diagrams38
- 1.8.3Hierarchy40
- 1.8.4Hardware Description Languages40
- 1.9Circuit Design42
- 1.10Physical Design45
- 1.10.1Floorplanning45
- 1.10.2Standard Cells48
- 1.10.3Pitch Matching50
- 1.10.4Slice Plans50
- 1.10.5Arrays51
- 1.10.6Area Estimation51
- 1.11Design Verification53
- 1.12Fabrication, Packaging, and Testing54
2MOS Transistor Theory
- 2.1Introduction61
- 2.2Long-Channel I-V Characteristics64
- 2.3C-V Characteristics68
- 2.3.1Simple MOS Capacitance Models68
- 2.3.2Detailed MOS Gate Capacitance Model70
- 2.3.3Detailed MOS Diffusion Capacitance Model72
- 2.4Nonideal I-V Effects74
- 2.4.1Mobility Degradation and Velocity Saturation75
- 2.4.2Channel Length Modulation78
- 2.4.3Threshold Voltage Effects79
- 2.4.4Leakage80
- 2.4.5Temperature Dependence85
- 2.4.6Geometry Dependence86
- 2.4.7Summary86
- 2.5DC Transfer Characteristics87
- 2.5.1Static CMOS Inverter DC Characteristics88
- 2.5.2Beta Ratio Effects90
- 2.5.3Noise Margin91
- 2.5.4Pass Transistor DC Characteristics92
- 2.6Pitfalls and Fallacies93
3CMOS Processing Technology
- 3.1Introduction99
- 3.2CMOS Technologies100
- 3.2.1Wafer Formation100
- 3.2.2Photolithography101
- 3.2.3Well and Channel Formation103
- 3.2.4Silicon Dioxide (SiO2)105
- 3.2.5Isolation106
- 3.2.6Gate Oxide107
- 3.2.7Gate and Source/Drain Formations108
- 3.2.8Contacts and Metallization110
- 3.2.9Passivation112
- 3.2.10Metrology112
- 3.3Layout Design Rules113
- 3.3.1Design Rule Background113
- 3.3.2Scribe Line and Other Structures116
- 3.3.3MOSIS Scalable CMOS Design Rules117
- 3.3.4Micron Design Rules118
- 3.4CMOS Process Enhancements119
- 3.4.1Transistors119
- 3.4.2Interconnect122
- 3.4.3Circuit Elements124
- 3.4.4Beyond Conventional CMOS129
- 3.5Technology-Related CAD Issues130
- 3.5.1Design Rule Checking (DRC)131
- 3.5.2Circuit Extraction132
- 3.6Manufacturing Issues133
- 3.6.1Antenna Rules133
- 3.6.2Layer Density Rules134
- 3.6.3Resolution Enhancement Rules134
- 3.6.4Metal Slotting Rules135
- 3.6.5Yield Enhancement Guidelines135
- 3.7Pitfalls and Fallacies136
- 3.8Historical Perspective137
4Delay
- 4.1Introduction141
- 4.1.1Definitions141
- 4.1.2Timing Optimization142
- 4.2Transient Response143
- 4.3RC Delay Model146
- 4.3.1Effective Resistance146
- 4.3.2Gate and Diffusion Capacitance147
- 4.3.3Equivalent RC Circuits147
- 4.3.4Transient Response148
- 4.3.5Elmore Delay150
- 4.3.6Layout Dependence of Capacitance153
- 4.3.7Determining Effective Resistance154
- 4.4Linear Delay Model155
- 4.4.1Logical Effort156
- 4.4.2Parasitic Delay156
- 4.4.3Delay in a Logic Gate158
- 4.4.4Drive159
- 4.4.5Extracting Logical Effort from Datasheets159
- 4.4.6Limitations to the Linear Delay Model160
- 4.5Logical Effort of Paths163
- 4.5.1Delay in Multistage Logic Networks163
- 4.5.2Choosing the Best Number of Stages166
- 4.5.3Example168
- 4.5.4Summary and Observations169
- 4.5.5Limitations of Logical Effort171
- 4.5.6Iterative Solutions for Sizing171
- 4.6Timing Analysis Delay Models173
- 4.6.1Slope-Based Linear Model173
- 4.6.2Nonlinear Delay Model174
- 4.6.3Current Source Model174
- 4.7Pitfalls and Fallacies174
- 4.8Historical Perspective175
5Power
- 5.1Introduction181
- 5.1.1Definitions182
- 5.1.2Examples182
- 5.1.3Sources of Power Dissipation184
- 5.2Dynamic Power185
- 5.2.1Activity Factor186
- 5.2.2Capacitance188
- 5.2.3Voltage190
- 5.2.4Frequency192
- 5.2.5Short-Circuit Current193
- 5.2.6Resonant Circuits193
- 5.3Static Power194
- 5.3.1Static Power Sources194
- 5.3.2Power Gating197
- 5.3.3Multiple Threshold Voltages and Oxide Thicknesses199
- 5.3.4Variable Threshold Voltages199
- 5.3.5Input Vector Control200
- 5.4Energy-Delay Optimization200
- 5.4.1Minimum Energy200
- 5.4.2Minimum Energy-Delay Product203
- 5.4.3Minimum Energy Under a Delay Constraint203
- 5.5Low Power Architectures204
- 5.5.1Microarchitecture204
- 5.5.2Parallelism and Pipelining204
- 5.5.3Power Management Modes205
- 5.6Pitfalls and Fallacies206
- 5.7Historical Perspective207
6Interconnect
- 6.1Introduction211
- 6.1.1Wire Geometry211
- 6.1.2Example: Intel Metal Stacks212
- 6.2Interconnect Modeling213
- 6.2.1Resistance214
- 6.2.2Capacitance215
- 6.2.3Inductance218
- 6.2.4Skin Effect219
- 6.2.5Temperature Dependence220
- 6.3Interconnect Impact220
- 6.3.1Delay220
- 6.3.2Energy222
- 6.3.3Crosstalk222
- 6.3.4Inductive Effects224
- 6.3.5An Aside on Effective Resistance and Elmore Delay227
- 6.4Interconnect Engineering229
- 6.4.1Width, Spacing, and Layer229
- 6.4.2Repeaters230
- 6.4.3Crosstalk Control232
- 6.4.4Low-Swing Signaling234
- 6.4.5Regenerators236
- 6.5Logical Effort with Wires236
- 6.6Pitfalls and Fallacies237
7Robustness
- 7.1Introduction241
- 7.2Variability241
- 7.2.1Supply Voltage242
- 7.2.2Temperature242
- 7.2.3Process Variation243
- 7.2.4Design Corners244
- 7.3Reliability246
- 7.3.1Reliability Terminology246
- 7.3.2Oxide Wearout247
- 7.3.3Interconnect Wearout249
- 7.3.4Soft Errors251
- 7.3.5Overvoltage Failure252
- 7.3.6Latchup253
- 7.4Scaling254
- 7.4.1Transistor Scaling255
- 7.4.2Interconnect Scaling257
- 7.4.3International Technology Roadmap for Semiconductors258
- 7.4.4Impacts on Design259
- 7.5Statistical Analysis of Variability263
- 7.5.1Properties of Random Variables263
- 7.5.2Variation Sources266
- 7.5.3Variation Impacts269
- 7.6Variation-Tolerant Design274
- 7.6.1Adaptive Control275
- 7.6.2Fault Tolerance275
- 7.7Pitfalls and Fallacies277
- 7.8Historical Perspective278
8Circuit Simulation
- 8.1Introduction287
- 8.2A SPICE Tutorial288
- 8.2.1Sources and Passive Components288
- 8.2.2Transistor DC Analysis292
- 8.2.3Inverter Transient Analysis292
- 8.2.4Subcircuits and Measurement294
- 8.2.5Optimization296
- 8.2.6Other HSPICE Commands298
- 8.3Device Models298
- 8.3.1Level 1 Models299
- 8.3.2Level 2 and 3 Models300
- 8.3.3BSIM Models300
- 8.3.4Diffusion Capacitance Models300
- 8.3.5Design Corners302
- 8.4Device Characterization303
- 8.4.1I-V Characteristics303
- 8.4.2Threshold Voltage306
- 8.4.3Gate Capacitance308
- 8.4.4Parasitic Capacitance308
- 8.4.5Effective Resistance310
- 8.4.6Comparison of Processes311
- 8.4.7Process and Environmental Sensitivity313
- 8.5Circuit Characterization313
- 8.5.1Path Simulations313
- 8.5.2DC Transfer Characteristics315
- 8.5.3Logical Effort315
- 8.5.4Power and Energy318
- 8.5.5Simulating Mismatches319
- 8.5.6Monte Carlo Simulation319
- 8.6Interconnect Simulation319
- 8.7Pitfalls and Fallacies322
9Combinational Circuit Design
- 9.1Introduction327
- 9.2Circuit Families328
- 9.2.1Static CMOS329
- 9.2.2Ratioed Circuits334
- 9.2.3Cascode Voltage Switch Logic339
- 9.2.4Dynamic Circuits339
- 9.2.5Pass-Transistor Circuits349
- 9.3Circuit Pitfalls354
- 9.3.1Threshold Drops355
- 9.3.2Ratio Failures355
- 9.3.3Leakage356
- 9.3.4Charge Sharing356
- 9.3.5Power Supply Noise356
- 9.3.6Hot Spots357
- 9.3.7Minority Carrier Injection357
- 9.3.8Back-Gate Coupling358
- 9.3.9Diffusion Input Noise Sensitivity358
- 9.3.10Process Sensitivity358
- 9.3.11Example: Domino Noise Budgets359
- 9.4More Circuit Families360
- 9.5Silicon-On-Insulator Circuit Design360
- 9.5.1Floating Body Voltage361
- 9.5.2SOI Advantages362
- 9.5.3SOI Disadvantages362
- 9.5.4Implications for Circuit Styles363
- 9.5.5Summary364
- 9.6Subthreshold Circuit Design364
- 9.6.1Sizing365
- 9.6.2Gate Selection365
- 9.7Pitfalls and Fallacies366
- 9.8Historical Perspective367
10Sequential Circuit Design
- 10.1Introduction375
- 10.2Sequencing Static Circuits376
- 10.2.1Sequencing Methods376
- 10.2.2Max-Delay Constraints379
- 10.2.3Min-Delay Constraints383
- 10.2.4Time Borrowing386
- 10.2.5Clock Skew389
- 10.3Circuit Design of Latches and Flip-Flops391
- 10.3.1Conventional CMOS Latches392
- 10.3.2Conventional CMOS Flip-Flops393
- 10.3.3Pulsed Latches395
- 10.3.4Resettable Latches and Flip-Flops396
- 10.3.5Enabled Latches and Flip-Flops397
- 10.3.6Incorporating Logic into Latches398
- 10.3.7Klass Semidynamic Flip-Flop (SDFF)399
- 10.3.8Differential Flip-Flops399
- 10.3.9Dual Edge-Triggered Flip-Flops400
- 10.3.10Radiation-Hardened Flip-Flops401
- 10.3.11True Single-Phase-Clock (TSPC) Latches and Flip-Flops402
- 10.4Static Sequencing Element Methodology402
- 10.4.1Choice of Elements403
- 10.4.2Characterizing Sequencing Element Delays405
- 10.4.3State Retention Registers408
- 10.4.4Level-Converter Flip-Flops408
- 10.4.5Design Margin and Adaptive Sequential Elements409
- 10.4.6Two-Phase Timing Types411
- 10.5Sequencing Dynamic Circuits411
- 10.6Synchronizers411
- 10.6.1Metastability412
- 10.6.2A Simple Synchronizer415
- 10.6.3Communicating Between Asynchronous Clock Domains416
- 10.6.4Common Synchronizer Mistakes417
- 10.6.5Arbiters419
- 10.6.6Degrees of Synchrony419
- 10.7Wave Pipelining420
- 10.8Pitfalls and Fallacies422
- 10.9Case Study: Pentium 4 and Itanium 2 Sequencing Methodologies423
11Datapath Subsystems
- 11.1Introduction429
- 11.2Addition/Subtraction429
- 11.2.1Single-Bit Addition430
- 11.2.2Carry-Propagate Addition434
- 11.2.3Subtraction458
- 11.2.4Multiple-Input Addition458
- 11.2.5Flagged Prefix Adders459
- 11.3One/Zero Detectors461
- 11.4Comparators462
- 11.4.1Magnitude Comparator462
- 11.4.2Equality Comparator462
- 11.4.3K=A+B Comparator463
- 11.5Counters463
- 11.5.1Binary Counters464
- 11.5.2Fast Binary Counters465
- 11.5.3Ring and Johnson Counters466
- 11.5.4Linear-Feedback Shift Registers466
- 11.6Boolean Logical Operations468
- 11.7Coding468
- 11.7.1Parity468
- 11.7.2Error-Correcting Codes468
- 11.7.3Gray Codes470
- 11.7.4XOR/XNOR Circuit Forms471
- 11.8Shifters472
- 11.8.1Funnel Shifter473
- 11.8.2Barrel Shifter475
- 11.8.3Alternative Shift Functions476
- 11.9Multiplication476
- 11.9.1Unsigned Array Multiplication478
- 11.9.2Two’s Complement Array Multiplication479
- 11.9.3Booth Encoding480
- 11.9.4Column Addition485
- 11.9.5Final Addition489
- 11.9.6Fused Multiply-Add490
- 11.9.7Serial Multiplication490
- 11.9.8Summary490
- 11.10Parallel-Prefix Computations491
- 11.11Pitfalls and Fallacies493
12Array Subsystems
- 12.1Introduction497
- 12.2SRAM498
- 12.2.1SRAM Cells499
- 12.2.2Row Circuitry506
- 12.2.3Column Circuitry510
- 12.2.4Multi-Ported SRAM and Register Files514
- 12.2.5Large SRAMs515
- 12.2.6Low-Power SRAMs517
- 12.2.7Area, Delay, and Power of RAMs and Register Files520
- 12.3DRAM522
- 12.3.1Subarray Architectures523
- 12.3.2Column Circuitry525
- 12.3.3Embedded DRAM526
- 12.4Read-Only Memory527
- 12.4.1Programmable ROMs529
- 12.4.2NAND ROMs530
- 12.4.3Flash531
- 12.5Serial Access Memories533
- 12.5.1Shift Registers533
- 12.5.2Queues (FIFO, LIFO)533
- 12.6Content-Addressable Memory535
- 12.7Programmable Logic Arrays537
- 12.8Robust Memory Design541
- 12.8.1Redundancy541
- 12.8.2Error Correcting Codes (ECC)543
- 12.8.3Radiation Hardening543
- 12.9Historical Perspective544
13Special-Purpose Subsystems
- 13.1Introduction549
- 13.2Packaging and Cooling549
- 13.2.1Package Options549
- 13.2.2Chip-to-Package Connections551
- 13.2.3Package Parasitics552
- 13.2.4Heat Dissipation552
- 13.2.5Temperature Sensors553
- 13.3Power Distribution555
- 13.3.1On-Chip Power Distribution Network556
- 13.3.2IR Drops557
- 13.3.3L di/dt Noise558
- 13.3.4On-Chip Bypass Capacitance559
- 13.3.5Power Network Modeling560
- 13.3.6Power Supply Filtering564
- 13.3.7Charge Pumps564
- 13.3.8Substrate Noise565
- 13.3.9Energy Scavenging565
- 13.4Clocks566
- 13.4.1Definitions566
- 13.4.2Clock System Architecture568
- 13.4.3Global Clock Generation569
- 13.4.4Global Clock Distribution571
- 13.4.5Local Clock Gaters575
- 13.4.6Clock Skew Budgets577
- 13.4.7Adaptive Deskewing579
- 13.5PLLs and DLLs580
- 13.5.1PLLs580
- 13.5.2DLLs587
- 13.5.3Pitfalls589
- 13.6I/O590
- 13.6.1Basic I/O Pad Circuits591
- 13.6.2Electrostatic Discharge Protection593
- 13.6.3Example: MOSIS I/O Pads594
- 13.6.4Mixed-Voltage I/O596
- 13.7High-Speed Links597
- 13.7.1High-Speed I/O Channels597
- 13.7.2Channel Noise and Interference600
- 13.7.3High-Speed Transmitters and Receivers601
- 13.7.4Synchronous Data Transmission606
- 13.7.5Clock Recovery in Source-Synchronous Systems606
- 13.7.6Clock Recovery in Mesochronous Systems608
- 13.7.7Clock Recovery in Pleisochronous Systems610
- 13.8Random Circuits610
- 13.8.1True Random Number Generators610
- 13.8.2Chip Identification611
- 13.9Pitfalls and Fallacies612
14Design Methodology and Tools
- 14.1Introduction615
- 14.2Structured Design Strategies617
- 14.2.1A Software Radio—A System Example618
- 14.2.2Hierarchy620
- 14.2.3Regularity623
- 14.2.4Modularity625
- 14.2.5Locality626
- 14.2.6Summary627
- 14.3Design Methods627
- 14.3.1Microprocessor/DSP627
- 14.3.2Programmable Logic628
- 14.3.3Gate Array and Sea of Gates Design631
- 14.3.4Cell-Based Design632
- 14.3.5Full Custom Design634
- 14.3.6Platform-Based Design—System on a Chip635
- 14.3.7Summary636
- 14.4Design Flows636
- 14.4.1Behavioral Synthesis Design Flow (ASIC Design Flow)637
- 14.4.2Automated Layout Generation641
- 14.4.3Mixed-Signal or Custom-Design Flow645
- 14.5Design Economics646
- 14.5.1Non-Recurring Engineering Costs (NREs)647
- 14.5.2Recurring Costs649
- 14.5.3Fixed Costs650
- 14.5.4Schedule651
- 14.5.5Personpower653
- 14.5.6Project Management653
- 14.5.7Design Reuse654
- 14.6Data Sheets and Documentation655
- 14.6.1The Summary655
- 14.6.2Pinout655
- 14.6.3Description of Operation655
- 14.6.4DC Specifications655
- 14.6.5AC Specifications656
- 14.6.6Package Diagram656
- 14.6.7Principles of Operation Manual656
- 14.6.8User Manual656
- 14.7CMOS Physical Design Styles656
- 14.8Pitfalls and Fallacies657
15Testing, Debugging, and Verification
- 15.1Introduction659
- 15.1.1Logic Verification660
- 15.1.2Debugging662
- 15.1.3Manufacturing Tests664
- 15.2Testers, Test Fixtures, and Test Programs666
- 15.2.1Testers and Test Fixtures666
- 15.2.2Test Programs668
- 15.2.3Handlers669
- 15.3Logic Verification Principles670
- 15.3.1Test Vectors670
- 15.3.2Testbenches and Harnesses671
- 15.3.3Regression Testing671
- 15.3.4Version Control672
- 15.3.5Bug Tracking673
- 15.4Silicon Debug Principles673
- 15.5Manufacturing Test Principles676
- 15.5.1Fault Models677
- 15.5.2Observability679
- 15.5.3Controllability679
- 15.5.4Repeatability679
- 15.5.5Survivability679
- 15.5.6Fault Coverage680
- 15.5.7Automatic Test Pattern Generation (ATPG)680
- 15.5.8Delay Fault Testing680
- 15.6Design for Testability681
- 15.6.1Ad Hoc Testing681
- 15.6.2Scan Design682
- 15.6.3Built-In Self-Test (BIST)684
- 15.6.4IDDQ Testing687
- 15.6.5Design for Manufacturability687
- 15.7Boundary Scan688
- 15.8Testing in a University Environment689
- 15.9Pitfalls and Fallacies690
부록 AHardware Description Languages
- A.1Introduction699
- A.1.1Modules700
- A.1.2Simulation and Synthesis701
- A.2Combinational Logic702
- A.2.1Bitwise Operators702
- A.2.2Comments and White Space703
- A.2.3Reduction Operators703
- A.2.4Conditional Assignment704
- A.2.5Internal Variables706
- A.2.6Precedence and Other Operators708
- A.2.7Numbers708
- A.2.8Zs and Xs709
- A.2.9Bit Swizzling711
- A.2.10Delays712
- A.3Structural Modeling713
- A.4Sequential Logic717
- A.4.1Registers717
- A.4.2Resettable Registers718
- A.4.3Enabled Registers719
- A.4.4Multiple Registers720
- A.4.5Latches721
- A.4.6Counters722
- A.4.7Shift Registers724
- A.5Combinational Logic with Always / Process Statements724
- A.5.1Case Statements726
- A.5.2If Statements729
- A.5.3SystemVerilog Casez731
- A.5.4Blocking and Nonblocking Assignments731
- A.6Finite State Machines735
- A.6.1FSM Example735
- A.6.2State Enumeration736
- A.6.3FSM with Inputs738
- A.7Type Idiosyncracies740
- A.8Parameterized Modules742
- A.9Memory745
- A.9.1RAM745
- A.9.2Multiported Register Files747
- A.9.3ROM748
- A.10Testbenches749
- A.11SystemVerilog Netlists754
- A.12Example: MIPS Processor755
- A.12.1Testbench756
- A.12.2SystemVerilog757
- A.12.3VHDL766
21부에서 가장 넓게 쓰는 교재 — 21.8 지연 모델과 논리적 노력(4장) · 21.11 변동과 신뢰성(7장) · 21.12 회로 시뮬레이션(8장) · 21.14 칩 레벨 서브시스템(13장) · 21.15 회로 구현과 레이아웃(1.5·3.3·3.5) · 21.16 검증과 테스트(15장)를 맡는다. 4.4~4.5의 logical effort가 이 책의 간판이고, 1.5가 공정·레이아웃, 3장이 CMOS 공정, 12장이 SRAM·DRAM·플래시 회로다(15부와 겹친다). 절이 3단(x.y.z)까지 번호가 붙으므로 인용은 “Weste&Harris §4.4.1”처럼 3단까지 적는다. 장 끝 Summary·Exercises와 원본의 “WEB ENHANCED” 표시는 번호가 없어 싣지 않았다.
Computer Architecture: A Quantitative Approach
15·21·23부John L. Hennessy · David A. Patterson · 6th ed. · Morgan Kaufmann, 2017 · ISBN 978-0-12-811905-1 원본 대조
1Fundamentals of Quantitative Design and Analysis
- 1.1Introduction2
- 1.2Classes of Computers6
- 1.3Defining Computer Architecture11
- 1.4Trends in Technology18
- 1.5Trends in Power and Energy in Integrated Circuits23
- 1.6Trends in Cost29
- 1.7Dependability36
- 1.8Measuring, Reporting, and Summarizing Performance39
- 1.9Quantitative Principles of Computer Design48
- 1.10Putting It All Together: Performance, Price, and Power55
- 1.11Fallacies and Pitfalls58
- 1.12Concluding Remarks64
- 1.13Historical Perspectives and References67
2Memory Hierarchy Design
- 2.1Introduction78
- 2.2Memory Technology and Optimizations84
- 2.3Ten Advanced Optimizations of Cache Performance94
- 2.4Virtual Memory and Virtual Machines118
- 2.5Cross-Cutting Issues: The Design of Memory Hierarchies126
- 2.6Putting It All Together: Memory Hierarchies in the ARM Cortex-A53 and Intel Core i7 6700129
- 2.7Fallacies and Pitfalls142
- 2.8Concluding Remarks: Looking Ahead146
- 2.9Historical Perspectives and References148
3Instruction-Level Parallelism and Its Exploitation
- 3.1Instruction-Level Parallelism: Concepts and Challenges168
- 3.2Basic Compiler Techniques for Exposing ILP176
- 3.3Reducing Branch Costs With Advanced Branch Prediction182
- 3.4Overcoming Data Hazards With Dynamic Scheduling191
- 3.5Dynamic Scheduling: Examples and the Algorithm201
- 3.6Hardware-Based Speculation208
- 3.7Exploiting ILP Using Multiple Issue and Static Scheduling218
- 3.8Exploiting ILP Using Dynamic Scheduling, Multiple Issue, and Speculation222
- 3.9Advanced Techniques for Instruction Delivery and Speculation228
- 3.10Cross-Cutting Issues240
- 3.11Multithreading: Exploiting Thread-Level Parallelism to Improve Uniprocessor Throughput242
- 3.12Putting It All Together: The Intel Core i7 6700 and ARM Cortex-A53247
- 3.13Fallacies and Pitfalls258
- 3.14Concluding Remarks: What's Ahead?264
- 3.15Historical Perspective and References266
4Data-Level Parallelism in Vector, SIMD, and GPU Architectures
- 4.1Introduction282
- 4.2Vector Architecture283
- 4.3SIMD Instruction Set Extensions for Multimedia304
- 4.4Graphics Processing Units310
- 4.5Detecting and Enhancing Loop-Level Parallelism336
- 4.6Cross-Cutting Issues345
- 4.7Putting It All Together: Embedded Versus Server GPUs and Tesla Versus Core i7346
- 4.8Fallacies and Pitfalls353
- 4.9Concluding Remarks357
- 4.10Historical Perspective and References357
5Thread-Level Parallelism
- 5.1Introduction368
- 5.2Centralized Shared-Memory Architectures377
- 5.3Performance of Symmetric Shared-Memory Multiprocessors393
- 5.4Distributed Shared-Memory and Directory-Based Coherence404
- 5.5Synchronization: The Basics412
- 5.6Models of Memory Consistency: An Introduction417
- 5.7Cross-Cutting Issues422
- 5.8Putting It All Together: Multicore Processors and Their Performance426
- 5.9Fallacies and Pitfalls438
- 5.10The Future of Multicore Scaling442
- 5.11Concluding Remarks444
- 5.12Historical Perspectives and References445
6Warehouse-Scale Computers to Exploit Request-Level and Data-Level Parallelism
- 6.1Introduction466
- 6.2Programming Models and Workloads for Warehouse-Scale Computers471
- 6.3Computer Architecture of Warehouse-Scale Computers477
- 6.4The Efficiency and Cost of Warehouse-Scale Computers482
- 6.5Cloud Computing: The Return of Utility Computing490
- 6.6Cross-Cutting Issues501
- 6.7Putting It All Together: A Google Warehouse-Scale Computer503
- 6.8Fallacies and Pitfalls514
- 6.9Concluding Remarks518
- 6.10Historical Perspectives and References519
7Domain-Specific Architectures
- 7.1Introduction540
- 7.2Guidelines for DSAs543
- 7.3Example Domain: Deep Neural Networks544
- 7.4Google's Tensor Processing Unit, an Inference Data Center Accelerator557
- 7.5Microsoft Catapult, a Flexible Data Center Accelerator567
- 7.6Intel Crest, a Data Center Accelerator for Training579
- 7.7Pixel Visual Core, a Personal Mobile Device Image Processing Unit579
- 7.8Cross-Cutting Issues592
- 7.9Putting It All Together: CPUs Versus GPUs Versus DNN Accelerators595
- 7.10Fallacies and Pitfalls602
- 7.11Concluding Remarks604
- 7.12Historical Perspectives and References606
Appendices
부록 AInstruction Set Principles
- A.1Introduction
- A.2Classifying Instruction Set Architectures
- A.3Memory Addressing
- A.4Type and Size of Operands
- A.5Operations in the Instruction Set
- A.6Instructions for Control Flow
- A.7Encoding an Instruction Set
- A.8Cross-Cutting Issues: The Role of Compilers
- A.9Putting It All Together: The RISC-V Architecture
- A.10Fallacies and Pitfalls
- A.11Concluding Remarks
- A.12Historical Perspective and References
부록 BReview of Memory Hierarchy
- B.1Introduction
- B.2Cache Performance
- B.3Six Basic Cache Optimizations
- B.4Virtual Memory
- B.5Protection and Examples of Virtual Memory
- B.6Fallacies and Pitfalls
- B.7Concluding Remarks
- B.8Historical Perspective and References
부록 CPipelining: Basic and Intermediate Concepts
- C.1Introduction
- C.2The Major Hurdle of Pipelining—Pipeline Hazards
- C.3How Is Pipelining Implemented?
- C.4What Makes Pipelining Hard to Implement?
- C.5Extending the RISC V Integer Pipeline to Handle Multicycle Operations
- C.6Putting It All Together: The MIPS R4000 Pipeline
- C.7Cross-Cutting Issues
- C.8Fallacies and Pitfalls
- C.9Concluding Remarks
- C.10Historical Perspective and References
부록 DStorage Systems
부록 EEmbedded Systems
부록 FInterconnection Networks
부록 GVector Processors in More Depth
부록 HHardware and Software for VLIW and EPIC
부록 ILarge-Scale Multiprocessors and Scientific Applications
부록 JComputer Arithmetic
부록 KSurvey of Instruction Set Architectures
부록 LAdvanced Concepts on Address Translation
부록 MHistorical Perspectives and References
인쇄 목차를 절까지 옮겼다(7개 장 + 부록 A~M). 이 책의 목차에는 장 시작 쪽수가 없어 절 쪽수만 실었고, 부록 A~C는 쪽 번호가 A-2·B-15처럼 본문과 따로 매겨져 있어 쪽을 싣지 않았다. 부록 D~M은 온라인 부록이라 쪽이 없다(목차에는 장별 저자가 함께 실려 있으나 옮기지 않았다). 자간 흔적을 바로잡았다 — “Advance d/Performanc e/Impleme nted” 등이다. 15.13 메모리 중심 아키텍처(6절)가 서적 근거 없이 서 있던 자리를 받는다 — 2장이 메모리 계층과 대역폭 병목의 정면 근거이고, 7장 Domain-Specific Architectures가 TPU·Catapult·Pixel Visual Core를 절 단위로 다뤄 23.6 AI 반도체의 근거가 된다(7.3~7.4가 DNN과 TPU). 21.17의 파이프라이닝·프로세서 구조는 3장과 부록 C, 15.2의 캐시 계층은 2.1~2.2와 부록 B다. 6장(창고 규모 컴퓨터)은 데이터센터 전력·냉각(23.6)과 닿는다. 백과의 다른 교재가 모두 소자·회로에서 멈추는 데 비해 이 책만 시스템 쪽에서 내려온다.
22부 · 아날로그·혼성신호와 디지털 신호 처리
Fundamentals of Microelectronics
22부Razavi · 3rd ed. · Wiley, 2021 원본 대조
22부의 입문 축. 다이오드·BJT·MOSFET을 소자에서 증폭기로 잇는 순서가 12·13부의 소신호 모델이 끝나는 자리와 맞물린다. 3판은 CMOS 트랙이 뒤로 밀려 7장과 17장이 같은 제목(CMOS Amplifiers)으로 두 번 나온다 — 인용할 때 어느 쪽인지 반드시 밝힐 것. 부록 A의 쪽 번호가 A-1이라 17장의 끝쪽을 목차에서 유도할 수 없어, 17장 인용에는 쪽을 적지 않는다. 22.1~22.2의 기준이고, 15장(아날로그 필터)이 22.13의 앞머리를 맡는다.
Design of Analog CMOS Integrated Circuits
22부Razavi · 2nd ed. · McGraw-Hill, 2016 원본 대조
22부의 주축. 장 순서가 단일단 → 차동쌍 → 전류 미러 → 주파수 응답 → 잡음 → 되먹임 → 연산증폭기 → 안정성이고 22.2~22.9가 이 배열을 그대로 따른다. 되먹임(8장)과 안정성·보상(10장)을 따로 떼어 놓은 것이 이 책의 성격이다. 15·16장(발진기·PLL)은 21.14와, 17~19장(단채널·공정·레이아웃)은 14·18·21부와 겹쳐 22부에서는 쓰지 않는다.
Analysis and Design of Analog Integrated Circuits
22부Gray · Hurst · Lewis · Meyer · 6th ed. · Wiley, 2024 원본 대조
BJT를 CMOS와 대등하게 다루는 정통서. 되먹임(8장)과 그 안정성(9장)에 각각 70쪽 넘게 쓰고, 잡음(11장)의 유도가 가장 상세하다. 6판에서 완전차동 연산증폭기가 12장으로 독립했다. 장 끝마다 부록(A.n.n)·Problems·References가 붙어 있어 목차를 옮길 때 마지막 절의 쪽수와 섞이기 쉽다 — 전사할 때 걸러 냈다.
Analog Integrated Circuit Design
22부Johns · Martin · 2nd ed. · Wiley, 2012 원본 대조
스위치드 커패시터(14장)와 데이터 변환기(15~18장)를 교재 수준으로 다루는 거의 유일한 책. 22.12~22.17 여섯 장이 사실상 이 책에서 나온다 — 10·11장(비교기·표본화유지)은 22.12, 12장(연속시간 필터)은 22.13, 13장(이산시간 신호)은 22.14, 14장(SC)은 22.15, 15~18장(변환기)은 22.16~22.17. 7장(바이어스·기준·레귤레이터)은 22.11에 대응한다. 절마다 Key Points·References·Problems가 번호를 달고 붙어 있어 절 수가 실제 내용보다 많아 보인다.
Discrete-Time Signal Processing
22부Oppenheim · Schafer · 3rd ed. · Pearson (Custom Library 판) 원본 대조
22.14~22.23의 주축. 4장(표본화)이 에일리어싱·재구성·표본화율 변환·오버샘플링을 한 장에 담아 22.16과 22.23의 뼈대가 되고, 6장(구조)이 계수 양자화·반올림 잡음·리밋 사이클을 다뤄 22.20의 근거가 된다. 확보한 것은 Pearson Custom Library 편집판이라 표준 3판과 쪽 번호가 다르고 13장(Cepstrum)이 빠져 12장까지다 — 인용은 이 판의 쪽을 따른다.
Digital Signal Processing
22부Proakis · Manolakis · 4th ed. (Pearson New International Edition) 원본 대조
Oppenheim의 대조본. 11장 다중률 신호 처리가 데시메이션·인터폴레이션·다상 분해·필터 뱅크를 독립된 장으로 다뤄 22.23의 기준이 되고, 9장(구현)이 수의 표현과 양자화를 회로 쪽에 가깝게 쓴다. 6장이 표본화와 A/D·D/A를 함께 놓아 22.16과 22.18을 잇는다.
VLSI Digital Signal Processing Systems: Design and Implementation
22부Parhi · Wiley, 1999 원본 대조
22.24~22.27의 기준. 반복 한계·리타이밍·언폴딩·폴딩·시스톨릭 배열처럼 DSP 알고리즘을 실리콘 구조로 옮기는 변환을 다루는 거의 유일한 교재다. 13~15장(비트 수준 산술·중복 산술·강도 축소)은 21.13 데이터패스와 맞물리고, 17장(저전력)은 21.9와 겹치므로 22부에서는 DSP 특유의 부분만 쓴다. 확보한 PDF는 폰트 인코딩이 깨져(숫자 9와 U·z·q·V가 누락) 텍스트 추출을 못 써서 목차 7쪽을 이미지로 읽어 옮겼다.
23부 · 반도체 산업
IRDS — International Roadmap for Devices and Systems
23부IEEE · 연간 개정 · 무료 공개 미확보
목차 미확보직접 확인해 채워 넣을 것
교재가 아니라 로드맵 문서. 23.2 기술 로드맵의 1차 자료이며 매년 갱신되므로 인용 시 연도 판을 반드시 명시한다.
각사 기술 발표 · 리서치 리포트
23부TSMC/삼성/SK하이닉스 기술 심포지엄, 시장 조사 자료 미확보
목차 미확보직접 확인해 채워 넣을 것
23부는 교재로 쓸 수 없는 파트다. 전부 /references/papers에서 출처와 연도를 붙여 관리한다.
운영 규칙
절 번호 체계가 책마다 다르다. Kittel은 절에 번호를 붙이지 않고 제목과 쪽수만 싣는다. Reif는 가운뎃점(1·1)으로 찍는다. Boas는 장 안에서 절 번호가 1부터 다시 시작한다. Atkins는 Focus–Topic 체계다. 인용 형식을 파트별로 통일해 둘 것.
판을 고정한다. 판이 바뀌면 절 번호가 달라진다. Taur&Ning은 2판과 3판의 장 구성이 완전히 다르고, Sze는 3판과 4판의 절 구성이 다르며, Porter는 4판에서 6장이 전면 개편돼 3판 절 번호를 그대로 쓰면 어긋나며, Campbell은 3판과 4판 사이에 절이 추가됐다(그래서 원본을 확보한 3판으로 인용 판을 고정했다). 본문에서 인용할 때는 반드시 판을 함께 적는다.
목차가 없으면 지시도 없다. 집필 파이프라인 3단계(“Taur&Ning §5.1.2 Charge Sheet Model 기준”)는 이 페이지가 채워져 있어야 성립한다. 서적 52권 가운데 47권이 원본 대조를 마쳤다 — 22개 파트 전부 지금 지시를 내릴 수 있다. 남은 두 권은 원본 목차 자체를 구하지 못한 경우다. Hu는 인쇄 목차가 없어 절 목록만 따로 대조했고, Rabaey는 확보한 원본 목차에 쪽수가 없다. 둘 다 구해 오는 대로 교체한다.
교재로 안 되는 파트가 있다. 15부(메모리 제품 기술)와 23부(산업)는 교재보다 학회 자료와 로드맵이 앞선다. 이쪽은 /references/papers에서 출처와 연도를 붙여 관리한다. 이 페이지에 미확보로 남은 세 항목(IRDS · IEDM/ISSCC/VLSI 자료 · 각사 기술 발표)이 바로 그것이라, 목차를 채워 넣을 대상이 아니다.
저작권. 이 페이지는 서지 정보와 목차만 담는다. 목차는 사실의 나열이라 문제되지 않지만, 본문·도표·그림을 그대로 옮기지 않는다. 백과 본문은 개념을 본인 언어로 재구성하고 그림은 직접 작도하거나 출처가 명확한 것을 인용한다.